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    NDS336 Price and Stock

    onsemi NDS336P

    MOSFET P-CH 20V 1.2A SUPERSOT3
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    DigiKey NDS336P Cut Tape 1
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    NDS336P Digi-Reel 1
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    NDS336P Reel 3,000
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    National Semiconductor Corporation NDS336P

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    Bristol Electronics NDS336P 8,403
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    Quest Components NDS336P 6,722
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    Fairchild Semiconductor Corporation NDS336P

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    Bristol Electronics NDS336P 4,740
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    Quest Components NDS336P 3,792
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    ComSIT USA NDS336P 2,825
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    Chip 1 Exchange NDS336P 7,975
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    NDS336P 5,000
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    Win Source Electronics NDS336P 30,800
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    NDS336 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS336 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS336P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS336P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original PDF
    NDS336P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS336P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS336P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS336P_D87Z Fairchild Semiconductor Transistor Mosfet P-CH 20V 1.2A 3 pin SOT-23 T/R Original PDF
    NDS336P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    NDS336 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS336P

    Abstract: No abstract text available
    Text: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


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    PDF NDS336P NDS336P

    NDS336P

    Abstract: No abstract text available
    Text: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,


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    PDF NDS336P NDS336P

    NDS336P

    Abstract: No abstract text available
    Text: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


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    PDF NDS336P NDS336P

    MAX1703

    Abstract: MAX1703ESE max170306 low noise block down converter p-channel mosfet transistor low power NDS336 10mmho
    Text: 19-1336; Rev 2; 11/98 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered


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    PDF MAX1703 MAX1703 MAX8865/MAX8866 MAX1703ESE max170306 low noise block down converter p-channel mosfet transistor low power NDS336 10mmho

    MAX1703

    Abstract: MAX1703ESE pwm CONTROLLER BLOCK DIAGRAM
    Text: 19-1336; Rev 0; 1/98 KIT ATION EVALU LE B A IL A AV 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features ♦ Up to 95% Efficiency ♦ Up to 1.5A Output ♦ Fixed 5V or Adjustable Step-Up Output (2.5V to 5.5V)


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    PDF MAX1700/MAX1701. MAX1705/MAX1706. MAX848/MAX849. 300kHz) 200kHz 400kHz) MAX1703 MAX1703 MAX1703ESE pwm CONTROLLER BLOCK DIAGRAM

    T61p

    Abstract: quanta computer quanta tm7 MAX1644 T22p GAD31 GAD10 MD57 Z014 T9238
    Text: 8 7 6 5 4 3 2 1 D D TM7 P6 VIDEO BOARD C C PCI/AGP , LVDS , GPIO - SHEET 2 DDR MEMORY INTERFACE - SHEET 3 CORE_VDD , I/O POWER AND DACS VOLTAGE REGULATION - SHEET 4 - SHEET 5 B B DDR MEMORY SSTL-2 - SHEET 6 SPREAD SPECTRUM & LCD CONN - SHEET 7 SYSTEM INTERFACE CONNECTOR


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    PDF GAD10 GAD11 GAD12 GAD13 GAD14 GAD15 GAD16 GAD17 GAD18 GAD19 T61p quanta computer quanta tm7 MAX1644 T22p GAD31 MD57 Z014 T9238

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    MAX1770-03

    Abstract: max1770 Matsuo nds336 MAX17000
    Text: 19-4759; Rev 1; 1/99 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 1-Cell to 3-Cell, High-Power 1A , Low-Noise, Step-Up DC-DC Converters Features The MAX1700/MAX1701 are high-efficiency, low-noise, step-up DC-DC converters intended for use in batterypowered wireless applications. They use a synchronous-rectified pulse-width-modulation (PWM) boost


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    PDF 800mA 300kHz MAX1701) MAX1700/MAX1701 MAX1700/MAX1701 MAX1701 MAX1700 MAX1770-03 max1770 Matsuo nds336 MAX17000

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    MAX1763

    Abstract: T510 1N5817 EP10QY03 LPT3305 MAX1763EEE MAX1763EUE MBR0520L MBRO520L NDS336P
    Text: 19-1698; Rev 1; 2/01 KIT ATION EVALU LE B A IL A AV 1.5A, Low-Noise, 1MHz, Step-Up DC-DC Converter The MAX1763 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. This device maintains exceptionally low quiescent supply current 110µA despite its


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    PDF MAX1763 MAX1763 T510 1N5817 EP10QY03 LPT3305 MAX1763EEE MAX1763EUE MBR0520L MBRO520L NDS336P

    schematic sumida backlight inverter

    Abstract: CMSD4448 flyback transformer sanyo Flyback Xfmr l3 sot323 sot23 6333 5v C3216X7R1E105KT LMK316BJ475ML MAX1800 MAX1800EVKIT
    Text: 19-1985; Rev 1; 1/02 MAX1800 Evaluation Kit Features The MAX1800 evaluation kit EV kit accepts 1.8V to 5.5V battery voltages and provides all of the output voltages required in digital still cameras (DSC). The EV kit consists of the MAX1800 multi-output master converter


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    PDF MAX1800 MAX1801 V/400mA) V/200mA) V/100mA) V/10mA, V/50mA, schematic sumida backlight inverter CMSD4448 flyback transformer sanyo Flyback Xfmr l3 sot323 sot23 6333 5v C3216X7R1E105KT LMK316BJ475ML MAX1800EVKIT

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    MMC-SD-SDDMF-0095B-KINGFONT

    Abstract: TFT-G240320LTSW-118W-E BD557 1376408-1 MINI_USB-AB p231d X192 J4G3 MINI-USB-AB Kingfont
    Text: GND 2k RESET_IN V3A VREF P0.10-TXD2 P0.12-PORT-PWR-B P0.18-MOSI P0.22 P0.26-AOUT P1.3-MCICMD P1.11-MCIDAT2 P1.19 P1.23-LCDVD13 BDQM1 BCAS BBLS1 BWE BA23 BA21 BA19 BA17 P3.31-BD31 P3.29-PWM1.6-BD29 P3.27-PWM1.4-BD27 P3.25-PWM1.2-BD25 P3.23-BD23 P3.21-DTR1-BD21


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    PDF 1N4148 22uF/10V 33F/5 FDV303N 10-EINT0 11-LCDCLKIN 8-LCDVD16 28-SCL-A-LCDVD22 29-SDA-A-LCDVD23 15-SCK MMC-SD-SDDMF-0095B-KINGFONT TFT-G240320LTSW-118W-E BD557 1376408-1 MINI_USB-AB p231d X192 J4G3 MINI-USB-AB Kingfont

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    Untitled

    Abstract: No abstract text available
    Text: 19-1336; Rev 2; 11/98 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered


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    PDF MAX1703 MAX1703 MAX8865/MAX8866

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    027Q

    Abstract: NDS336P
    Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


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    PDF NDS336P --125-C LSD1130 027Q

    S336P

    Abstract: No abstract text available
    Text: June 1997 F /\IR G H II_ D M IC O N D U C T O R tm NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features SuperS0T -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


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    PDF NDS336P OT-23 S336P

    Untitled

    Abstract: No abstract text available
    Text: June 1997 F A IR C H IL D SEM ICONDUCTO R tm NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


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    PDF NDS336P NDS336P

    NDS336P

    Abstract: p-Channel Logic Level Enhancement Mode
    Text: June 1997 FAIRCHILD ìm ic d n d u c to r - NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


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    PDF NDS336P NDS336P p-Channel Logic Level Enhancement Mode

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


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    PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P

    MAX1703EVKIT

    Abstract: No abstract text available
    Text: >M>JXiyki 19-1336; Rev 0; 1/98 1-Cell to 3-Cell, H i g h - P o w e r 1,5A , L o w - N o i s e , St e p - U p DC-DC C o n v e r t e r The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. It uses a synchronous-rectified


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    PDF MAX1703 140mi2, MAX1703EVKIT