2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2SK609
Abstract: No abstract text available
Text: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY
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NE710
NE71000)
E71083
E71084
b4275E5
NE71000
NE71000L
NE71000M
2SK609
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2SK609
Abstract: NE71084 NE71000M
Text: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05
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OCR Scan
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NE710
E71000)
E71083
app48
NE71000
NE71000L
NE71000M
NE71000N
2SK609
NE71084
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ne71084
Abstract: 2SK609 2SK406 NE71000 NE710-00
Text: LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fM A x : NE710 SERIES 90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0.3 iin, Wg = 280 jrni CO T> N+ CONTACT LAYER Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY
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OCR Scan
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NE710
NE71000
NE71000L
NE71000M
NE71000N
84-SL
ne71084
2SK609
2SK406
NE710-00
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