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    NEC HETEROJUNCTION BIPOLAR TRANSISTOR Search Results

    NEC HETEROJUNCTION BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    NEC HETEROJUNCTION BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    C10535E

    Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52318 OT-343 NE52318-T1 C10535E NE52318 NE52318-T1 NPN transistor 9418 26364

    C10535E

    Abstract: NE52418 NE52418-T1
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    7415 ic pin details

    Abstract: C10535E NE52118 NE52118-T1
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52118 NE52118-T1 7415 ic pin details C10535E NE52118 NE52118-T1

    NEc hemt

    Abstract: nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
    Text: California Eastern Laboratories APPLICATION NOTE AN1039 Optimizing LNA Performance for CDMA Application Using Nonlinear Simulator ABSTRACT CDMA DESIGN CONSIDERATIONS This application note will review the process by which designers can take advantage of the latest simulation tools such as


    Original     		PDF AN1039 NEc hemt nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor

    C10535E

    Abstract: NE52318 NE52318-T1 NEC heterojunction bipolar transistor NPN transistor 9418
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    7415 ic pin details

    Abstract: d 5287 transistor C10535E NE52118 NE52118-T1 nec 2562 k 232
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    130-082

    Abstract: Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		PDF AN1022 130-082 Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812

    130-082

    Abstract: IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		PDF AN1022 24-Hour 130-082 IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    GSM home automation block diagram

    Abstract: Coin based mobile battery charger circuit diagram gsm based home security system automation circuit diagram of Zigbee Based Wireless Electron circuit diagram of GSM based home automation system mobile phone controlled street light monitoring and control system MXC300 gsm SMS BASED HOME AUTOMATION DigRF 4G MXC275-30
    Text: Seamless Mobility Wireless & Mobile Portfolio Seamless Mobility Wireless & Mobile Portfolio Pages 4–9 Table of Contents Mobile Extreme Convergence MXC Cellular Platforms Pages 10–19 i.200-20 Innovative MXC Architecture Convergence (2G) Platform MXC275-30 Platform


    Original     		PDF MXC275-30 ARM11, ARM1136, ARM920T, ARM926JF-S GSM home automation block diagram Coin based mobile battery charger circuit diagram gsm based home security system automation circuit diagram of Zigbee Based Wireless Electron circuit diagram of GSM based home automation system mobile phone controlled street light monitoring and control system MXC300 gsm SMS BASED HOME AUTOMATION DigRF 4G

    Motorola Microwave power Transistor

    Abstract: philips LED AlGaAs LM 4088 InP HBT transistor waveguide amplifier mesfet lnb OC-24 OC-768 gallium phosphide band structure GSM band selective repeater ka band gaas MESfet
    Text: 2000 ANNUAL REPORT innovation T H R fpo O U G H N fpo E W T E C fpo H N O L O G fpo Y COMPANY PROFILE ANADIGICS, Inc. is a leading supplier of radio frequency integrated circuit RFIC solutions for the rapidly growing communications industry. The Company’s products are used to transmit,


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    amplify CV 203

    Abstract: startac nec d 882 p transistor general instrument lnb Motorola Microwave power Transistor Motorola StarTac komatsu 521 PIN PHOTODIODE of wavelength 340 nanometer ericsson 3G training OC-24
    Text: RF communication solutions for wireless and broadband / 1999 Annual Report Our Markets Company Profile ANADIGICS, Inc. is a leading supplier of radio frequency “RF” /microwave integrated circuit (“RFIC”) solutions for the rapidly growing communications industry. Our products are used to transmit and receive


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    SIEMENS MICROWAVE RADIO

    Abstract: mesfet lnb raytheon downconverter Ericsson microwave commissioning ESP car stability LED light chase raytheon dbs Nortel Networks Power Amplifier MMIC 2.6 GHz 10 gb laser diode
    Text: RFIC Solutions for Broadband and Wireless Communications 010101010101101\\


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    CMOS Camera Module NOKIA

    Abstract: microtune tuner module organizational structure samsung Agilent OR Hewlett-Packard "an 942" Transceiver Broadcom 3G RF tellabs MODEM sagem shdsl Novanet Semiconductor plc lg Media and Journalism
    Text: UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K ≤ ANNUAL REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the Ñscal year ended September 30, 2000* Commission Ñle number: 000-24923 CONEXANT SYSTEMS, INC.


    Original     		PDF 10-f-2 10-f-1 CMOS Camera Module NOKIA microtune tuner module organizational structure samsung Agilent OR Hewlett-Packard "an 942" Transceiver Broadcom 3G RF tellabs MODEM sagem shdsl Novanet Semiconductor plc lg Media and Journalism

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


    Original     		PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541