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    NGB8204NT4G Search Results

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    NGB8204NT4G Price and Stock

    onsemi NGB8204NT4G

    IGBT 430V 18A 115W D2PAK
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    DigiKey NGB8204NT4G Reel 800
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    NGB8204NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGB8204NT4G On Semiconductor Ignition IGBT 18 Amps, 400 Volts Original PDF

    NGB8204NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G PDF

    Untitled

    Abstract: No abstract text available
    Text: NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8204N, NGB8204AN NGB8204N/D PDF

    8204NG

    Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8204N NGB8204N/D 8204NG GB8204N NGB8204N NGB8204NT4 NGB8204NT4G PDF

    8204NG

    Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8204N NGB8204N/D 8204NG GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG PDF

    Untitled

    Abstract: No abstract text available
    Text: NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8204N, NGB8204AN NGB8204N/D PDF