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    NE5510179A Search Results

    NE5510179A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE5510179A NEC 3.6 V OPERATION SILICON RF POWER LD-MOS FET Original PDF
    NE5510179A-T1 NEC 3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. Original PDF
    NE5510179A-T1 NEC 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIER Original PDF

    NE5510179A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE5510179A

    Abstract: NE5510179A-T1
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier


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    NE5510179A NE5510179A NE5510179A-T1 PDF

    4810 mosfet

    Abstract: mosfet 5730 mosfet 4430 GSM1800 NE5510179A NE5510179A-T1 2.4 ghz mosfet
    Text: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A


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    NE5510179A 24-Hour 4810 mosfet mosfet 5730 mosfet 4430 GSM1800 NE5510179A NE5510179A-T1 2.4 ghz mosfet PDF

    NE551

    Abstract: NE5510 4810 mosfet GSM1800 NE5510179A NE5510179A-T1
    Text: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A


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    NE5510179A 24-Hour NE551 NE5510 4810 mosfet GSM1800 NE5510179A NE5510179A-T1 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    NEC D 809 F

    Abstract: NE5510179A-T1 VP215 NE5510179A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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