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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell	OCR Scan	PDF	NDS8426 NDSS426

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Untitled

Abstract: No abstract text available
Text: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell

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NDS8426 NDSS426