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    NDS351 Price and Stock

    Flip Electronics NDS351N

    N-CHANNEL LOGIC LEVEL ENHANCEMEN
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    DigiKey NDS351N Reel 3,000
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    onsemi NDS351N

    MOSFET N-CH 30V 1.1A SUPERSOT3
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    Avnet Americas NDS351N Reel 0 Weeks, 2 Days 4,167
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    Flip Electronics NDS351N 7,000
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    Flip Electronics NDS351AN

    MOSFET N-CH 30V 1.4A SUPERSOT3
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    onsemi NDS351AN

    MOSFET N-CH 30V 1.4A SUPERSOT3
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    DigiKey NDS351AN Cut Tape 1
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    NDS351AN Digi-Reel 1
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    NDS351AN Reel 3,000
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    Newark NDS351AN Cut Tape 3,000
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    Bristol Electronics NDS351AN 1,260
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    Chip-Germany GmbH NDS351AN 216
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    Flip Electronics NDS351AN 483,889
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    IBS Electronics NDS351AN 1,000 1,000
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    Wuhan P&S NDS351AN 2,492 1
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    MOSLEADER NDS351N-NL-ML

    N-Channel 30V 1.1A SOT-23-3
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    DigiKey NDS351N-NL-ML Reel 200
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    Find more NDS351 price and stock on Findchips.com

    NDS351 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS351AN Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS351AN Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effec Original PDF
    NDS351AN Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS351AN Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS351AN_NL Fairchild Semiconductor N-Channel, Logic Level, PowerTrench MOSFET Original PDF
    NDS351N Fairchild Semiconductor Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS351N Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effec Original PDF
    NDS351N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS351N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDS351 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDS351N

    Abstract: No abstract text available
    Text: March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.1A, 30V. RDS ON = 0.25Ω @ VGS = 4.5V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		NDS351N NDS351N PDF

    NDS351AN

    Abstract: No abstract text available
    Text: April 1997 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS351AN OT-23 NDS351AN PDF

    NDS351AN

    Abstract: No abstract text available
    Text: N July 1996 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS351AN OT-23 NDS351AN PDF

    NDS351N

    Abstract: No abstract text available
    Text: N March1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		March1996 NDS351N NDS351N PDF

    SOT-23 marking 351a

    Abstract: No abstract text available
    Text: NDS351AN N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS351AN SOT-23 marking 351a PDF

    NDS351N

    Abstract: No abstract text available
    Text: March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.1A, 30V. RDS ON = 0.25Ω @ VGS = 4.5V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		NDS351N NDS351N PDF

    NEC555

    Abstract: J1 diode J3 diode NDS351AN r21 diode DIODE j1 diode R12 RES-2 c418
    Text: J1 D17 D18 J3 DIODE DIODE +VCC 1 1 VCC+ F1 FUSE1 J2 1 VCC- C5 CAP R20 RES2 R21 C6 SW1 SW SPST RES2 C3 1 8 U2 2 7 3 NEC555 6 4 5 CAP C4 1 8 U1 2 7 3 NEC555 6 4 5 CAP C2 CAP C1 CAP R19 CAP RES2 R22 RES2 Q1 NDS351AN VR1 POT1 R17 RES2 R18 RES2 C7 CAP R23 RES2


    Original     		NEC555 NDS351AN J1 diode J3 diode NDS351AN r21 diode DIODE j1 diode R12 RES-2 c418 PDF

    NDS351AN

    Abstract: No abstract text available
    Text: April 1997 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS351AN OT-23 NDS351AN PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.1A, 30V. RDS ON = 0.25Ω @ VGS = 4.5V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		NDS351N PDF

    SOT-23 marking 351a

    Abstract: NDS351AN 351a sot-23 nds351an APPLICATION CIRCUIT marking 351A 351a SOT23
    Text: NDS351AN N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS351AN OT-23 SOT-23 marking 351a NDS351AN 351a sot-23 nds351an APPLICATION CIRCUIT marking 351A 351a SOT23 PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    2n3904 pre-amp application note

    Abstract: TSH5400 14RT1 HSDL4220 NDS351N BPV22NF BPW34FA LT1319 LT1319CS RC12K
    Text: LT1319 Multiple Modulation Standard Infrared Receiver OBSOLETE: FOR INFORMATION PURPOSES ONLY Contact Linear Technology for Potential Replacement U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1319 is a general purpose building block that


    Original     		LT1319 152mm) 254mm) LT1113 LT1169 LT1222 500MHz 1319fb 2n3904 pre-amp application note TSH5400 14RT1 HSDL4220 NDS351N BPV22NF BPW34FA LT1319 LT1319CS RC12K PDF

    MSTAR 3393

    Abstract: MST9131 mstar scaler W83L950 foxconn db3 C432 SC1404ISS db3 c503 PC97 "Socket 754"
    Text: H16 HOLES_S276D118 H1 HOLES_S276D118 H23 H19 HOLES_S276D118 HOLES_S276D118 l6_4mil 2 H4 1 1 1 1 1 2 1 l1_4mil D JP15 JP7 2 1 l1_diff_6mil l1_diff_5mil# JP8 2 1 l1_diff_5mil l8_diff_6mil# JP13 2 1 l8_diff_6mil l8_diff_5mil# JP11 2 1 l8_diff_5mil l3_diff_4mil#


    Original     		M760-1 M760-2 M760-3 M760-4 SIS-301C 963L-1 963L-2 963L-3 963L-4 W83950D MSTAR 3393 MST9131 mstar scaler W83L950 foxconn db3 C432 SC1404ISS db3 c503 PC97 "Socket 754" PDF

    MS10105

    Abstract: pc101 v8 M23D5 3.5 DC Jack C6799 APA2308 c7343 footprint RTL8101 MAX1907 D0b02
    Text: 5 4 3 2 1 SOCKET 478 Banias 478 uFCPGA MS1010 BLOCK DIAGRAM Rev. 0C PAGE 3,4,5 D D SYS POWER FSB 400MHZ LCD DISPLAY PAGE 17 LVDS RAMDAC CRT DISPLAY PAGE 17 PAGE 16 200/266/333 MHz DDR SO-DIMM X2 PAGE 13,14,15 INTEL 855GME VIDEO BRIDGE TV-OUT CONNECTOR NORTH


    Original     		MS1010 400MHZ 855GME MAX1907 MAX1715 MAX1902 CH7009 66MHZ 14MHz MS-1010 MS10105 pc101 v8 M23D5 3.5 DC Jack C6799 APA2308 c7343 footprint RTL8101 MAX1907 D0b02 PDF

    TAIMAG HD 081 A

    Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
    Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2


    Original     		MEROM/965-PM/ICH8-M/NB8P-GS CK505) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ISL6227 FDS2501 TPS51116 MAX1844 TAIMAG HD 081 A ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627 PDF

    IT8511TE

    Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
    Text: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)


    Original     		M7X/66-M GEN-ICS9LPR363AGLF-T C7310 C7320, C7321. Q4401 IT8511TE asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448 PDF

    realtek alc660

    Abstract: ALC660 F3J INVERTER CABLE asus RM04F M64-M ATI M64-M pt5737 QG82945PM MAC522
    Text: 5 A * 02 System Setting 62 USB CONN 03 * 63 * 04 CPU-YONAH HOST 64 ISA ROM 05 CPU-YONAH(PWR) 65 * 06 * 66 LED 07 NB-945PM(HOST) 67 * 08 NB-945PM(DMI & CFG) 68 DC & BAT IN 09 NB-945PM(GRAPHIC) 69 * 10 NB-945PM(DDR2) 70 Debug CONN. 11 NB-945PM(PWR) 71 * 12


    Original     		NB-945PM M7X/64-M realtek alc660 ALC660 F3J INVERTER CABLE asus RM04F M64-M ATI M64-M pt5737 QG82945PM MAC522 PDF

    SLB 9635

    Abstract: I945G sc1470I ICS954310 MS1057 pll i945gm Yonah 478 alc882 1CN1212 SAMA5
    Text: 5 4 3 2 1 MS1057 VER:0.B +3V +5V DC JACK & Selector Yonah 478 Page 3,4,5 D C B MAX 1999 Page 34 D VDDR +1_8VSUS +1_5VRUN Page 32 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU (HOST BUS) 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:i945GM-1 (HOST) 07:i945GM-2 (DMI/VGA)


    Original     		MS1057 i945GM-1 i945GM-2 i945GM-3 i945GM-4 i945GM-5 i945GM-6 ICS954301) OZ128 RTL8111B SLB 9635 I945G sc1470I ICS954310 pll i945gm Yonah 478 alc882 1CN1212 SAMA5 PDF

    rb40 bridge

    Abstract: TPT50 RB152 RT113 rt842 RTL8101L cb311 bridge rb60 Socket AM2 micro-star
    Text: 5 4 3 2 1 SYS POWER MS1022 BLOCK DIAGRAM Rev. 0A Dothan SOCKET 479 478 uFCPGA PAGE 3,4,5 D CHARGER VRAM DC JACK & SELECTOR +1.1/1.25V VGA Power +1.2V PCI-E Power HOST BUS PAGE 44 , 45 , 46 PAGE 33 FSB 400 / 533 MHz PAGE 34 +1.5V +1.8VDDRM SMDDR_VTERM OZ816


    Original     		MS1022 OZ816 SC1470 LM1117MPX-ADJ SC1403 MAX1907 NV44M 915PM 14MHZ FMT11 rb40 bridge TPT50 RB152 RT113 rt842 RTL8101L cb311 bridge rb60 Socket AM2 micro-star PDF

    msi G31 crb

    Abstract: sc413 2pc501 nvidia nb8 vga board APL5912 MS-1636 nvidia BGA OZ711SP1-1 10n400 Socket AM2
    Text: A B C D E MS-1636 VER : 1.0 +3V , +5V TPI51120 DC JACK & Selector Merom Page 3,4 Page 40 1 2 3 1 +VTT 1.05V 01:BLOCK DIAGRAM 02:PLATFORM 03:Merom-1 CPU (HOST BUS) 04:Merom-2 CPU (POWER/GND) 05:i965PM-1 (HOST) CRT 06:i965PM-2 (DMI/VGA) RGB 07:i965PM-3 (DDR2)


    Original     		MS-1636 TPI51120 i965PM-1 i965PM-2 i965PM-3 i965PM-4 i965PM-5 i965PM-6 32MX16 msi G31 crb sc413 2pc501 nvidia nb8 vga board APL5912 nvidia BGA OZ711SP1-1 10n400 Socket AM2 PDF

    NDS351N

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This


    OCR Scan     		NDS351N S351N PDF

    NDS351N National Semiconductor

    Abstract: NDS351N 25C2
    Text: March 1996 National tß Semiconductor ” NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		NDS351N NDS351N National Semiconductor NDS351N 25C2 PDF

    NDS351AN

    Abstract: NDS351A
    Text: April 1997 FAIRCHILD M lC O N D U C T O R NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS351AN NDS351 NDS351A PDF

    NDS351AN

    Abstract: No abstract text available
    Text: A p ril 1997 FAIRCHILD M IC D N D U C T D R tm NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS351AN NDS351AN PDF