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    NAT 3 TRANSISTOR Search Results

    NAT 3 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NAT 3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    speedtech p65

    Abstract: foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 1/16W SMT0603 1000pF SMT0603 200mils BCM5705M NO266 speedtech p65 foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401

    atmel 524 93c46

    Abstract: ag20 taiyo st c632 Zener diode ST DIODE u12 c644 d28 diode DDR2 layout guidelines C155T TI4510 zener diode c531 915GM
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF FAN5234 1/16W 300mil 12mil NO266 PN800 VT8235CE) atmel 524 93c46 ag20 taiyo st c632 Zener diode ST DIODE u12 c644 d28 diode DDR2 layout guidelines C155T TI4510 zener diode c531 915GM

    pin configuration NPN transistor c828

    Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 875ule. 1000pF 200mils BCM5705M NO266 pin configuration NPN transistor c828 w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode

    ZENER D30

    Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 875C38 1/16W 1000pF 200mils BCM5705M NO266 ZENER D30 aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458

    MR030

    Abstract: h48 diode zener MR030 ver 0.6 zener diode H48 UniOhm chip resistor FW3227 smd transistor h24 MOTHERBOARD schematic C529 DIODE DIODE SMD AE22
    Text: 5 4 3 2 1 First International Computer,Inc Portable Computer Group HW Department D Board name : MotherBoard Schematic 1. Schematic Page Description : Project : MR030 2. PCI & IRQ & DMA Description : Version : 0.6 3. Block Diagram : D C C 4. Nat name Description :


    Original     		PDF MR030 MR040T GM965 MR030 h48 diode zener MR030 ver 0.6 zener diode H48 UniOhm chip resistor FW3227 smd transistor h24 MOTHERBOARD schematic C529 DIODE DIODE SMD AE22

    panasonic encoder MFE

    Abstract: ps3 schematic 935 b10 45g 939 b10 45g transistor C732 PN800 c828 npn transistor l46f pin configuration NPN transistor c945 NPN Diode CK 99A
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :


    Original     		PDF NO266 100MHz FBM-11-201209-601A20T 80mil CC40R1E106K-TSM 680pF SMT0603 PN800 VT8235CE) panasonic encoder MFE ps3 schematic 935 b10 45g 939 b10 45g transistor C732 PN800 c828 npn transistor l46f pin configuration NPN transistor c945 NPN Diode CK 99A

    ps3 schematic

    Abstract: VT8235CE DO-214C smd transistor A7p c945 TRANSISTOR equivalent PN800 VT1631 hcl l21 usb power supply circuit diagram ENE CP2211 foxconn
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :


    Original     		PDF NO266 TAIWA416 100MHz FBM-11-201209-601A20T 80mil 680pF SMT0603 CC40R1E106K-TSM PN800 ps3 schematic VT8235CE DO-214C smd transistor A7p c945 TRANSISTOR equivalent PN800 VT1631 hcl l21 usb power supply circuit diagram ENE CP2211 foxconn

    top mark smd A12 5PIN

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4
    Text: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : DPUA 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Nat name Description :


    Original     		PDF NO266 RS300M SB200) 1/16W top mark smd A12 5PIN TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4

    via vn800

    Abstract: EQUIVALENT transistor 18751 DIODE SMD AE22 LM13W VT8237R layout audio power sb 18751 LM7W transistor a015 SMD SK 18751 smd LDO SOT-25
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : LM13W+ 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : D C 4. Nat name Description :


    Original     		PDF LM13W+ LM13WDPHONE VN800 VT8237R+ via vn800 EQUIVALENT transistor 18751 DIODE SMD AE22 LM13W VT8237R layout audio power sb 18751 LM7W transistor a015 SMD SK 18751 smd LDO SOT-25

    ps4 schematic

    Abstract: 820 B10 45g D5036 c945 TRANSISTOR equivalent D74 DIODE zener diode c531 c337 transistor nec equivalent smd transistor A7p vt1631 vt8235
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS4 2. PCI & IRQ & DMA Description : Version : 0.6 3. Block Diagram : D C 4. Nat name Description :


    Original     		PDF NO266 100MHz 1-201209-601A20T 80mil C40R1E106K-TSM 680pF SMT0603 PN800 VT8235CE) ps4 schematic 820 B10 45g D5036 c945 TRANSISTOR equivalent D74 DIODE zener diode c531 c337 transistor nec equivalent smd transistor A7p vt1631 vt8235

    Untitled

    Abstract: No abstract text available
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K AN-994.

    TRANSISTOR marking ar code

    Abstract: AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K O-220AB TRANSISTOR marking ar code AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    AN-994

    Abstract: C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K Collector-to-Em-10 AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    irgb60

    Abstract: No abstract text available
    Text: PD - 95644 IRGB6B60KPbF IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB6B60KPbF IRGS6B60K IRGSL6B60K O-220AB IRGS6B60K O-262 irgb60

    IRGBC40

    Abstract: No abstract text available
    Text: INTER NAT IONAL RECTIFIER SbE D • HfiSSMSS QDIQbOT 0 ■ Data Sheet No. PD-9.627A T -3 °l -03 International INSULATED GATE BIPOLAR TRANSISTOR S ^ lR G C t if te r IRGBC40 6QOV, 4QA FEATURES 600V, 40A, TO-220AB IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF IRGBC40 O-220AB SS452 46S5452 0010bl4 IRGBC40

    LMD1820

    Abstract: lmd 8201
    Text: tß LMD18201 April 1998 Nat i onal Semiconductor L M D 1 8201 3 A , 5 5 V H - B r i d g e 3A, 55V • TT L and CM OS com patible inputs General D e s cr i p t i o n ■ No "shoot-through” current ■ Therm al w arning tlag output at 145aC ■ Therm al shutdow n outputs off at 170°C


    OCR Scan     		PDF LMD18201 D18200 LMD1820 lmd 8201

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BUK655-500B

    Abstract: T0220AB
    Text: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK655-500B T0220AB dSiV-100/ /C-156

    J441

    Abstract: mosfet J442 IRFJ441 IRFJ442 IRFJ440 IRFJ443 MOSFET "CURRENT source" g581 9409A
    Text: HE D I 4Ô55455 □ 0Gcife»04 7 I • ■ Data Sheet No. PD-9.409A INTERNATIONAL R E C T I F I E R T IN T E R N A T I O N A L RECITI FIE R HEXFET TRANSISTORS !I«R IRFJ440 IRFJ441 N-CHANNEL POWER MOSFETs IRFJ442 IRFJ443 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF T-39-11 IRFJ440 IRFJ441 IRFJ442 param12 G-585 IRFJ440, IRFJ441. IRFJ442, IRFJ443 J441 mosfet J442 IRFJ441 IRFJ442 IRFJ440 MOSFET "CURRENT source" g581 9409A

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    transistor buz 10

    Abstract: BUZ10 transistor Siemens 14 S S 92
    Text: SIEMENS BUZ 10 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 10 Vbs 50 V b 23 A ^DS on 0.07 a Package Ordering Code TO-220 AB C67078-S1300-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1300-A2 transistor buz 10 BUZ10 transistor Siemens 14 S S 92

    BUK436-800A

    Abstract: BUK436-800B
    Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-800A/B BUK436 -800A -800B BUK436-800A BUK436-800B

    diode RP 6040

    Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors
    Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-800A/B BUK436 -800A -800B 7110A2fci diode RP 6040 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors