NDH8507N
Abstract: No abstract text available
Text: N September 1996 ADVANCE INFORMATION NDH8507N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
|
Original
|
PDF
|
NDH8507N
156oC/W
0025in2
NDH8507N
|
NDH8507N
Abstract: No abstract text available
Text: & National S e m i c o n d u c t o r T" S eptem ber 1 996 A D V A N C E IN F O R M A T IO N NDH8507N Dual N -C h a n n el E n h a n c e m e n t M o d e Field Effect T ra n s is to r G e n era l D es crip tio n F eatu res SuperSO T -8 N -C hannel e n h a n ce m e n t
|
OCR Scan
|
PDF
|
NDH8507N
0025in2
300ps,
NDH8507N
|
Untitled
Abstract: No abstract text available
Text: National Semiconductor September 1996 ” A D VA N C E IN FO R M A TIO N NDH8507N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using
|
OCR Scan
|
PDF
|
NDH8507N
300ps,
NDH8507N
|
Untitled
Abstract: No abstract text available
Text: Na l i o n al s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8507N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using
|
OCR Scan
|
PDF
|
8507N
0025in_
300ps,
|
