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    NE6500379A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE6500379A NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE6500379A NEC 3W L, S-BAND POWER GaAs MESFET Original PDF
    NE6500379A NEC Semiconductor Selection Guide Original PDF
    NE6500379A NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Scan PDF
    NE6500379A-AZ NEC IC FET MISC MEDIUM POWER GaAs MESFET Original PDF
    NE6500379A-T1 NEC 3 W L, S-Band Power GaAs MESFET Original PDF
    NE6500379A-T1 NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Scan PDF

    NE6500379A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1


    Original     		NE6500379A IMT-2000, IMT2000, 24-Hour PDF

    GaAs MESFET

    Abstract: NE6500379A
    Text: PRELIMINARY DATA SHEET INIE C 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 10 dB TYP


    OCR Scan     		NE6500379A NE6500379A GaAs MESFET PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high


    OCR Scan     		NE6500379A NE6500379A NE6500379A-T1 PDF

    NE6500379A

    Abstract: NE6500379A-T1
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8


    Original     		NE6500379A NE6500379A NE6500379A-T1 24-Hour NE6500379A-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS 1 LSX 0.001 nH SOURCE Parameters Q1 Parameters


    Original     		NE6500379A 1e-14 10e-12 5e-12 25e-12 PDF

    nec 0882

    Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637
    Text: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @


    OCR Scan     		NE6500379A NE6500379A 24-Hour nec 0882 GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A-T1 GRM40-X7R104K025BL TF-100637 PDF

    nec 0882

    Abstract: No abstract text available
    Text: 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 MAX Source • HIGH LINEAR GAIN: 10 dB TYP Drain Drain


    Original     		NE6500379A 24-Hour nec 0882 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @


    OCR Scan     		NE6500379A NE6500379A NE6500379A-T1 24-Hour PDF

    nec 0882

    Abstract: NEc 79A 8582
    Text: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A IMT-2000, IMT2000, 24-Hour nec 0882 NEc 79A 8582 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES NE6500379A OUTLINE DIMENSIONS Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @


    OCR Scan     		NE6500379A NE6500379A NE6500379A-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @


    OCR Scan     		NE6500379A NE6500379A NE6500379A-T1 24-Hour PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000
    Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000 PDF

    NE6500379A

    Abstract: NE6500379A-T1
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high


    Original     		NE6500379A NE6500379A NE6500379A-T1 NE6500379A-T1 PDF

    1E-14

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 GATE CDS PKG 0.1 pF CBSX 100 CGS PKG 0.1 pF RSX 0.2 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters


    Original     		NE6500379A 1e-14 10e-12 5e-12 25e-12 24-Hour PDF

    nec 0882

    Abstract: GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1
    Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A nec 0882 GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1 PDF

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    NE650R279A-T1

    Abstract: NE6500379A NE650R279A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    100A5R1CP150X

    Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084 PDF