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    NE3513M04 Search Results

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    NE3513M04 Price and Stock

    Rochester Electronics LLC NE3513M04-T2B-A

    RF MOSFET GAAS HJ-FET 2V 4MMOLD
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    DigiKey NE3513M04-T2B-A Bulk 4,755,000 310
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    California Eastern Laboratories (CEL) NE3513M04-A

    RF MOSFET GAAS HJ-FET 2V M04
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    California Eastern Laboratories (CEL) NE3513M04-T2-A

    RF MOSFET GAAS HJ-FET 2V M04
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    California Eastern Laboratories (CEL) NE3513M04-T2B-A

    RF MOSFET GAAS HJ-FET 2V 4MMOLD
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    DigiKey NE3513M04-T2B-A Reel 1
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    Renesas Electronics Corporation NE3513M04-T2B-A

    NE3513M04 - RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET '
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    Rochester Electronics NE3513M04-T2B-A 104,690 1
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    NE3513M04 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE3513M04-A Renesas Electronics RF FETs, Discrete Semiconductor Products, IC HJ-FET RF N-CH LNA M04 4SMD Original PDF
    NE3513M04-T2-A Renesas Electronics RF FETs, Discrete Semiconductor Products, IC HJ-FET RF N-CH LNA M04 4SMD Original PDF
    NE3513M04-T2B-A CEL Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04 4SMD Original PDF

    NE3513M04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE3513

    Abstract: MARKING V84 NE3513M04
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		PDF NE3513M04 R09DS0028EJ0100 NE3513M04-T2 NE3513M04-T2-A NE3513M04 NE3513 MARKING V84

    NE3513

    Abstract: NE3513M04 MARKING V84
    Text: Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value


    Original     		PDF NE3513M04 R09DS0028EJ0100 NE3513M04-T2 NE3513M04-T2-A NE3513 NE3513M04 MARKING V84

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR