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onsemi NE5517DR2G IC OPAMP TRANSCOND 2 CIRC 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5517DR2G	Cut Tape	5,714		1	1 $2.54 10 $1.597 100 $1.0726 1000 $0.78112 10000 $0.78112	Buy Now
	NE5517DR2G	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6875	Buy Now
Avnet Americas	NE5517DR2G	Reel		10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.65476	Buy Now
Mouser Electronics	NE5517DR2G		3,208			1 $2.41 10 $1.36 100 $1.08 1000 $0.782 10000 $0.687	Buy Now
Newark	NE5517DR2G	Reel			2,500	1 $2.16 10 $2.16 100 $2.16 1000 $2.16 10000 $1.93	Buy Now
Onlinecomponents.com	NE5517DR2G					1 - 10 - 100 - 1000 $1.05 10000 $0.67	Buy Now

Bristol Electronics	NE5517DR2G		1,970			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NE5517DR2G		1,576			1 $2.7872 10 $2.7872 100 $2.7872 1000 $1.0452 10000 $1.0452	Buy Now
	NE5517DR2G		1,576			1 $2.7872 10 $2.7872 100 $2.7872 1000 $1.0452 10000 $1.0452	Buy Now
Rochester Electronics	NE5517DR2G		350		1	1 $0.7639 10 $0.7639 100 $0.7181 1000 $0.6493 10000 $0.6493	Buy Now
Avnet Silica	NE5517DR2G			11 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NE5517DR2G			12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NE5517DR2G		30,936			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NE5517N IC OPAMP TRANSCOND 2 CIRC 16DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5517N	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NE5517D IC OPAMP TRANSCOND 2 CIRC 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5517D	Tube			480	1 - 10 - 100 - 1000 $1.00677 10000 $1.00677	Buy Now
ComSIT USA	NE5517D		172			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	NE5517D		30,936			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics NE5517DG OPERATIONAL TRANSCONDUCTANCE AMP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5517DG	Tube			1,000	1 - 10 - 100 - 1000 $0.77 10000 $0.77	Buy Now
onsemi NE5517DG IC OPAMP TRANSCOND 2 CIRC 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5517DG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	NE5517DG	Tube		0 Weeks, 2 Days	878	1 - 10 - 100 - 1000 $0.76139 10000 $0.74357	Buy Now
Newark	NE5517DG	Bulk	27		1	1 $0.789 10 $0.789 100 $0.789 1000 $0.789 10000 $0.789	Buy Now
Rochester Electronics	NE5517DG		78		1	1 $0.9208 10 $0.9208 100 $0.8656 1000 $0.7827 10000 $0.7827	Buy Now
Chip One Stop	NE5517DG	Tube	4			1 $0.968 10 $0.968 100 $0.968 1000 $0.968 10000 $0.968	Buy Now

Flip Electronics	NE5517DG		30,936			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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NE551 Datasheets (97)

Part	Manufacturer	Description	Datasheet Type	PDF
NE5510179A	NEC	3.6 V OPERATION SILICON RF POWER LD-MOS FET	Original	PDF
NE5510179A-T1	NEC	3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers.	Original	PDF
NE5510179A-T1	NEC	3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIER	Original	PDF
NE5510279A	NEC	4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS	Original	PDF
NE5510279A-T1	NEC	3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers.	Original	PDF
NE5510279A-T1	NEC	4.8 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 2 W Transmission Amplifiers	Original	PDF
NE5510379A	NEC	4.8 V OPERATION SILICON RF POWER LD-MOS FET	Original	PDF
NE5510379A-T1	NEC	4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIER	Original	PDF
NE5511279A	California Eastern Laboratories	7.5 V UHF BAND RF POWER SILICON LD-MOS FET	Original	PDF
NE5511279A	NEC	7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS	Original	PDF
NE5511279A-T1	NEC	7.5 V Operation Silicon RF Power LD-MOS FET for UHF-Band 10 W Transmission Amplifiers	Original	PDF
NE5511279A-T1	NEC	7.5 V UHF band RF power silicon LD-MOS FET	Original	PDF
NE5511279A-T1-A	California Eastern Laboratories	7.5 V UHF BAND RF POWER SILICON LD-MOS FET	Original	PDF
NE5511279A-T1-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, MOSFET LD N-CHAN 7.5V 79A	Original	PDF

NE5511279A-T1A	NEC	7.5 V Operation Silicon RF Power LD-MOS FET for UHF-Band 10 W Transmission Amplifiers	Original	PDF
NE5511279A-T1A	NEC	7.5 V UHF band RF power silicon LD-MOS FET	Original	PDF
NE5511279A-T1A-A	California Eastern Laboratories	7.5 V UHF BAND RF POWER SILICON LD-MOS FET	Original	PDF
NE5512	Philips Semiconductors	Dual high-performance operational amplifier	Original	PDF
NE5512	Unknown	Monolithic Op Amp Data Book	Scan	PDF
NE5512D	Philips Semiconductors	Dual high-performance operational amplifier	Original	PDF

NE551 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE5517 Abstract: transconductance amplifier SL00307 LM13600 LM13600 datasheet philips kt SL00315 NE5517N Operational Transconductance Amplifier Text: INTEGRATED CIRCUITS NE5517/NE5517A Dual operational transconductance amplifier Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductor Product data Dual operational transconductance amplifier	Original	NE5517/NE5517A NE5517 transconductance amplifier SL00307 LM13600 LM13600 datasheet philips kt SL00315 NE5517N Operational Transconductance Amplifier	PDF
NE5511279A Abstract: NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS Text: NEC Silicon LD-MOS FETs www.cel.com Silicon LD-MOSFETs Typical Specifications @ TC = 25°C Part Number POUT dBm TYP NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR 26.0 11 40.0 32.0 35.5 33.0 40.4 VDS (V) IDSQ (mA) Package Code 19 3.0 200 79A 0.9 27	Original	NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR NE5511279A NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS	PDF
NE5517 Abstract: ABCQ AN145 ABC2 Text: INTEGRATED CIRCUITS AN145 NE5517/A transconductance amplifier applications 1988 Dec Philips Semiconductors Philips Semiconductorscs Application note NE5517/A transconductance amplifier applications increasing voltage. If a negative is applied, the center frequency will	Original	AN145 NE5517/A NE5517 IABCSL00883 SL00884 SL00885 SL00886 ABCQ AN145 ABC2	PDF
12v to Amplifier 200w circuit diagrams Abstract: 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NE5517 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram AU5517 Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of	Original	NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram	PDF
NE5511279A Abstract: NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and	Original	NE5511279A NE5511279A PU10322EJ01V0DS NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec	PDF
NE5510279A Abstract: NE5510279A-T1 Text: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate	Original	NE5510279A NE5510279A NE5510279A-T1	PDF
NE5532N Abstract: NE5090N NE5534D NE532N LM319 NE5532AN NE5534AD NE5534AN ne555n SA612 Text: Philips Amplifiers, Comparators, Compandors, FM IF, Mixer Systems, Timers and Interface Operational Amplifiers Mfr.Õs Type SOIC PDIP NE5534AD NE5534D NE5230D SA5230D Ñ Ñ Ñ Ñ Ñ LM324D Ñ NE5534AN NE5534N Ñ Ñ NE5532N NE5532AN NE532N LM358N NE5517N LM324N	Original	NE5534AD NE5534AN NE5534D NE5534N NE5230D SA5230D NE5532N NE5532AN NE555N NE556N NE5090N NE532N LM319 SA612	PDF
NE5510179A Abstract: NE5510179A-T1 Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier	Original	NE5510179A NE5510179A NE5510179A-T1	PDF
thermometer lm324 Abstract: light sensor lm324 lm324 substitution IC NE 5514 NE5514 MOTION DETECTOR using lm348 photo diode motion sensor 567 tone 567 tone detector mfb bandpass filter Text: INTEGRATED CIRCUITS AN1441 Applications for the NE5514 1988 Dec Philips Semiconductors Philips Semiconductors Application note Applications for the NE5514 AN1441 of the signals from the X and Y axes, four-quadrant output may be fed to an X-Y plotter, oscilloscope or computer for simulation see	Original	AN1441 NE5514 NE5514 SE/NE5514 LM324/LM348, 1N914 2N2222 SL00848 thermometer lm324 light sensor lm324 lm324 substitution IC NE 5514 MOTION DETECTOR using lm348 photo diode motion sensor 567 tone 567 tone detector mfb bandpass filter	PDF
4810 mosfet Abstract: mosfet 5730 mosfet 4430 GSM1800 NE5510179A NE5510179A-T1 2.4 ghz mosfet Text: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A	Original	NE5510179A 24-Hour 4810 mosfet mosfet 5730 mosfet 4430 GSM1800 NE5510179A NE5510179A-T1 2.4 ghz mosfet	PDF
NE5510279A Abstract: NE5510279A-T1 Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5510279A NE5510279A NE5510279A-T1	PDF
NE5510379A Abstract: NE5510379A-T1 Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5510379A NE5510379A NE5510379A-T1	PDF
NE5511279A Abstract: NE5511279A-T1-A NE5511279A-T1A-A VP215 LDMOS NEC Text: NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, PACKAGE OUTLINE 79A (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. Drain 4.4 MAX. W • HIGH LINEAR GAIN:	Original	NE5511279A NE5511279A NE5511279A-T1-A NE5511279A-T1A-A VP215 LDMOS NEC	PDF
Marking W3 Abstract: NE5511279A-A NE5511279A-T1A Text: SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology	Original	NE5511279A NE5511279A HS350-P3 WS260 VP215 IR260 PU10322EJ01V0DS Marking W3 NE5511279A-A NE5511279A-T1A	PDF

12v to Amplifier 200w circuit diagrams Abstract: 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517 NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of	Original	NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram	PDF
Untitled Abstract: No abstract text available Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of	Original	NE5517, NE5517A, AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D	PDF
12v to Amplifier 200w circuit diagrams Abstract: 12v audio Amplifier 200w schematic diagrams 12v to Amplifier 200w schematic diagrams 200w stereo audio Amplifier diagram NE5517 NE5517AN 200w power amplifier circuit diagram SCHEMATIC 10kw Power Amplifier stereo amplifier 200W 200w transistor audio amplifier circuit diagram Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of	Original	NE5517, NE5517A, AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 12v audio Amplifier 200w schematic diagrams 12v to Amplifier 200w schematic diagrams 200w stereo audio Amplifier diagram NE5517AN 200w power amplifier circuit diagram SCHEMATIC 10kw Power Amplifier stereo amplifier 200W 200w transistor audio amplifier circuit diagram	PDF
operational transconductance amplifier Abstract: "PNP Transistor array" transconductance amplifier NE5517 lm13600 application notes LM13600 NE5517A NE5517AN NE5517D NE5517N Text: Signetics NE5517/ 5517A Dual Operational Transconductance Amplifier Product Specification Linear Products PIN CO NFIGURATIO N DESCRIPTION FEATURES The N E 5517 contains two current-con tro lled tran sc o n d u c ta n c e a m p lifiers, each with a differential input and push	OCR Scan	NE5517 NE5517. TC2I911S NE5517/5517A operational transconductance amplifier "PNP Transistor array" transconductance amplifier lm13600 application notes LM13600 NE5517A NE5517AN NE5517D NE5517N	PDF
5517AN Abstract: NE5517 5517A dual stereo variable resistor 5517D Operational Transconductance Amplifier Text: NE5517/551 Signetics 7A Dual Operational Transconductance Amplifier Product Specification Linear Products DESCRIPTION FEATURES The NE5517 contains two current-contro lle d tra n s c o n d u c ta n c e am plifiers, each with a differential input and pushpull output. The NE5517 offers signifi	OCR Scan	NE5517/551 NE5517 NE5517/5517A 5517AN 5517A dual stereo variable resistor 5517D Operational Transconductance Amplifier	PDF
NE5517 Abstract: TRANSISTOR BC 256 Text: AN145 Signetics NE5517/A Transconductance Amplifier Applications Application Note Linear Products DESCRIPTION The Signetics NE5517 is a truly versatile dual operational transconductance amplifier. In plain language, it is a voltage-to-current con verter governed by the transconductance gm,	OCR Scan	AN145 NE5517/A NE5517 TC06280S TC06290S TRANSISTOR BC 256	PDF
NE5512 Abstract: NE5514 SE5514 Text: - 272 NE5514 4 » PHILIPS ì m • S B S tt V s=±15V O X J U - l s - h :IV/ u s • m !zjf£:l.5mA/amp • « ± % ts T a-25°C • C M R R lOOdB m u ffili • P S R R llOdB m # N E 5 5 1 2 ® ? 7 V K • 9 -i 7° Ä s ts A irtT b W ff vo osä rw vom m sm .	OCR Scan	NE5514 100dB 110dB NE5512Â 164ead NE5514 SE5514 Ta-25 10kHz. 20kHz NE5512 SE5514	PDF
NE5517 Abstract: APPLICATION OF VOLTAGE DEPENDENT RESISTOR ABCQ Text: Application note Philip» Semiconductorscs Industrial Products NE5517/A transconductance amplifier applications DESCRIPTION increasing voltage. If a negative is applied, the center frequency will decrease lineariy with increasing negative voltage. This makes a	OCR Scan	NE5517/A AN145 NE5517 5517/A APPLICATION OF VOLTAGE DEPENDENT RESISTOR ABCQ	PDF
NE5512 Abstract: SA5512 SE5512 4C85 Text: - 271 NE5512 - PHILIPS • i n f o i l i # x ; u - u — h :IV/# s • 1 .5mA/amp Ta-25°C • C M R E :1 0 d B H ÌÌ)A ÌJ Ì • P S R R :ll()d B • f t ìf ig Ìlt ^ :6 0 0 Q li f fl m fé AilV t^W ± VoP)i&£FJ7b Vo(?>Mm££1Ì. AJjtUTmfìi A Itl	OCR Scan	NE5512 SE5512 NE5512/SA5512 SA5512 -4C--85 20kHz SE5512 4C85	PDF
Operational Transconductance Amplifier Abstract: No abstract text available Text: Product specification Philips Semiconductors Linear Products Dual operational transconductance amplifier NE5517/5517A PIN CONFIGURATION DESCRIPTION The N E 5517 contains tw o current-controlled transconductance am plifiers, each w ith a differential input and push-pull output. The	OCR Scan	NE5517/5517A sys101 Operational Transconductance Amplifier	PDF

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onsemi NE5517DR2G

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NE551 Datasheets (97)

NE551 Datasheets Context Search

NE5517

NE5511279A

NE5517

12v to Amplifier 200w circuit diagrams

NE5511279A

NE5510279A

NE5532N

NE5510179A

thermometer lm324

4810 mosfet

NE5510279A

NE5510379A

NE5511279A

Marking W3

12v to Amplifier 200w circuit diagrams

Untitled

12v to Amplifier 200w circuit diagrams

operational transconductance amplifier

5517AN

NE5517

NE5512

NE5517

NE5512

Operational Transconductance Amplifier