NDS336P Search Results

027Q

Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS

S336P

Contextual Info: June 1997 F /\IR G H II_ D M IC O N D U C T O R tm NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features SuperS0T -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDS336P

Contextual Info: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

Contextual Info: June 1997 F A IR C H IL D SEM ICONDUCTO R tm NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDS336P

Abstract: p-Channel Logic Level Enhancement Mode
Contextual Info: June 1997 FAIRCHILD ìm ic d n d u c to r - NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDS336P

Contextual Info: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,

NDS336P

Contextual Info: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

MAX1703

Abstract: MAX1703ESE max170306 low noise block down converter p-channel mosfet transistor low power NDS336 10mmho
Contextual Info: 19-1336; Rev 2; 11/98 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered

MAX1703

Abstract: MAX1703ESE pwm CONTROLLER BLOCK DIAGRAM
Contextual Info: 19-1336; Rev 0; 1/98 KIT ATION EVALU LE B A IL A AV 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features ♦ Up to 95% Efficiency ♦ Up to 1.5A Output ♦ Fixed 5V or Adjustable Step-Up Output (2.5V to 5.5V)

T61p

Abstract: quanta computer quanta tm7 MAX1644 T22p GAD31 GAD10 MD57 Z014 T9238
Contextual Info: 8 7 6 5 4 3 2 1 D D TM7 P6 VIDEO BOARD C C PCI/AGP , LVDS , GPIO - SHEET 2 DDR MEMORY INTERFACE - SHEET 3 CORE_VDD , I/O POWER AND DACS VOLTAGE REGULATION - SHEET 4 - SHEET 5 B B DDR MEMORY SSTL-2 - SHEET 6 SPREAD SPECTRUM & LCD CONN - SHEET 7 SYSTEM INTERFACE CONNECTOR

MAX1770-03

Abstract: max1770 Matsuo nds336 MAX17000
Contextual Info: 19-4759; Rev 1; 1/99 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 1-Cell to 3-Cell, High-Power 1A , Low-Noise, Step-Up DC-DC Converters Features The MAX1700/MAX1701 are high-efficiency, low-noise, step-up DC-DC converters intended for use in batterypowered wireless applications. They use a synchronous-rectified pulse-width-modulation (PWM) boost

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

601lt

Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
Contextual Info: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |

MAX1763

Abstract: T510 1N5817 EP10QY03 LPT3305 MAX1763EEE MAX1763EUE MBR0520L MBRO520L NDS336P
Contextual Info: 19-1698; Rev 1; 2/01 KIT ATION EVALU LE B A IL A AV 1.5A, Low-Noise, 1MHz, Step-Up DC-DC Converter The MAX1763 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. This device maintains exceptionally low quiescent supply current 110µA despite its

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

MMC-SD-SDDMF-0095B-KINGFONT

Abstract: TFT-G240320LTSW-118W-E BD557 1376408-1 MINI_USB-AB p231d X192 J4G3 MINI-USB-AB Kingfont
Contextual Info: GND 2k RESET_IN V3A VREF P0.10-TXD2 P0.12-PORT-PWR-B P0.18-MOSI P0.22 P0.26-AOUT P1.3-MCICMD P1.11-MCIDAT2 P1.19 P1.23-LCDVD13 BDQM1 BCAS BBLS1 BWE BA23 BA21 BA19 BA17 P3.31-BD31 P3.29-PWM1.6-BD29 P3.27-PWM1.4-BD27 P3.25-PWM1.2-BD25 P3.23-BD23 P3.21-DTR1-BD21

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: 19-1336; Rev 2; 11/98 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered

MAX1703EVKIT

Contextual Info: >M>JXiyki 19-1336; Rev 0; 1/98 1-Cell to 3-Cell, H i g h - P o w e r 1,5A , L o w - N o i s e , St e p - U p DC-DC C o n v e r t e r The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. It uses a synchronous-rectified

MAX1703

Abstract: MAX1703ESE wireless dect
Contextual Info: 19-1336; Rev 2; 11/98 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 1-Cell to 3-Cell, High-Power 1.5A , Low-Noise, Step-Up DC-DC Converter _Features The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered

schematic sumida ccfl inverter

Abstract: TDK flyback transformer FBM diode 25Q41 CMSD4448
Contextual Info: 19-1985; Rev 0; 3/01 MAX1800 Evaluation Kit Features ♦ 10 Outputs 1 Synchronous Rectified Step-Up Converter 2 Step-Up Converters 1 Low-Dropout Linear Regulator Output 6 Flyback Outputs The EV kit’s outputs are adjustable and are suitable for applications running from 2- or 3-cell alkaline, NiCd, or

78R12

Abstract: l55a INVENTEC cn520 26DH3 2D41 FDS6675 SCM54_5A 3A40V
Contextual Info: Q47 1 2 3 4 AC_DRV S D G 8 7 6 5 FDS6675 D37 BAT54 1 R69 1K 3 1 2 0.01_1W_1% 1 U6 8 U6 1 8 5 7 0.1UF_10V R51 1K_1% 1 142- ENABLE AC_SEL ALARM R60 OPEN TP5 2 BAT_LATCH_RST 4- 2 TP7 D33 UDZS5.6B S 1 1 R47 2 1M_5% 1 R50 2 1M_5% 1 C20 2 0.1UF_10V R52 1 G TP16

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509