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    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.


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