Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
NX5315EH
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TOSA MQW Laser diode SFP
Abstract: C11531E GR-468-CORE NX7312UA NX7313UA NX7314UA
Text: DATA SHEET LASER DIODE NX7313UA 1 310 nm FOR 1.25 Gb/s GIGABIT ETHERNET InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7313UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP
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NX7313UA
NX7313UA
GR-468-CORE
TOSA MQW Laser diode SFP
C11531E
GR-468-CORE
NX7312UA
NX7314UA
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TOSA MQW Laser diode SFP
Abstract: NX7312UA NX7313UA NX7314UA NX8310UA NX8311UD STM-16 PX10160E NEC semiconductor
Text: PRELIMINARY DATA SHEET LASER DIODE NX8310UA 1 310 nm FOR LONG HAUL 622 Mb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8310UA is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for
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NX8310UA
NX8310UA
OC-12
TOSA MQW Laser diode SFP
NX7312UA
NX7313UA
NX7314UA
NX8311UD
STM-16
PX10160E
NEC semiconductor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series
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NX6301
NX6301S
NX6301G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX7315UA 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7315UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP
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NX7315UA
NX7315UA
STM-16
OC-48
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bfy 40
Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Text: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT
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P12480EJNV0SG00
bfy 40
STM-16
STM-64
10 gb laser diode
NR8501BP
NEC SEMICONDUCTOR CATALOG
microwave product catalog
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310 thermistor
Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
Text: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical
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NX7661JB
NX7661JB
14-pin
310 thermistor
COAXIAL AUDIO ic
nec laser diode OTDR
NDL7103
NDL7113
NDL7153
NDL7163
NDL7503P
NDL7513P
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC 10 gb laser diode 600 um laser fiber medical mqw-dfb
Text: DATA SHEET LASER DIODE NX8303BG-CC,NX8303CG-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Mb/s DESCRIPTION The NX8303BG-CC and NX8303CG-CC are 1 310 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial module with single mode fiber.
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NX8303BG-CC
NX8303CG-CC
NX8303CG-CC
NX8300BE-CC
NX8300CE-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
10 gb laser diode
600 um laser fiber medical
mqw-dfb
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6311EH
NX6311EH
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GR-468-CORE
Abstract: NX7312UA NX7313UA NX7314UA TOSA
Text: DATA SHEET LASER DIODE NX7312UA 1 310 nm FOR SHORT HAUL 156 Mb/s AND 622 Mb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7312UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP
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NX7312UA
NX7312UA
OC-12
GR-468-CORE
NX7313UA
NX7314UA
TOSA
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NX7300BA-CC
Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Text: DATA SHEET LASER DIODE NX7300BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX7300BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.
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NX7300BA-CC
NX7300BA-CC
STM-16
NX7301BA-CC
NX7302BA-CC
NX7303BA-CC
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NX5302
Abstract: NX5302EH NX5302SH NX5302SI NX5302SJ NX5302SK
Text: PRELIMINARY DATA SHEET LASER DIODE NX5302 Series 1 310 nm FOR 156 Mb/s, SHORT HAUL 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5302 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short haul and
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NX5302
NX5302EH
NX5302SH
NX5302SI
NX5302SJ
NX5302SK
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Untitled
Abstract: No abstract text available
Text: NEC n P D 70208 V 40 8 /1 6-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The ^PD70208 (V40'“ ) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly used peripherals to dramatically reduce the
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PD70208
16-bit
//PD70208
The/yPD70208
/PD70108///PD70116
/dPD8086//t/PD8088
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D80C35
Abstract: 8085A hex code UPD80C35 NEC 80C48 S20PF tCy-750 NEC Electronics uPD Series tCY-25 80c48 AD-0950
Text: NEC //PD80C35/C48, n PD48 8-BIT, SINGLE-CHIP CMOS MICROCOMPUTERS NEC Electronics Inc. 40-Pin Plastic DIP c c XTAL2 c R ESET L SS c < o The //PD80C35, //PD80C48, and //PD48 are true stand alone 8 -bit microcomputers fabricated using CMOS technology. All of the functional blocks necessary for
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uPD80C35
uPD80C48
uPD48
PD80C48
64-byte
the/7PD80C35//uPD80C48
080A/8085A
/uPD80C35//iPD80C48
/PD80C35/C48,
//PD80C35/C48,
D80C35
8085A hex code
NEC 80C48
S20PF
tCy-750
NEC Electronics uPD Series
tCY-25
80c48
AD-0950
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IC3014
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA40 SERIES 1 M-WORD BY 40-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA40 is a 1 048 576 words by 40 bits dynamic RAM module on which 10 pieces of 4 M bits CMOS Dynamic RAM /{PD424400 are assembled.
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MC-421000AA40
40-BIT
uPD424400
40AA40
MC-421000AA40B,
421000AA40F
72B-50A26-1
27-ooa
IC3014
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TFK S 186 P
Abstract: tfk 138 JUPD70236 TFK S 186 TFK 162 -12 mrd 148 D70236A tfk 189 p
Text: NEC /¿PD70236A 15. ELECTRICAL SPECIFICATIONS Available Electrical Specifications - - _ _ _ _ _ V dd = 5 V ±10% V dd = 3.6 to 4.5 V V dd = 2.7 to 3.6 V Remarks 15.1 HPD70236A-10 HPD70236A-12 HPD70236A-16 HPD70236A-20 T a = -40 to +85 °C
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HPD70236A-10
HPD70236A-12
HPD70236A-16
PD70236A
HPD70236A-20
A23-A0
TFK S 186 P
tfk 138
JUPD70236
TFK S 186
TFK 162 -12
mrd 148
D70236A
tfk 189 p
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OD8311
Abstract: 8311N
Text: Preliminary OD-8311NI NEC 1310 nm SMT-LD Module 2mW OD-8311N is a new surface-mount low cost 1310 nm LD module. This module can achieve stable operation over wide temperature range of -40 to +85°C. An InGaAs PIN monitor photodiode is built in for APC (Automatic Power Control) circuit.
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OD-8311NI
OD-8311N
OD-8311N
OD8311
8311N
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OD-8310N
Abstract: No abstract text available
Text: Preliminary QD-8310N NEC 1310 nm SMT-LD Module 1mW OD-8310N is a new surface-mount low cost 1310 nm LD module. This module can achieve stable operation over wide temperature range of -40 to +85°C. An InGaAs PIN monitor photodiode is built in for APC (Automatic Power Control) circuit.
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QD-8310N
OD-8310N
OD-8306N
OD-831QN
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Untitled
Abstract: No abstract text available
Text: O OD-S 493 1310am F P - LD Mo d u 1 e with built— n optical NEC isolator FEATURES Distortion IMD2£-53dBc IMD3^-53dBc RINS-130dB/Hz Pf=1.0aV A =1310m Tc=-40 to 85 *C Noise Optical output power Wavelength Operation over vide temperature Built-in optical isolator
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1310am
-53dBc
RINS-130dB/Hz
1310m
13MHz,
19MHz,
32NHz
25MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: NEC n n - R a i i 1310m F P - L D M o d u l e O.lif OD-8344 is a high performance 13l0nm Multiple Quantum Well (MQW) LD module. This device can achieve stable operation over wide temperature range of -40 to +85 “C . An InGaAs PIN monitor photodiode is
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OD-8344
13l0nm
1310nm
OD-8344-
OD-S328B.
OD-S328B)
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Untitled
Abstract: No abstract text available
Text: NEC O D - 8 3 4 5 1310m F P - L D M o d u l e 2mW OD-8345 is a high perform ance 1310nm M ultiple Q uantum Well (MQW) LD module. This device can achieve stable operation over wide tem perature range of -40 to +85 “C . An InGaAs PIN m onitor photodiode is
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1310m
OD-8345
1310nm
1310nm
OD-8345-
OD-S328B.
OD-S328B)
bM275E5
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NDL1102
Abstract: LF50 bh27ss5 SE1003-C SE301A SE302A SE303A-C SE304 SE306 SE307-C
Text: N E C ELECTRONICS INC 30E D bH27SS5 DOSSSb? T NEC OPTOELECTRONIC DEVICES L igh t Em itting D iodes cont. Remoie Control Absolute Maximum Ratings (Ta = 2» C) Ir TYP. (f/A) (V„=3V) -65 to +125 1.2 (lp=50 mA) 0.01 50 -30 to +80 1.2 150 100 1.25 -40 to +100
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bH27SS5
SE301A
SE302A
SE303A-C
SE304
SE306
NDL5500
NDL5500C
NDL5500P
GI-50/125
NDL1102
LF50
SE1003-C
SE307-C
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6256 RAM
Abstract: nec 2601
Text: - 2 5 6 K * iä&ieffl m % it £ *C UPD41257V-15 NEC 0-70 nMOS 'f -y * > r Dyna mi c # TAH nin (ns) TP my (ns) TCAD nin (ns) nin (ns) 260 25 25 100 TRAC max (ns) TRCY 120 nin R AM ( 2 6 2 1 4 4 x 1 ) IE tt nin (ns) TDH nin (ns) TRWC min (ns) ?.m 40 310 V D D or V C C
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UPD41Z57V-15
6256 RAM
nec 2601
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u729
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /iPD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD4264400
uPD4265400
32-pin
426440Q
Q40-C
MPD4264400,
D4264400,
/1PD4264400GS-7JD,
4265400G5-7JD:
u729
D42644
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