NE856 Search Results

NE856 Price and Stock

Filter by Manufacturer


California Eastern Laboratories (CEL) NE85630-A RF TRANS NPN 12V 4.5GHZ SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE85630-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE85633-A RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE85633-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE85633L-A RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE85633L-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE85634-T1 RF TRANS NPN 12V 6.5GHZ SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE85634-T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE85630-T1-A RF TRANS NPN 12V 4.5GHZ SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE85630-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NE85630-T1-A	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NE85630-T1-A	Digi-Reel			1	1 $1.13 10 $1.13 100 $1.13 1000 $1.13 10000 $1.13	Buy Now

Find more NE856 price and stock on Findchips.com

NE856 Datasheets (98)

Part	Manufacturer	Description	Datasheet Type	PDF
NE856	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85600	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85600	NEC	NPN silicon high frequency transistor.	Original	PDF
NE85600	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85600	California Eastern Laboratories	UHF/Microwave NPN BJT	Scan	PDF
NE85600	NEC	7 GHz, 30 V, NPN silicon high frequency transistor	Scan	PDF
NE85618	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85618	NEC	Semiconductor Selection Guide	Original	PDF
NE85618-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343	Original	PDF
NE85618-T1	NEC	NPN silicon high frequency transistor.	Original	PDF
NE85618-T1	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85618-T1-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343	Original	PDF
NE85619	NEC	Semiconductor Selection Guide	Original	PDF
NE85619	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE85619-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ MINIMOLD	Original	PDF
NE85619-T1	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 1GHZ SMD	Original	PDF
NE85619-T1	NEC	NPN silicon high frequency transistor.	Original	PDF
NE85619-T1	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE85619-T1-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD	Original	PDF
NE85630	NEC	Semiconductor Selection Guide	Original	PDF

NE856 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ne85630 Abstract: 32E-16 Text: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads	Original	NE85630 6e-16 32e-16 96e-4 8e-12 1e-12 10e-12 NE85630 09e-12 16e-12	PDF
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1	PDF
2SC5614 Abstract: NE856 NE856M13 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS Units in mm FEATURES • • +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –	Original	NE856M13 NE856M13 24-Hour 2SC5614 NE856 S21E	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE856M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries	Original	NE856M03 2e-16 89e-9 32e-11 8e-12 1e-12 4e-12 56e-18 856M03 087e-12	PDF
LB 122 transistor To-92 Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)	Original	NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635	PDF
2SC3356 Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS	PDF
transistor NEC D 882 p Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A	PDF
Untitled Abstract: No abstract text available Text: NE85632 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	NE85632	PDF
Untitled Abstract: No abstract text available Text: NE85633 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	NE85633	PDF
NE85639 Abstract: No abstract text available Text: NE85639 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 6e-16 MJC 0.55 BF 120 XCJC 0.3 NF 0.98 CJS VAF 10 VJS 0.75 IKF 0.08 MJS ISE 3.2e-15	Original	NE85639 6e-16 2e-15 96e-4 8e-12 1e-12 10e-12 NE85639 087e-12 16e-12	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
Untitled Abstract: No abstract text available Text: NE85635 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)290m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	NE85635	PDF
Untitled Abstract: No abstract text available Text: NE85637 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	NE85637	PDF
2SC5649 Abstract: 2SC564 NE856 NE856M23 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height	Original	NE856M23 NE856M23 24-Hour 2SC5649 2SC564 NE856 S21E	PDF

LB 1639 Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem	PDF
OF transistor 13 Abstract: ultra low noise NPN transistor Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • PACKAGE OUTLINE S06 (Top View) SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package 2.1 ± 0.1 LOW NOISE FIGURE:	Original	UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor	PDF
transistor NEC D 882 Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION	OCR Scan	NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55	PDF
2SC3357 Abstract: 2sc3355 NE8563S Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is	OCR Scan	NE856 OT-89) 2SC3357 2sc3355 NE8563S	PDF
NE8563S Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST	OCR Scan	NE856 NE8563S 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222	PDF
ne666 Abstract: NEC NE85635 2SC33 NE85600 epitaxial micro-x 2sc4226 ka13 NE AND micro-X 2SC5011 NE856 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANOWIOTH PRODUCT: fT a 7 Q H l • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 3 5 M IC R O -X CO (C H IP )	OCR Scan	NE856 NE856C0 NE85635 20CTC NE85633 NE86635 NE8S632 ne666 NEC NE85635 2SC33 NE85600 epitaxial micro-x 2sc4226 ka13 NE AND micro-X 2SC5011	PDF
NE99532 Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563 Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de	OCR Scan	NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21 E\|2 = 9.0 dB TYP at 1 GHz •	OCR Scan	NE856 UPA810T UPA810T 810T-T1, 24-Hour	PDF
80 m03 Abstract: m03 transistor Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	NE856M03 NE856M03 NE856 80 m03 m03 transistor	PDF
TRANSISTOR nf 842 Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz	OCR Scan	NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534	PDF

Privacy Settings

NE856 Search Results

NE856 Price and Stock

California Eastern Laboratories (CEL) NE85630-A

California Eastern Laboratories (CEL) NE85633-A

California Eastern Laboratories (CEL) NE85633L-A

California Eastern Laboratories (CEL) NE85634-T1

California Eastern Laboratories (CEL) NE85630-T1-A

NE856 Datasheets (98)

NE856 Datasheets Context Search

ne85630

transistor Bf 444

2SC5614

Untitled

LB 122 transistor To-92

2SC3356

transistor NEC D 882 p

Untitled

Untitled

NE85639

transistor s11 s12 s21 s22

Untitled

Untitled

2SC5649

LB 1639

OF transistor 13

transistor NEC D 882

2SC3357

NE8563S

ne666

NE99532

Untitled

80 m03

TRANSISTOR nf 842