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    NEWMARKET TRANSISTOR Search Results

    NEWMARKET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEWMARKET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Newmarket Transistors

    Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


    Original     		PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123

    2SD1164-Z

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SD1164-Z R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000


    Original     		PDF 2SD1164-Z R07DS0254EJ0400 2SD1164-Z Pow9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SD1164-Z R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000


    Original     		PDF 2SD1164-Z R07DS0254EJ0400 2SD1164-Z To9044

    2SA1646

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,


    Original     		PDF 2SA1646 2SA1646-Z R07DS0048EJ0200

    2N2458

    Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec


    Original     		PDF

    2SA1646

    Abstract: 2SA1646-Z NEW TRANSISTOR
    Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,


    Original     		PDF 2SA1646 2SA1646-Z R07DS0048EJ0200 2SA1646-Z NEW TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0801S R07DS0729EJ0100 Rev.1.00 May 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801R. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0801S R07DS0729EJ0100 N0801R. OT-23F 2SD1005: N0801S-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    N0201

    Abstract: No abstract text available
    Text: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0201R R07DS0718EJ0100 N0201S. OT-23F 2SB798: N0201R-T1-AT 3000p/reel PVSF0003ZA-A 0126g N0201

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0501R R07DS0724EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501S. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0501R R07DS0724EJ0100 N0501S. OT-23F 2SB1115: N0501R-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0500R R07DS0722EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500S. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SB799: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0500R R07DS0722EJ0100 N0500S. OT-23F 2SB799: N0500R-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    n0501

    Abstract: No abstract text available
    Text: Data Sheet N0501S R07DS0725EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501R. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0501S R07DS0725EJ0100 N0501R. OT-23F 2SD1615: N0501S-T1-AT 3000p/reel PVSF0003ZA-A 0126g n0501

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0202R R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0202S. VCEO = 20 V IC DC = 2.0 A Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0202R R07DS0720EJ0100 N0202S. OT-23F 2SB1114: N0202R-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0800R R07DS0726EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800S. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SB800: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0800R R07DS0726EJ0100 N0800S. OT-23F 2SB800: N0800R-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0800S R07DS0727EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800R. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0800S R07DS0727EJ0100 N0800R. OT-23F 2SD1005: N0800S-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0801S R07DS0729EJ0100 Rev.1.00 May 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801R. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0801S R07DS0729EJ0100 N0801R. OT-23F 2SD1005: N0801S-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    N-0202

    Abstract: No abstract text available
    Text: Data Sheet N0202R R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0202S. VCEO = 20 V IC DC = 2.0 A Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0202R R07DS0720EJ0100 N0202S. OT-23F 2SB1114: N0202R-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g N-0202

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0500S R07DS0723EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500R. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0500S R07DS0723EJ0100 N0500R. OT-23F 2SD1000: N0500S-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    N0201

    Abstract: No abstract text available
    Text: Data Sheet N0201S R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201R. VCEO = 30 V IC DC = 1.0 A Miniature package SOT-23F (2SD999: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201S-T1-AT


    Original     		PDF N0201S R07DS0719EJ0100 N0201R. OT-23F 2SD999: N0201S-T1-AT 3000p/reel PVSF0003ZA-A 0126g N0201

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0501S R07DS0725EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501R. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0501S R07DS0725EJ0100 N0501R. OT-23F 2SD1615: N0501S-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0800S R07DS0727EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800R. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0800S R07DS0727EJ0100 N0800R. OT-23F 2SD1005: N0800S-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0500S R07DS0723EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500R. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		PDF N0500S R07DS0723EJ0100 N0500R. OT-23F 2SD1000: N0500S-T1-AT 3000p/reel PVSF0003ZA-A 0126g

    Cv7003

    Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
    Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm


    OCR Scan     		PDF 2772SC 7726A 27727X. 34768X GET103 31419X BS9300-C084) 31428H GET116 31420B Cv7003 Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


    OCR Scan     		PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


    OCR Scan     		PDF