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    NDS061 Price and Stock

    onsemi NDS0610

    MOSFET P-CH 60V 120MA SOT-23
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    DigiKey NDS0610 Digi-Reel 46,287 1
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    NDS0610 Cut Tape 46,287 1
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    NDS0610 Reel 45,000 3,000
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    Arrow Electronics NDS0610 459,000 17 Weeks 3,000
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    NDS0610 14,862 17 Weeks 1
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    NDS0610 12,000 1
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    NDS0610 2,215 20
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    Quest Components NDS0610 4,172
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    NDS0610 276
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    Rochester Electronics NDS0610 15,000 1
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    TME NDS0610 2,797 1
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    onsemi NDS0610-G

    FET -60V 10.0 MOHM SOT23
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    DigiKey NDS0610-G Digi-Reel 4,660 1
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    onsemi NDS0610-PG

    MOSFET P-CH 60V SOT-23
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    onsemi NDS0610_NL

    MOSFET P-CH 60V 120MA SOT23-3
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    Aptina Imaging NDS0610

    Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R
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    Verical NDS0610 459,000 3,000
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    NDS0610 12,000 154
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    NDS0610 2,786 74
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    Find more NDS061 price and stock on Findchips.com

    NDS061 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS0610 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS0610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS0610 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS0610_NL Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS061 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISS 98

    Abstract: No abstract text available
    Text: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features -0.18 and -0.12A, -60V. RDS ON = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF NDF0610 NDS0610 180mA ISS 98

    NDS0610

    Abstract: NDF0610
    Text: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features -0.18 and -0.12A, -60V. RDS ON = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF NDF0610 NDS0610 180mA NDS0610

    NDS0610

    Abstract: No abstract text available
    Text: NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable


    Original     		PDF NDS0610 120mA NDS0610

    Untitled

    Abstract: No abstract text available
    Text: NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable


    Original     		PDF NDS0610 120mA

    NDS0610

    Abstract: NDF0610
    Text: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features -0.18 and -0.12A, -60V. RDS ON = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDF0610 NDS0610 180mA NDF0610 OT-23) NDS0610

    NDF0610

    Abstract: NDS0610
    Text: N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been designed


    Original     		PDF NDF0610 NDS0610 NDF0610 OT-23) NDS0610

    CBVK741B019

    Abstract: F63TNR NDF0610 NDS0610 PN2222N
    Text: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features -0.18 and -0.12A, -60V. RDS ON = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF NDF0610 NDS0610 180mA CBVK741B019 F63TNR NDS0610 PN2222N

    siemens transistor t2

    Abstract: NDS0610 NDF0610
    Text: N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original     		PDF NDF0610 NDS0610 180mA NDF0610 OT-23) NDS0610 siemens transistor t2

    ba 3917

    Abstract: potentiometer 10 k AD5170BRMZ2.5
    Text: 256-Position, Two-Time Programmable, I2C Digital Potentiometer AD5170 256-position digital potentiometer Two-time programmable TTP set-and-forget resistance setting allows second-chance permanent programming Unlimited adjustments prior to one-time programming


    Original     		PDF 256-Position, AD5170 256-position 10-Lead AD5170 D04104-0-1/08 ba 3917 potentiometer 10 k AD5170BRMZ2.5

    ad5173brmz10-rl72

    Abstract: AD5173BRMZ10-RL7 rdac
    Text: 256-Position, One-Time Programmable, Dual-Channel, I2C Digital Potentiometers AD5172/AD5173 FEATURES FUNCTIONAL BLOCK DIAGRAMS W1 A1 2-channel, 256-position potentiometers One-time programmable OTP set-and-forget resistance setting provides a low cost alternative to EEMEM


    Original     		PDF 256-Position, AD5172/AD5173 256-position 10-lead AD5173) AD5172/AD5173 D04103-0-1/08 ad5173brmz10-rl72 AD5173BRMZ10-RL7 rdac

    U665B

    Abstract: SCD1U10V2KX-5GP aol14 H5PS5162 0R2J-2-GP ICS9LPRS365YGLFT-GP TPS51125 WPC775L RTM875T-606 si7686
    Text: A C D Mobile CPU CLK GEN. PCB STACKUP 667/800/1066MHz@1.05V 800/667MHz Cantiga AGTL+ CPU I/F 12,13 LVDS DDR Memory I/F PCI-EG INPUTS 71.CNTIG.00U 12,13 X4 DMI 400MHz 4 36 OUTPUTS DCBATOUT 1D8V_S3 10A RT9026 35 DDR_VREF_S0 (1.5A) S 1D8V_S3 GND DDR_VREF_S3


    Original     		PDF D45/D46 ICS9LPRS365YGLFT-GP 4J001 001--D45 4K001 001--D46 TPS51125 G7921 TPS51124 RTM875T-606-VD-GRT U665B SCD1U10V2KX-5GP aol14 H5PS5162 0R2J-2-GP ICS9LPRS365YGLFT-GP TPS51125 WPC775L RTM875T-606 si7686

    G545B1

    Abstract: MAX8776 KBC1070-NU PDTA124EU-1-GP 74LVC1G08GW-1-GP 1SS355PT-GP SC470P50V2KX-3GP G546A1 kbc1070 isl6260
    Text: 5 4 3 2 1 D D Wistron Confidential PV C 2007/03/30 C REV :PV-04 B B <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Document Number Date: Friday, March 30, 2007 5 4 3 2 NORN Rev


    Original     		PDF PV-04 MAX8776 TPS51120 ICS9LPRS355AKLFT 4R801 TPS51124 49Q01 SPRING-38-GP SPRING-18-U G545B1 MAX8776 KBC1070-NU PDTA124EU-1-GP 74LVC1G08GW-1-GP 1SS355PT-GP SC470P50V2KX-3GP G546A1 kbc1070 isl6260

    V3V REV-1.1

    Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
    Text: A B C D E A8J/F SCHEMATIC R11 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU


    Original     		PDF LPC47N217 RTL8111B PCI--1394 R5C832 12VSUS JP6302 V3V REV-1.1 asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG

    QG82945PM

    Abstract: asus R7790 47n217 isl6227caz ISL6262CRZ rtl8111b d5702 C5022 R5538
    Text: A B C D E A8Jp/Jv/Je/Jn/Fm SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Merom CPU 1 Merom CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.


    Original     		PDF LPC47N217 RTL8111B PCI--1394 R5C832 12VSUS 12VSUS JP6302 QG82945PM asus R7790 47n217 isl6227caz ISL6262CRZ d5702 C5022 R5538

    winbond WPCE773

    Abstract: g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143
    Text: 5 4 3 2 1 SYSTEM DC/DC 42 ISL62392 INPUTS JV71- M V 5V_S5 6A Block Diagram 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 Project code: 91.4FX01.001 PCB P/N : 48.4FX01.0SA REVISION : 09242 -1 D SMSC Mobile CPU CLK GEN. SYSTEM DC/DC INPUTS 1D5V_S3(12A) 34 DDR2


    Original     		PDF ISL62392 ICS9LPRS365B EMC2102 4FX01 TPS51124 RT9026 667/800/1066MHz 64MbX16X4 RT9018 winbond WPCE773 g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143

    BCM5784

    Abstract: JV50-TR RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL
    Text: 5 4 3 2 Project code: 91.4FN01.001 PCB P/N : 48.4FN01.001 REVISION : 09230- -1 JV50-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 35 IN OUT INPUTS HDMI LAN DY Codec A-Link 4X4 AZALIA


    Original     		PDF JV50-TR 4FN01 667/800MHz RT8205A 638-Pin uFCPGA638 TPS51124 16X16 BCM5784 RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL

    TPS51125

    Abstract: D0214 ENE3310 SRN10KJ-6-GP 88e8071 51125 KB3310 ich9 WINBOND W25X80 sp5 gfx
    Text: 5 4 3 2 1 Cathedral Peak Block Diagram CLK GEN. D SYSTEM DC/DC Mobile CPU ICS 9LPRS365BKLFT 71.09365.A03 RTM 875N-606-LFT (71.00875.003) 3 PCB STACKUP THERMAL EMC2102 Penryn 479 21 DDR2 DIMM1 667/800 MHz TOP 667/800/1067MHz@1.05V DCBATOUT 3D3V_S5 CRT S LCD


    Original     		PDF 4J501 TPS51125 9LPRS365BKLFT 875N-606-LFT EMC2102 667/800MHz 667/800/1067MHz TPS51124 TPS51125 D0214 ENE3310 SRN10KJ-6-GP 88e8071 51125 KB3310 ich9 WINBOND W25X80 sp5 gfx

    WPCE773LA0DG

    Abstract: G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.011 REVISION : 08266-1 SYSTEM DC/DC 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


    Original     		PDF ICS9LPRS365B 4CQ01 TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 RT9571 WPCE773LA0DG G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52

    asus

    Abstract: 47n217 R7790 C5706 c5701 R5314 ISL6262CRZ ICS954310BGLFT rtl8111b powerload
    Text: A B C D E A8J/F SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU


    Original     		PDF LPC47N217 RTL8111B PCI--1394 R5C832 12VSUS JP6302 asus 47n217 R7790 C5706 c5701 R5314 ISL6262CRZ ICS954310BGLFT powerload

    transistor wd sot-23

    Abstract: B5G1 NDF0610 NDS0610
    Text: É ^ J N ational Semiconductor" NDF0610 / . Pn NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m ode p ow er fie ld effect transistors are produced using National's p ro p rie ta ry, high cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDF0610 NDS0610 180mA bS0il30 NDF0610 OT-23) transistor wd sot-23 B5G1 NDS0610

    Untitled

    Abstract: No abstract text available
    Text: April 1 9 9 5 FAIRCHILD :m ic d n d u c t o r NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDF0610 NDS0610 180mA S0610 NDF0610 NDS0610 OT-23)

    nos0610

    Abstract: NDF0610 NDS0610
    Text: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDF0610 NDS0610 180mA OT-23 nos0610 NDS0610

    Untitled

    Abstract: No abstract text available
    Text: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDF0610 NDS0610 180mA OT-23) NDF0610 NDS061

    DFDH2012T900S

    Abstract: LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT
    Text: 1-fid e n tic i Iw in iie a u Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History ORIGINAL RELEASE A B 2006/01/12 Rev:B release. c 2006/03/17 R e v :C release. 2006/03/31 R e v :0 release. PCB STA C K U P LAY1 LAY2 LAY3 LAY4 LAY5


    OCR Scan     		PDF 16CLKG 1394/USB/M 26LED GND14 M66EN G402R GNT02 CN129S12421A0 0402R F11YT1 DFDH2012T900S LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT