NC 93 TRANSISTOR Search Results

NC 93 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723

NC 93 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A3957SLB Abstract: G42-88 gp0642 Text: D a ta Sh e e t 2 93 1 9. 4 4 B 3957 FULL-BRIDGE PWM MICROSTEPPING MOTOR DRIVER NO CONNECT 1 PFD 2 REF 3 NO CONNECT 4 RC 5 GROUND 6 GROUND 24 NO CONNECT 23 LOAD SUPPLY 22 OUTB 21 NO CONNECT 20 D0 19 GROUND 7 18 GROUND D3 8 17 SENSE LOGIC SUPPLY 9 NC NC VBB	Original	PP-056-4 A3957SLB Inte41 MA-008-25 MA-008-25A G42-88 gp0642	PDF
2SB1588 Abstract: No abstract text available Text: i, L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1588 Silicon PNP Darlington Power Transistor ("^011)93 •VWH yr DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE	Original	2SB1588 2SD2439 -160V 2SB1588	PDF
MAX362CPE Abstract: MAX361 MAX361CPE MAX361CSE MAX361EJE MAX361EPE MAX361ESE MAX361MJE MAX362 Text: 19-0180; Rev 0; 9/93 Precision, Quad, SPST Analog Switches The MAX361/MAX362 are precision, quad, single-pole single-throw SPST analog switches. The MAX361 has four normally closed (NC) switches, and the MAX362 has four normally open (NO) switches. Both parts offer low channel	Original	MAX361/MAX362 MAX361 MAX362 500pA 250ns 170ns) MAX362CPE MAX361CPE MAX361CSE MAX361EJE MAX361EPE MAX361ESE MAX361MJE	PDF
9R340C Abstract: d92 02 D92 - 02 d92 02 diode 9r34 Text: IPW90R340C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J = 25°C 900 V R DS on ,max @ T J=25°C 0.34 Ω 93 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW90R340C3 PG-TO247 9R340C 9R340C d92 02 D92 - 02 d92 02 diode 9r34	PDF
d92 02 Abstract: d92 02 diode 9r340 Text: IPP90R340C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 0.34 Ω 93 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPP90R340C3 PG-TO220 9R340C d92 02 d92 02 diode 9r340	PDF
Untitled Abstract: No abstract text available Text: 19-0201; Rev 0; 11/93 it K tion lua able a v E il Ava 1 2 V /1 5 V or Adjust a ble , H igh-Effic ie nc y, Low I Q , Step-Up DC-DC Converters _Applica t ions Flash Memory Programming PCMCIA Cards Battery-Powered Applications High-Efficiency DC-DC Converters	Original	2V/150mA MAX761) MAX762) 300kHz 607mm) 030mm)	PDF
wiring diagram to hold contactor with NO, NC Abstract: UA30CLD35NPTR UA30CLD sp 1235 UA18CLD20PPTR UA18CLD05NPM1TR UA18CLD05NPTR UA18CL UA18CLD05PPTR UA18CLD08NPM1TR Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable	Original		PDF
UA30CLD35NPTR Abstract: No abstract text available Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable	Original		PDF
eyae Abstract: MSS1506 strobe trigger automatic Audio switch circuit diagram piezo element buzzer Text: MOSEL VITELIC MOSEL MSS1506 VOICE ROM DECEMBER Features Single power can operate at 2.4 V through 6V. Current output could drive 8 ohm speaker with a transistor, Vout could drive buzzer directly. The voice content is stored up to 15 seconds and can be separated to 64 sections.	Original	MSS1506 PID216C PID206C eyae MSS1506 strobe trigger automatic Audio switch circuit diagram piezo element buzzer	PDF
Transistor BFT 93 Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93 Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package	Original	OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93	PDF
73128 Abstract: 100-PIN GVT73128A24 GVT73128S24 marking wc 8N Text: GALVANTECH, INC. GVT73128A24/GVT73128S24 128K X 24 ASYNCHRONOUS SRAM ASYNCHRONOUS SRAM 128K x 24 SRAM +3.3V SUPPLY, THREE MEGABIT THREE CHIP ENABLES FEATURES GENERAL DESCRIPTION • • • • • • • The GVT73128A24 and GVT73128S24 are organized as a 131,072 x 24 SRAM using a four-transistor memory cell	Original	GVT73128A24/GVT73128S24 GVT73128A24 GVT73128S24 73128A24 73128S24 73128 100-PIN marking wc 8N	PDF
BSS306N Abstract: No abstract text available Text: Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101	Original	BSS306N PG-SOT23 IEC61249-2-21 H6327: BSS306N	PDF
Untitled Abstract: No abstract text available Text: BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 93 600 V 3.6 A 2.5 Ω TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current	Original	O-220 C67078-S1343-A2	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit	PDF

Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit	PDF
M15958 Abstract: MARKING C75 Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit M15958 MARKING C75	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.	Original	PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit	PDF
ULN2046A-1 Abstract: transistor array A9034 ULN2031A Text: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC =13 D • G5 0 4 3 3 Ô S E M I C O N D S / ICS 000301b M ■ ALGR 93 D 038 16 & * 7 ^ 3 - 2 5 ' ULN-2046A-1 TRANSISTOR ARRAY ULN-2046A-1 TRANSISTOR ARRAY T T Y P E ULN-2046A-1 general-purpose transistor	OCR Scan	000301b ULN-2046A-1 ULN-2046A. ULN-2031A ULN-2086A, ULS-2045H ULS-2083H, ULN2046A-1 transistor array A9034 ULN2031A	PDF
transistor a1023 Abstract: ULN2083A transistor D 667 C S2083 transistor D 667 S2083H Text: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC T3 0504330 D S E M I C O N D S / ICS 0003022 T • ALGR 93 D 03 8 2 2 ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS Five Independent NPN Transistors ■ p \E S IG N E D for use in general purpose, medium	OCR Scan	ULN-2083A ULS-2083H -2083A S2083H transistor a1023 ULN2083A transistor D 667 C S2083 transistor D 667	PDF
NDS9936 Abstract: No abstract text available Text: February 1996 N NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDS9936 an10s NDS9936 0D33347	PDF
BUZ93 Abstract: S1343A BUZ92 Text: SIEMENS SIPMOS Power Transistors BUZ 92 BUZ 93 N channel Enhancem ent mode Avalanche-rated Type ^DS ¡D R o S on Package 1> O rdering Code BUZ 92 600 V 3.3 A 3.0 Q TO -220 AB C 67078-S1343-A2 BUZ 93 600 V 3.6 A 2.5 n TO -220 AB C67078-S1346-A2 Maxim um Ratings	OCR Scan	67078-S1343-A2 C67078-S1346-A2 BUZ93 S1343A BUZ92	PDF
K1793 Abstract: 2SK1793-Z 2SK1793 2SK17 MP-25 MP-25Z 1793 1793-Z 2SK1793Z diode p25 Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2 S K 1 7 9 3 , 1 7 9 3 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1793 is N-channel MOS Field Effect Transistor de PACKAGE DIMENSIONS in m illim eters signed for high voltage switching applications.	OCR Scan	2SK1793, 2SK1793-Z 2SK1793 2SK1793 IEI-1209) K1793 2SK1793-Z 2SK17 MP-25 MP-25Z 1793 1793-Z 2SK1793Z diode p25	PDF

NC 93 TRANSISTOR Search Results

NC 93 TRANSISTOR Result Highlights (5)

NC 93 TRANSISTOR Datasheets Context Search

A3957SLB

2SB1588

MAX362CPE

9R340C

d92 02

Untitled

wiring diagram to hold contactor with NO, NC

UA30CLD35NPTR

eyae

Transistor BFT 93

73128

BSS306N

Untitled

Untitled

Untitled

Untitled

M15958

Untitled

Untitled

ULN2046A-1

transistor a1023

NDS9936

BUZ93

K1793