NF C4 NPN Search Results

NF C4 NPN Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NF C4 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ic ma 8910 Abstract: 2SC4319 Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, \|S2iç\|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC4319 S21el2 Coll53 ic ma 8910 2SC4319	PDF
Transistor W03 Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high	Original	AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor	PDF
JOHANSON 2951 Abstract: Stackpole ferrite 2N5943 equivalent wound trifilar 10 turns l4 transistor CM5943 trifilar 2N5943 TRANSISTOR NPN c4 nf Text: CM5943 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the	Original	CM5943 CM5943 2N5943. JOHANSON 2951 Stackpole ferrite 2N5943 equivalent wound trifilar 10 turns l4 transistor trifilar 2N5943 TRANSISTOR NPN c4 nf	PDF
11Z4 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics	Original	MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4	PDF
MRF587 Abstract: CT050 Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.	Original	MRF587/D MRF587 MRF587 CT050	PDF
capacitor ase 104 Abstract: Z808 w188 trimm resistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.	OCR Scan	MRF6404 DCS1800 1900/Cellular MRF6404K Collector-E100A MRF6404K capacitor ase 104 Z808 w188 trimm resistor	PDF
2SC4402 Abstract: 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2 Text: 注文コード No. N 2 7 5 5 2SC4402 No. N 2 7 5 5 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4402 VHF / UHF 周波数混合 , 局部発振 , 低電圧用用途・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。	Original	2SC4402 S21e2 2SC440 --j10 --j250 --j200 --j150 --j100 --j25 2SC4402 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2	PDF
2SC4364 Abstract: 2SC4401 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2 Text: 注文コード No. N 2 7 5 4 2SC4401 No. N 2 7 5 4 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4401 VHF / UHF 周波数混合 , 局部発振 , 低電圧用用途・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。	Original	2SC4401 S21e2 2SC4401 --j10 --j250 --j200 --j150 --j50 ITR06714 2SC4364 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2	PDF
transistor A144 Abstract: a144 transistor Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.	Original	MRF587/D MRF587 Collecto51 transistor A144 a144 transistor	PDF
2222A Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR Text: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.	Original	AT-33225 OT-223 AT-33225 5965-5910E 2222A AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR	PDF
AT-33225 Abstract: AT-33225-TR1 transistor 2222a MSOP-3 Text: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.	Original	AT-33225 OT-223 AT-33225 AT-33225-TR1 transistor 2222a MSOP-3	PDF
CBC 184 transistor Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1 Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,	Original	AT-31625 OT-223 AT-31625 5965-5911E CBC 184 transistor CBC 184 c transistor transistor 2222a data sheet AT-31625-BLK AT-31625-TR1	PDF
CBC 184 transistor Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1 Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,	Original	AT-31625 OT-223 AT-31625 CBC 184 transistor TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625-TR1 transistor 2222a 96t1	PDF
J1 3007-1 Abstract: IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658 Text: 注文コード No. N 3 0 0 7 2SC4365 No. N 3 0 0 7 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4365 特長 VHF. UHF / MIX. OSC. 低電圧高周波増幅用・低電圧動作：fT=3.0GHz typ（VCE=3V）。：MAG=12dB typ（VCE=3V, IC=10mA）。	Original	2SC4365 S21e2 2018B J1 3007-1 IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658	PDF

MRF587 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.	Original	MRF587/D MRF587 MRF587/D* MRF587	PDF
MRF587 Abstract: HP8542 mrf587d Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.	Original	MRF587/D MRF587 MRF587/D* MRF587 HP8542 mrf587d	PDF
ic 4570 Abstract: 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651 Text: 注文コード No. N 3 0 0 8 2SC4364 No. N 3 0 0 8 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4364 VHF. UHF / MIX. OSC. 低電圧高周波増幅用特長・低電圧動作：fT=3.0GHz typ（VCE=3V）。：MAG=11dB typ（VCE=3V, IC=3mA）	Original	2SC4364 S21e2 ic 4570 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651	PDF
TRANSISTOR A331 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to	Original	MRF6404/D MRF6404 DCS1800 PCS1900/Cellular MRF6404 MRF6404/D TRANSISTOR A331	PDF
TRANSISTOR A331 Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to	Original	MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC	PDF
capacitor 104 Z5 Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to	Original	MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4401] · Low-voltage operation	Original	ENN2754 2SC4401 2059B 2SC4401] 2SC4401applied	PDF
2SC3776 Abstract: ITR05953 ITR05954 ITR05955 ITR05956 ITR05957 ITR05958 ITR05959 ITR05960 Text: 注文コード No. N 1 9 4 9 B 2SC3776 No. N 1 9 4 9 B 30600 * 半導体ニューズ No.1949（TR データブック No.1949A）とさしかえてください。 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC3776 UHF, 発振 , 混合 ,	Original	2SC3776 1949TR --j250 --j200 --j150 --j100 --j25 --j50 2SC3776 ITR05953 ITR05954 ITR05955 ITR05956 ITR05957 ITR05958 ITR05959 ITR05960	PDF
2SC3772 Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 ITR06734 ITR06735 ITR06736 Text: 注文コード No. N 2 7 5 6 2SC4403 No. N 2 7 5 6 30600 2SC4403 NPN エピタキシァルプレーナ形シリコントランジスタ VHF / UHF 局部発振用用途・VHF / UHF, OSC 用。特長・しゃ断周波数が高い：fT=3.0GHz typ。・電力利得が大きい	Original	2SC4403 S21e2 2SC4403 --j100 --j25 --j50 ITR06737 200MHz ITR06738 2SC3772 ITR06730 ITR06731 ITR06732 ITR06733 ITR06734 ITR06735 ITR06736	PDF
1951A Abstract: 2SC3778 ITR05975 ITR05976 ITR05977 ITR05978 ITR05979 ITR05980 ITR05981 ITR05982 Text: 注文コード No. N 1 9 5 1 B 2SC3778 No. N 1 9 5 1 B 30600 * 半導体ニューズ No.1951（TR データブック No.1951A）とさしかえてください。 2SC3778 NPN エピタキシァルプレーナ形シリコントランジスタ UHF, 低雑音広帯域増幅用	Original	2SC3778 1951TR 2004B --j250 --j200 --j150 --j10 --j100 1951A 2SC3778 ITR05975 ITR05976 ITR05977 ITR05978 ITR05979 ITR05980 ITR05981 ITR05982	PDF

NF C4 NPN Search Results

NF C4 NPN Result Highlights (5)

NF C4 NPN Datasheets Context Search

ic ma 8910

Transistor W03

JOHANSON 2951

11Z4

MRF587

capacitor ase 104

2SC4402

2SC4364

transistor A144

2222A

AT-33225

CBC 184 transistor

CBC 184 transistor

J1 3007-1

MRF587

MRF587

ic 4570

TRANSISTOR A331

TRANSISTOR A331

capacitor 104 Z5

Untitled

2SC3776

2SC3772

1951A