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    NGD8205NT4G Price and Stock

    Rochester Electronics LLC NGD8205NT4G

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4G Bulk 296
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    onsemi NGD8205NT4G

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4G Reel 2,500
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    Verical NGD8205NT4G 87,296 328
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    Rochester Electronics NGD8205NT4G 87,296 1
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    ComSIT USA NGD8205NT4G 250
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    NGD8205NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGD8205NT4G On Semiconductor TRANS IGBT CHIP N-CH 390V 20A 3DPAK T/R Original PDF

    NGD8205NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGD8205N, NGD8205AN NGD8205N/D PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G PDF

    NGD8205NT4G

    Abstract: No abstract text available
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGD8205N, NGD8205AN NGD8205N/D NGD8205NT4G PDF

    NGD8205AN

    Abstract: NGD8205A
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGD8205N, NGD8205AN NGD8205N/D NGD8205A PDF

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF