gaas fet T79
Abstract: NES1821B-30
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE
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NES1821B-30
NES1821B-30
24-Hour
gaas fet T79
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NES1821P-50
Abstract: D2010
Text: 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES • • NES1821P-50 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ VDS = 10 V, ID = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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NES1821P-50
NES1821P-50
24-Hour
D2010
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PDF
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GaAs MESFET
Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain
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NES2527B-30
NES1821B-50
NE6500278
33dBm
NE650
NEL2000
NEZ5964
NE850
GaAs MESFET
MESFET
NEZ1011
NEZ1414
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POUT36
Abstract: NES1821B-30 p1209
Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3
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NES1821B-30
NES1821B-30
POUT36
p1209
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610-150
Abstract: nec d 1590 NES1821P-50
Text: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear
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NES1821P-50
NES1821P-50
610-150
nec d 1590
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PDF
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ne6500278
Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Text: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL
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NEZ4450-15D/15DL
NES1821P-50
NES1821B-30
NEZ5964-15D/15DL
NES2527B-30
NEZ6472-15D/15DL
NEZ3642-15D/15DL
NEZ7785-15D/15DL
NEZ7177-8D/8DL
NEZ3642-8D
ne6500278
NEZ1414
NES2527B-30
NE1280100
NE6501077
NE85001
NE850R5
NES1821B-30
NES1821P-50
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PDF
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NES1821B-30
Abstract: gaas fet T79 d3125
Text: 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE • PARTIALLY MATCHED
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NES1821B-30
NES1821B-30
st163
24-Hour
gaas fet T79
d3125
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nec k 813
Abstract: NES1821P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1821P-30
NES1821P-30
nec k 813
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micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
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PDF
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NES1821B-30
Abstract: NEC D 809 F
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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X13769XJ2V0CD00
PC8119T
PC8120T
PC8130TA
PC8131TA
PG175TA
PC2723T
PC3206GR
PC2748
PC2745
2SK2396
PC2763
pc1658
ne27283
2SC3545
2SC3357
2sc2757
ne93239
2SC2570A
PC2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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PD43256A>
PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD16305
uPD63724A
upc5024
UPC5023
2SC1940
uPC1237
uPD65656
UPC458
UPC2710
UPD65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW
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NES1821P-50
NES1821P-50
1821P
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ES1821
Abstract: M 0737
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED
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OCR Scan
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NES1821
1821B-30
ES1821
M 0737
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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OCR Scan
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NES1821P-30
NES1821P-30
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PDF
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nec 0882
Abstract: NEC 1601 fet nec 0882 p
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear
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OCR Scan
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NES1821P-50
NES1821P-50
nec 0882
NEC 1601 fet
nec 0882 p
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PDF
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NEC D 809 F
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input
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OCR Scan
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NES1821B-30
NES1821B-30
NEC D 809 F
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 82 1B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.8-2.1
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OCR Scan
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NES1821B-30
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ Units in mm • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • PARTIALLY MATCHED
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OCR Scan
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NES1821B-30
24-Hour
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES_ • • • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ V ds = 10 V, Id = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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OCR Scan
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NES1821P-50
NES1821P-50
anywhere2-59
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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OCR Scan
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NES1821P-50
NES1821P-50
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PDF
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gaas fet T79
Abstract: ES182
Text: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY
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OCR Scan
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NE81K1M0
ES1821B-30
24-Hour
gaas fet T79
ES182
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PDF
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