NESM250 Search Results

NESM250 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
NESM250	New England Semiconductor	TRANS MOSFET N-CH 200V 27A 3TO-254Z	Scan	PDF
NESM250	New England Semiconductor	POWER MOSFET N CHANNEL	Scan	PDF
NESM250Z	New England Semiconductor	TRANS MOSFET N-CH 200V 27A 3TO-254Z	Scan	PDF
NESM250Z	New England Semiconductor	POWER MOSFET N CHANNEL	Scan	PDF

NESM250 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CP666 Abstract: CP640 TO-213AA CP664 Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100	Original	PDF	O-213AA/66 CP666 CP640 TO-213AA CP664
Untitled Abstract: No abstract text available Text: Back to FETs NESM250 NESM250Z POWER MOSFET N CHANNEL • 27 AMPERE REPETITIVE AVALANCHE RATINGS 200 VOLTS Tff LOW RDS on LOW DRIVE REQUIREMENT 0.085 Q TO-254Z DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted)	OCR Scan	PDF	NESM250 NESM250Z O-254Z
NESM250 Abstract: NESM250Z Text: 0 /V EF ^ IP NESM250 NESM250Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL 27 AMPERE • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT 200 VOLTS III 0.085 Q T O -2 5 4 Z • DYNAM IC d v / d t RATING ABSOLUTE M A X IM U M RA TIN G S (T c = 25°C unless otherw ise noted)	OCR Scan	PDF	NESM250 NESM250Z O-254Z NESM250Z

Catalog Datasheet

MFG & Type

PDF

Document Tags

CP666

Abstract: CP640 TO-213AA CP664
Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100

Original

PDF

O-213AA/66 CP666 CP640 TO-213AA CP664

Untitled

Abstract: No abstract text available
Text: Back to FETs NESM250 NESM250Z POWER MOSFET N CHANNEL • 27 AMPERE REPETITIVE AVALANCHE RATINGS 200 VOLTS Tff LOW RDS on LOW DRIVE REQUIREMENT 0.085 Q TO-254Z DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted)

OCR Scan

PDF

NESM250 NESM250Z O-254Z

NESM250

Abstract: NESM250Z
Text: 0 /V EF ^ IP NESM250 NESM250Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL 27 AMPERE • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT 200 VOLTS III 0.085 Q T O -2 5 4 Z • DYNAM IC d v / d t RATING ABSOLUTE M A X IM U M RA TIN G S (T c = 25°C unless otherw ise noted)