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    NE552 Price and Stock

    California Eastern Laboratories (CEL) NE552R679A-A

    RF MOSFET LDMOS 3V 79A
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    California Eastern Laboratories (CEL) NE5520379A-T1A-A

    RF MOSFET LDMOS 3.2V 79A
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    California Eastern Laboratories (CEL) NE552R679A-T1A-A

    RF MOSFET LDMOS 3V 79A
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    DigiKey NE552R679A-T1A-A Reel 5,000
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    California Eastern Laboratories (CEL) NE5520279A-EVPW09

    EVAL BOARD NE5520279A 900MHZ
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    California Eastern Laboratories (CEL) NE552R479A-EVPW24

    EVAL BOARD NE552R479A
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    Mouser Electronics NE552R479A-EVPW24
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    NE552 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE5520279A California Eastern Laboratories 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A NEC NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A-EVPW04 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A Original PDF
    NE5520279A-EVPW09 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A 900MHZ Original PDF
    NE5520279A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520279A 2.4GHZ Original PDF
    NE5520279A-T1 NEC 3.2 V, 2 W, L&S band medium power silicon LD-MOSFET Original PDF
    NE5520279A-T1 NEC 3.2 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 1.6 W Transmission Amplifiers Original PDF
    NE5520279A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520279A-T1-A California Eastern Laboratories 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520279A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 1.6 W Transmission Amplifiers Original PDF
    NE5520379A California Eastern Laboratories 3.2V 3W L/S BAND MEDIUM POWER SILICON LD-MOSFET Original PDF
    NE5520379A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A NEC 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS Original PDF
    NE5520379A-EVPW04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5520379A Original PDF
    NE5520379A-T1 NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A California Eastern Laboratories 3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) Original PDF
    NE5520379A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A NEC NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. Original PDF
    NE5520379A-T1A-A California Eastern Laboratories NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet Original PDF

    NE552 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE552R479A

    Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.


    Original     		NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency PDF

    mch215f104zp

    Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz


    Original     		NE552R479A NE552R479A 100mA 300mA mch215f104zp J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk PDF

    NE5511279A

    Abstract: NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS
    Text: NEC Silicon LD-MOS FETs www.cel.com Silicon LD-MOSFETs Typical Specifications @ TC = 25°C Part Number POUT dBm TYP NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR 26.0 11 40.0 32.0 35.5 33.0 40.4 VDS (V) IDSQ (mA) Package Code 19 3.0 200 79A 0.9 27


    Original     		NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR NE5511279A NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS PDF

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS PDF

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC PDF

    DCS1800

    Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		NE5520279A NE5520279A DCS1800 NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec PDF

    NE552R679A

    Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2


    Original     		NE552R679A NE552R679A NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec PDF

    DCS1800

    Abstract: NE5520279A NE5520279A-T1
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15


    Original     		NE5520279A 0X001 NE5520279A HS350-P3 DCS1800 NE5520279A-T1 PDF

    NE5520379A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		NE5520379A NE5520379A PDF

    7530D

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		NE5520279A NE5520279A DCS1800 7530D PDF

    2.45 Ghz power amplifier 45 dbm

    Abstract: J842 2.45 Ghz power amplifier 30 db
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		NE552R479A NE552R479A HS350-P3 WS260 VP215 IR260 PU10124EJ03V0DS 2.45 Ghz power amplifier 45 dbm J842 2.45 Ghz power amplifier 30 db PDF

    NE5521

    Abstract: ne5521 application notes rvdt operation Rotary variable differential transformer AN1182 Rotary variable differential transformer, Schaevitz lvdt LVDT pressure transducer lvdt LVDT Signal Conditioner
    Text: LINEAR PRODUCTS AN1182 Using the NE5521 signal conditioner in multi-faceted applications Zahid Rahim Philips Semiconductors December 1988 Philips Semiconductors Application note Using the NE5521 signal conditioner in multi-faceted applications AN1182 Author: Zahid Rahim


    Original     		AN1182 NE5521 10-bit NE/SA/SE5521 SL00758 ne5521 application notes rvdt operation Rotary variable differential transformer AN1182 Rotary variable differential transformer, Schaevitz lvdt LVDT pressure transducer lvdt LVDT Signal Conditioner PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a


    Original     		NE5520379A NE5520379A IR260 VP215 WS260 HS350-P3 PU10122EJ03V0DS PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		NE5520379A NE5520379A PDF

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC PDF

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec PDF

    NE552R479A-T1A

    Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		NE552R479A NE552R479A NE552R479A-T1A VP215 GSM1900 NE552R479A-T1 ldmos nec PDF

    NE5520379A

    Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2


    Original     		NE552R679A NE552R679A PDF

    mch215f104zp

    Abstract: mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A ATC0603
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz


    Original     		NE552R479A NE552R479A HS350-P3 mch215f104zp mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A-T1A ATC0603 PDF

    LVDT Signal Conditioner

    Abstract: LVDT ne5520 NE5520N Signetics NE5520 Application note "lvdt Signal Conditioner" lvdt and information "Signal Conditioner" lvdt block diagram signetics linear
    Text: NE5520 Signetics LVDT Signal Conditioner Product Specification Linear Products PIN CONFIGURATIONS DESCRIPTION FEATURES Th e N E 5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transformers LVD T . The chip includes a low distortion amplitude sta­


    OCR Scan     		NE5520 NE5520 20kHz LVDT Signal Conditioner LVDT NE5520N Signetics NE5520 Application note "lvdt Signal Conditioner" lvdt and information "Signal Conditioner" lvdt block diagram signetics linear PDF

    LVDT

    Abstract: ne5520 NE5520N LVDT Signal Conditioner NE5520D NE5520F "lvdt Signal Conditioner" circuit of signal conditioning lvdt "Signal Conditioner" SINE WAVE oscillator
    Text: NE5520 NOT FOR NEW DESIGN LVDT Signal Conditioner Product Specification D ESCR IPTIO N The NE5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transform ers LVDT . The chip includes a low distortion am plitude sta­ ble sine wave oscillator with program m a­


    OCR Scan     		NE5520 NE5520 20kHz 1000k LVDT NE5520N LVDT Signal Conditioner NE5520D NE5520F "lvdt Signal Conditioner" circuit of signal conditioning lvdt "Signal Conditioner" SINE WAVE oscillator PDF

    LVDT Signal Conditioner

    Abstract: NE5520 lvdt Signal Conditioning 14pin IC
    Text: NE5520 NOT FOR NEW DESIGN LVDT Signal Conditioner Product Specification PIN CONFIGURATIONS DESCRIPTION FEATURES The NE5520 is a signal conditioning circuit for use with Linear Variable Differ­ ential Transformers LVDT . The chip includes a low distortion amplitude sta­


    OCR Scan     		NE5520 NE5520 20kHz OP1B460S 1000K OP1B500S OP1B510S TC211905 LVDT Signal Conditioner lvdt Signal Conditioning 14pin IC PDF

    ne5521 application notes

    Abstract: NE5521 Schaevitz lvdt
    Text: P hilip s S e m ico n du cto rs L inear P roducts A p p licatio n note Using the NE5521 signal conditioner in multi-faceted applications AN 1182 o u tp u t o f L F 3 5 6 to O V a t D C . U s e o f F E T in p u t o p a m p in s u r e s th at th e A C in p u t a t P in 4. D C c o m p o n e n t o f th e re c tifie d s ig n a l a t P in 5


    OCR Scan     		NE5521 ne5521 application notes Schaevitz lvdt PDF