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    NDS841 Price and Stock

    Rochester Electronics LLC NDS8410A

    MOSFET N-CH 30V 10.8A 8SOIC
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    DigiKey NDS8410A Bulk 195,663 460
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    onsemi NDS8410

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey NDS8410 Reel 2,500
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    NDS8410 Cut Tape 1
    • 1 $1.7
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    NDS8410 Digi-Reel 1
    • 1 $1.7
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    onsemi NDS8410A

    MOSFET N-CH 30V 10.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS8410A Reel 2,500
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    National Semiconductor Corporation NDS8410

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    Bristol Electronics NDS8410 3,489
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    Quest Components NDS8410 2,791
    • 1 $1.93
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    Fairchild Semiconductor Corporation NDS8410A

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    Bristol Electronics NDS8410A 2,440 7
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    NDS8410A 2,014
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    NDS8410A 816
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    Quest Components NDS8410A 3,668
    • 1 $2.103
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    • 1000 $0.7361
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    NDS8410A 2,519
    • 1 $1.2618
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    NDS8410A 1,952
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    NDS8410A 1,603
    • 1 $2.103
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    • 100 $2.103
    • 1000 $0.5468
    • 10000 $0.5258
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    NDS8410A 815
    • 1 $2.103
    • 10 $2.103
    • 100 $1.0515
    • 1000 $0.8412
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    NDS8410A 652
    • 1 $0.7
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    NDS8410A 172
    • 1 $1.8
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    Rochester Electronics NDS8410A 10,250 1
    • 1 $0.6598
    • 10 $0.6598
    • 100 $0.6202
    • 1000 $0.5608
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    Find more NDS841 price and stock on Findchips.com

    NDS841 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8410 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 10A 8-SOIC Original PDF
    NDS8410 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8410 National Semiconductor Single N-Channel Enhancement M ode Field Effect Transistor Scan PDF
    NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410A Fairchild Semiconductor Single 30V N-Channel PowerTrench MOSFET Original PDF
    NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8410A National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8410A_NL Fairchild Semiconductor 30V Single N-Channel PowerTrench MOSFET Original PDF
    NDS8410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8410S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS841 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS8410

    Abstract: No abstract text available
    Text: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410 NDS8410

    Untitled

    Abstract: No abstract text available
    Text: NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and


    Original     		PDF NDS8410A

    NDS8410A

    Abstract: No abstract text available
    Text: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410A NDS8410A

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410
    Text: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8410

    NDS8410S

    Abstract: No abstract text available
    Text: February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410S NDS8410S

    NDS8410S

    Abstract: 24D16 pf790
    Text: N February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS8410S NDS8410S 24D16 pf790

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410A
    Text: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8410A

    NDS8410

    Abstract: No abstract text available
    Text: N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS8410 NDS8410

    F63TNR

    Abstract: F852 FDS9953A L86Z NDS8410S CBVK741B019 F011
    Text: February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410S F63TNR F852 FDS9953A L86Z NDS8410S CBVK741B019 F011

    NDS8410A

    Abstract: No abstract text available
    Text: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8410A NDS8410A

    NDS8410A

    Abstract: No abstract text available
    Text: N January 1997 PRELIMINARY NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		PDF NDS8410A NDS8410A

    NDS8410A

    Abstract: No abstract text available
    Text: NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and


    Original     		PDF NDS8410A NDS8410A

    NDS8410A

    Abstract: No abstract text available
    Text: NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and


    Original     		PDF NDS8410A NDS8410A

    CEP1238R0MC

    Abstract: ZENER DIODE t2d 50V 20A step down regulator T2D DIODE 49 fet alternator regulator circuit T2D DIODE FDS6680A LTC1628 LTC3707 LTC3707EGN
    Text: LTC3707 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3707 is a high performance dual step-down switching regulator controller that drives N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3707 300kHz. LTC1735 16-Pin LTC1736 24-Pin LTC1929 3707f CEP1238R0MC ZENER DIODE t2d 50V 20A step down regulator T2D DIODE 49 fet alternator regulator circuit T2D DIODE FDS6680A LTC1628 LTC3707 LTC3707EGN

    CDRH125-100MC

    Abstract: LM2640 LM2640MTC-ADJ LM2641 NDS8410
    Text: LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2640 is a dual step-down power supply controller intended for application in notebook personal computers and other battery-powered equipment. Fixed-frequency synchronous drive of logic-level N-channel


    Original     		PDF LM2640 LM2640 CDRH125-100MC LM2640MTC-ADJ LM2641 NDS8410

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: LTC3728 Dual, 550kHz, 2-Phase Synchronous Step-Down Switching Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise OPTI-LOOP Compensation Minimizes COUT


    Original     		PDF LTC3728 550kHz, 250kHz 550kHz 550kHz 12-Phase, LTC3729 3728fg

    LM2640

    Abstract: LM2640MTC-ADJ
    Text: LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2640 is a dual step-down power supply controller intended for application in notebook personal computers and other battery-powered equipment. n


    Original     		PDF LM2640 LM2640 LM2640MTC-ADJ

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8410S

    Untitled

    Abstract: No abstract text available
    Text: January 1997 N ational PR ELIM IN A R Y Semiconductor NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8410A NDS8410A 193tQ

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.


    OCR Scan     		PDF NDS8410 NDSS41

    Untitled

    Abstract: No abstract text available
    Text: February 1997 National Semiconductor NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8410S NDS8410S 193tQ

    Untitled

    Abstract: No abstract text available
    Text: February 1996 N NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8410 NDS8410 193tQ

    s8410

    Abstract: No abstract text available
    Text: March 1997 FAIRCHILD M l G C IN D U O T O R NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8410A S8410A s8410