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    NEWMARKET TRANSISTORS Search Results

    NEWMARKET TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEWMARKET TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Newmarket Transistors

    Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


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    PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123

    2N2458

    Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec


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    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2631T1R R07DS0991EJ0101 PA2631T1R 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2670T1R R07DS0833EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –20 V, –3.0 A, 79 mΩ Description The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2670T1R R07DS0833EJ0101 PA2670T1R 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 –30 V, –85 A, 2.8 mΩ Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = −30 V TA = 25°C


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    PDF PA2739T1A R07DS0885EJ0102 PA2739T1A PA2739T1A-E2-AYâ

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    Abstract: No abstract text available
    Text: Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS on = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )


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    PDF N0439N R07DS1065EJ0100 O-220 N0439N-S19-AY

    PA2660T1R

    Abstract: No abstract text available
    Text: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2660T1R PA2660T1R R07DS0999EJ0100 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2630T1R R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ Description The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2630T1R PA2630T1R R07DS0990EJ0100 6pinHUSON2020 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2672T1R R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2672T1R R07DS0834EJ0101 PA2672T1R 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –20 V, –8.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2631T1R PA2631T1R R07DS0991EJ0100 6pinHUSON2020 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2600T1R PA2600T1R R07DS0998EJ0100 6pinHUSON2020 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0101 Rev.1.01 Sep 04, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PDF PA2600T1R R07DS0998EJ0101 PA2600T1R 6pinHUSON2020

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP89N055MUK, NP89N055NUK R07DS0600EJ0100 AEC-Q101 NP89N055MUK-S18-AY O-220 MP-25K) NP89N055NUK-S18-AY O-262 MP-25SK)

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 Rev.1.00 Feb 21, 2013 40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP90N04VDK R07DS1017EJ0100 NP90N04VDK AEC-Q101 NP90N04VDK-E1-AY NP90N04VDK-E2-AY O-252

    NP45N06PUK

    Abstract: NP45N06VUK
    Text: Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ0100 Rev.1.00 Nov 20, 2012 60 V – 45 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP45N06VUK, NP45N06PUK R07DS0953EJ0100 AEC-Q101 NP45N06VUK-E1-AY NP45N06VUK-E2-AY NP45N06PUK-E1-AY NP45N06PUK-E2-AY O-252 NP45N06PUK NP45N06VUK

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP90N055MUK, NP90N055NUK R07DS0602EJ0100 AEC-Q101 NP90N055MUK-S18-AY O-220 MP-25K) NP90N055NUK-S18-AY O-262 MP-25SK)

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP89N04MUK, NP89N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0599EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP89N04MUK, NP89N04NUK R07DS0599EJ0100 AEC-Q101 NP89N04MUK-S18-AY O-220 MP-25K) NP89N04NUK-S18-AY O-262 MP-25SK)

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N055YUK R07DS1005EJ0100 Rev.1.00 Feb 08, 2013 55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP75N055YUK R07DS1005EJ0100 NP75N055YUK AEC-Q101 NP75N055YUK-E1-AY NP75N055YUK-E2-AY

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N04YUK R07DS1004EJ0100 Rev.1.00 Feb 08, 2013 40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP75N04YUK R07DS1004EJ0100 NP75N04YUK AEC-Q101 NP75N04YUK-E1-AY NP75N04YUK-E2-AY

    np90n04muk

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N04MUK, NP90N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0601EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP90N04MUK, NP90N04NUK R07DS0601EJ0100 AEC-Q101 NP90N04MUK-S18-AY NP90N04NUK-S18-AY O-220 MP-25K) O-262 MP-25SK) np90n04muk

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 40 V – 50 A – N-channel Power MOS FET Application: Automotive Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP50N04YUK R07DS1003EJ0100 NP50N04YUK AEC-Q101 NP50N04YUK-E1-AY NP50N04YUK-E2-AY

    Cv7003

    Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
    Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm


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    PDF 2772SC 7726A 27727X. 34768X GET103 31419X BS9300-C084) 31428H GET116 31420B Cv7003 Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


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    PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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