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NDP705B Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDP705B		National Semiconductor	TO-220AB DMOS Power MOSFETS		Scan	PDF
NDP705B		National Semiconductor	N-Channel Enhancement Mode Power FET		Scan	PDF
NDP705BE		National Semiconductor	TO-220AB DMOS Power MOSFETS		Scan	PDF
NDP705BEL		National Semiconductor	TO-220AB Logic Level DMOS Power MOSFETS		Scan	PDF
NDP705BL		National Semiconductor	TO-220AB Logic Level DMOS Power MOSFETS		Scan	PDF

NDP705B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NDP706B Abstract: NDP706A NDP705B NDP705A C1995 Text: NDP705A NDP705B NDP706A NDP706B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary high cell density DMOS technology This very high density process has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulses in the avalanche and commutation	Original	PDF	NDP705A NDP705B NDP706A NDP706B NDP706B C1995
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
NDP705A Abstract: NDP706A NDP705B NDP706B Text: fV t^ h d r 1QQ1 Semiconductor National NDP705A/NDP705B, NDP706A/NDP706B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high	OCR Scan	PDF	NDP705A/NDP705B, NDP706A/NDP706B 272-9S59 h501130 NDP705A NDP706A NDP705B NDP706B
NDP406BL Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5	OCR Scan	PDF	O-220AB NDP710AEL NDP710AL NDP710BEL NDP710BL NDP610AEL NDP610AL NDP610BEL NDP610BL NDP510AEL NDP406BL NDP508AEL MTP3055EL ndp706al NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
NDP505A Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80	OCR Scan	PDF	O-220AB NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP610B NDP610BE NDP510A NDP505A NDP705AE NDP605A NDP405B NDP510AE NDP510B
NDP406BL Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505 Text: «NSCS Power MOSFETS continued N Channel r D S (o n \| I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )	OCR Scan	PDF	O-220AB NDP710AEL DP710AL NDP710BEL NDP710BL NDP610AEL DP610AL NDP610BEL P610BL NDP510AEL NDP406BL DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610B DP505