NGB8206NT4G Search Results

NGB8206NT4G Price and Stock

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Rochester Electronics LLC NGB8206NT4G INSULATED GATE BIPOLAR TRANSISTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NT4G	Bulk			254	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Littelfuse Inc NGB8206NT4G IGBT 390V 20A D2PAK
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DigiKey	NGB8206NT4G	Reel			800	1 - 10 - 100 - 1000 $0.91564 10000 $0.875	Buy Now
onsemi NGB8206NT4G Trans IGBT Chip N-CH 390V 20A 150000mW 3-Pin(2+Tab) D2PAK T/R
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Verical	NGB8206NT4G		892		281	1 - 10 - 100 - 1000 $1.2113 10000 $1.2113	Buy Now
Rochester Electronics	NGB8206NT4G		892		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now
ComSIT USA	NGB8206NT4G		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NGB8206NT4G Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGB8206NT4G		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK		Original	PDF
NGB8206NT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor		Original	PDF

NGB8206NT4G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
418B-04 Abstract: GB8206 Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206	PDF
8206NG Abstract: NGB8206 Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D 8206NG NGB8206	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G	PDF
Untitled Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D	PDF
GB8206 Abstract: NGB8206A NGB8206NG Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG	PDF
GB8206 Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206	PDF
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G	PDF