NDH8508P
Abstract: No abstract text available
Text: N September 1996 ADVANCE INFORMATION NDH8508P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH8508P
156oC/W
NDH8508P
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Untitled
Abstract: No abstract text available
Text: National Semiconductor September 1996 ADVANCE INFORMATION NDH8508P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH8508P
NDH8508P
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Untitled
Abstract: No abstract text available
Text: t? National September 1996 Semiconductor" ADVANCE INFORMATION N D H 8508P Dual P-Channel Enhancement M ode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancem ent mode power field effect transistors are produced using National's
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8508P
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H8508
Abstract: No abstract text available
Text: Na l i o n a l s emi con d u i- t o r S e ptem be r 1 996 ADVANCE INFORMATION ND H8508P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperS0T™ -8 P-Channel enhancem ent mode power field effect transistors are produced using National's
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H8508P
H8508
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