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    NGTB20N120IHLWG Datasheets (1)

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    NGTB20N120IHLWG On Semiconductor NGTB20 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB20N120IHLWG NGTB20N120IHL/D PDF

    20N120IHL

    Abstract: NGTB20N120IHLWG 20n12 20N120
    Text: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL 20n12 20N120 PDF

    20N120IHL

    Abstract: ngtb20n120
    Text: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL ngtb20n120 PDF