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    NGTB25N120IHLWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB25N120IHLWG On Semiconductor NGTB25 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

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    Abstract: No abstract text available
    Text: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120IHLWG NGTB25N120IHLW/D

    25N120IHL

    Abstract: NGTB25N120IHLWG NGTB25N120IHL 067147
    Text: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N120IHL 067147

    25N120IHL

    Abstract: NGTB25N 3842IC
    Text: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N 3842IC