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    NAND TTL Search Results

    NAND TTL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SNJ54H10W Rochester Electronics LLC NAND Gate, TTL, CDFP14 Visit Rochester Electronics LLC Buy
    MC2105F Rochester Electronics LLC MC2105 - NAND Gate, TTL, CDFP14 Visit Rochester Electronics LLC Buy
    9003FM/R Rochester Electronics LLC 9003 - NAND Gate, TTL Visit Rochester Electronics LLC Buy
    MC512F Rochester Electronics LLC MC512 - NAND Gate, TTL, CDFP14 Visit Rochester Electronics LLC Buy
    9003PC Rochester Electronics LLC 9003 - NAND Gate, TTL Visit Rochester Electronics LLC Buy

    NAND TTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mc14569

    Abstract: mc14094b MC14024B MC14555B
    Text: CMOS Selection Guide by Function Device NAND Gates MC14011B MC14011UB MC14093B MC14023B Function Page Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20


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    PDF MC14011B MC14011UB MC14093B MC14023B MC14042B MC14043B MC14044B MC14076B MC14175B MC14013B mc14569 mc14094b MC14024B MC14555B

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


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    PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    751A-03

    Abstract: 74AC ACT132 MC74AC132 MC74ACT132 74ACT132
    Text: MC74AC132 MC74ACT132 Quad 2ĆInput NAND Schmitt Trigger QUAD 2-INPUT NAND SCHMITT TRIGGER The MC74AC/74ACT132 contains four 2-input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. In addition, they have greater noise margin than conventional NAND gates.


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    PDF MC74AC132 MC74ACT132 MC74AC/74ACT132 MC74AC132/D* MC74AC132/D 751A-03 74AC ACT132 MC74AC132 MC74ACT132 74ACT132

    MT29F2G08AAD

    Abstract: No abstract text available
    Text: Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features Figure 1: • Open NAND Flash Interface ONFI 1.0-compliant • Single-level cell (SLC) technology


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    PDF MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD 09005aef82784784 09005aef82784840 MT29F2G08AAD

    NAND512W3A2C

    Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


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    PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C Byte/264 TSOP48 VFBGA55 VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R4A2C NAND512W4A2C NAND512W3A2

    FBGA63

    Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


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    PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C byte/264 TSOP48 VFBGA55 VFBGA63 FBGA63 NAND512R4A2C NAND512W4A2C

    NAND512-A2C

    Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


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    PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63 NAND512-A2C NAND512A2C NAND512R4A2C NAND512W4A2C

    NAND04GW3C2A

    Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
    Text: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface


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    PDF NAND04GA3C2A NAND04GW3C2A TSOP48 NAND04GW3C2A NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory

    Untitled

    Abstract: No abstract text available
    Text: 54ACTQ10 54ACTQ10 Quiet Series Triple 3-Input NAND Gate Literature Number: SNOS582 54ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description The ’ACTQ10 contains three, 3-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output


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    PDF 54ACTQ10 54ACTQ10 SNOS582 ACTQ10

    Untitled

    Abstract: No abstract text available
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


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    PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63

    MM74C00

    Abstract: MM74C00N MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C02 MM74C04 MM74C10
    Text: MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C00 Quad 2-Input NAND Gate MM74C02 Quad 2-Input NOR Gate MM74C04 Hex Inverter MM74C10 Triple 3-Input NAND Gate MM74C20 Dual 4-Input NAND Gate General Description Features These logic gates employ complementary MOS CMOS to


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    PDF MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C00 MM74C02 MM74C04 MM74C10 MM74C20 MM74C00N MM54C00 MM54C02 MM54C04 MM54C10 MM54C20

    CD54HC10

    Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10E CD74HCT10 HC10 HCT10 CD74HC10
    Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10


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    PDF HCT10 CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 SCHS128C HCT10 CD54HC10 CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10E CD74HCT10 HC10 CD74HC10

    TTL 7440

    Abstract: 9N38 74H40 74S140 74S40 9H40 9N37 9N40 9S40 TTL 7437
    Text: 6006 74H40 9H 40/ 9N 37/ 7437 9N 38/ 7438 9N 40/ 7440 74S40 9S 40/ 74S140 96101 Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Any TTL Any TTL Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Dual 2-NAND Driver Any TTL 96 106 Any TTL Dual 2-NAND Driver 50 0 Driver


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    PDF 74H40 O-86A 74S40 74S140 TTL 7440 9N38 9H40 9N37 9N40 9S40 TTL 7437

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


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    PDF EDI784MSV-RP EDI784MSV50SI EDI784MSV-RP ECOU8274

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: smd transistor 2y lead side brazed hermetic UHD508 "Direct Replacement" 2Y SMD SG508 SG508H SMD 3B direct replacement
    Text: SG508 SILICON GENERAL QUAD-NAND DRIVER LINEAR IN TEG R ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate


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    PDF SG508 SG508 500mA UHD508 14-PIN SG508H/883B 125-C SG508H DC 5V to DC 100V CIRCUIT DIAGRAM smd transistor 2y lead side brazed hermetic "Direct Replacement" 2Y SMD SMD 3B direct replacement

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


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    PDF EDI784MSV-RP EDI784MSV 528-byte I784M

    Untitled

    Abstract: No abstract text available
    Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high


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    PDF EDI784MSV-RP 250ms minV50SI

    km29v040t

    Abstract: yd 4145 km29v040 V040T
    Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective


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    PDF KM29V040T 512Kx8 500us 400mil/0 KM29V040T 512Kx8bit KM29V040 yd 4145 V040T

    Untitled

    Abstract: No abstract text available
    Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program


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    PDF KM29N040T 512Kx8Bit KM29N040T 32-byte 500us 120ns/byte. KM29N040

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND


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    PDF KM29V64000TS/RS KM29V64000TS/RS 528-byte 200ns KM29V64000 7Sb4142 00E442b -TSOP2-400F -TSQP2-400R

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


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    PDF KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective


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    PDF KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte.

    Untitled

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY KM29V64000TS/RS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND


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    PDF KM29V64000TS/RS 200us KM29V64000

    Untitled

    Abstract: No abstract text available
    Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program


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    PDF KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040