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Taitien Electronics Co Ltd PYKTDCJANF-74.250000 XTAL OSC XO 74.2500MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PYKTDCJANF-74.250000	Reel			200	1 - 10 - 100 - 1000 $1.566 10000 $1.566	Buy Now
Panasonic Electronic Components ERJ-6ENF2742V Thick Film Resistors - SMD 0805 27.4Kohms 1% AEC-Q200
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Mouser Electronics	ERJ-6ENF2742V		70,609			1 $0.11 10 $0.034 100 $0.02 1000 $0.018 10000 $0.011	Buy Now
Panasonic Electronic Components ERJ-8ENF3742V Thick Film Resistors - SMD 1206 37.4Kohms 1% AEC-Q200
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Mouser Electronics	ERJ-8ENF3742V		54,539			1 $0.1 10 $0.033 100 $0.023 1000 $0.018 10000 $0.016	Buy Now
Panasonic Electronic Components ERJ-8ENF1742V Thick Film Resistors - SMD 1206 17.4Kohms 1% AEC-Q200
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Mouser Electronics	ERJ-8ENF1742V		50,089			1 $0.17 10 $0.058 100 $0.035 1000 $0.031 10000 $0.015	Buy Now
Panasonic Electronic Components ERJ-6ENF1742V Thick Film Resistors - SMD 0805 17.4Kohms 1% AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ERJ-6ENF1742V		49,240			1 $0.11 10 $0.035 100 $0.021 1000 $0.018 10000 $0.01	Buy Now

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NF 742 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nf 742 Abstract: 680/nf 742 Text: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330	Original	PDF
Untitled Abstract: No abstract text available Text: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 10-1200 24 ±1.50	Original	PDF	ZFL-1000GH
npn UHF transistor 2N5179 Abstract: No abstract text available Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters	Original	PDF	2N5179 npn UHF transistor 2N5179
Untitled Abstract: No abstract text available Text: plerowTM APM0742-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.9 dB @ 698 MHz = 33.1 dB @ 787 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in	Original	PDF	APM0742-P29 40x40mm 10x10mm) APM0742
2N5179 Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	PDF	2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	PDF	2N5179 2N5179
LB 1639 Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236 Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz	Original	PDF	UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
LFCSP Abstract: jc212 Text: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain	Original	PDF	ADL5565 ADL5565ACPZ-R7 ADL5565-EVALZ 1-26-2012-A 16-Lead CP-16-27 ADL5565 D09959-0-6/12 LFCSP jc212
2N5179 Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	PDF	2N5179 MSC1305 2N5179 ic 741 datasheet pdf of 741 ic IC 741 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
2N5179 Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	PDF	2N5179 2N5179 transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
jc212 Abstract: No abstract text available Text: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain	Original	PDF	ADL5565 ADL5565ACPZ-R7 ADL5565-EVALZ 16-Lead 1-26-2012-A CP-16-27 ADL5565 D09959-0-4/12 jc212
Untitled Abstract: No abstract text available Text: plerowTM ALN0742WT Internally Matched LNA Module Features Description • S21 = 19.5 dB @ 698 MHz = 18.5 dB @ 787 MHz · NF of 0.70 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er The plerowTM ALN-series is the compactly designed surface-mount	Original	PDF	ALN0742WT 25x25mm 10x10mm)
Untitled Abstract: No abstract text available Text: plerowTM APM0743-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 50.6 dB @ 698 MHz = 49.4 dB @ 787 MHz · NF of 1.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply	Original	PDF	APM0743-P29 40x40mm 13x13mm) APM0743
LB 1639 Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	PDF	UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem

Untitled Abstract: No abstract text available Text: FUNCTIONAL BLOCK DIAGRAM FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain	Original	PDF	16-Lead CP-16-27) ADL5565ACPZ-R7 ADL5565-EVALZ CP-16-27 ADL5565 D09959-0-6/12
Untitled Abstract: No abstract text available Text: plerowTM ALN0742 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount	Original	PDF	ALN0742 25x25mm 13x13mm)
Untitled Abstract: No abstract text available Text: plerowTM ALN0742AT Internally Matched LNA Module Features Description • S21 = 19.2 dB @ 698 MHz = 18.8 dB @ 787 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount	Original	PDF	ALN0742AT 25x25mm 10x10mm)
Untitled Abstract: No abstract text available Text: Mini-Circuits - Specification for Amplifier - ZHL-2-12 Amplifier print this page ZHL-2-12 Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Min. Input no damage NF dB Typ. 10-1200 24 ±1.00 +29.00 +10.00 4.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)	Original	PDF	ZHL-2-12
Untitled Abstract: No abstract text available Text: plerowTM ALN0743 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.7 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount	Original	PDF	ALN0743 25x25mm 13x13mm)
C635 Abstract: T1EB UCA0 C634 BCX73 Text: NPISI-Transistoren für NF-Treiber- und Endstufen B CX 73 B CX 74 BCX 73 und BCX 74sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnlich S O T -3 0 . Die Transistoren sind für den Einsatz in NF-Treiber- und Endstufen, sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu	OCR Scan	PDF	74sind OT-30) Q62702- -C634- -C635- C635 T1EB UCA0 C634 BCX73
Untitled Abstract: No abstract text available Text: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	PDF	O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
TRANSISTOR nf 842 Abstract: D 843 Transistor transistor su 312 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:	OCR Scan	PDF	NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312
Untitled Abstract: No abstract text available Text: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 \|xf to 330 nf	OCR Scan	PDF	QC300801/US0001, NMCOS012
TRANSISTOR nf 842 Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz	OCR Scan	PDF	NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534

NF 742 Search Results

NF 742 Price and Stock

Taitien Electronics Co Ltd PYKTDCJANF-74.250000

Panasonic Electronic Components ERJ-6ENF2742V

Panasonic Electronic Components ERJ-8ENF3742V

Panasonic Electronic Components ERJ-8ENF1742V

Panasonic Electronic Components ERJ-6ENF1742V

NF 742 Datasheets Context Search

nf 742

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npn UHF transistor 2N5179

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2N5179

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LB 1639

LFCSP

2N5179

2N5179

jc212

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LB 1639

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C635

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TRANSISTOR nf 842

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TRANSISTOR nf 842