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    onsemi NGTB30N60IHLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    Verical NGTB30N60IHLWG 5,700 142
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    Rochester Electronics NGTB30N60IHLWG 5,700 1
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    EBV Elektronik NGTB30N60IHLWG 143 Weeks 30
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    Rochester Electronics LLC NGTB30N60IHLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    DigiKey NGTB30N60IHLWG Tube 129
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    NGTB30N60IHLWG Datasheets (1)

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    NGTB30N60IHLWG On Semiconductor NGTB30N60 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

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    NGTB30N60IHLWG

    Abstract: No abstract text available
    Text: NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB30N60IHLWG NGTB30N60IHLW/D PDF

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    Abstract: No abstract text available
    Text: Product Overview NGTB30N60IHLWG: IGBT 600V 30A Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides


    Original     		NGTB30N60IHLWG: NGTB30N60IHLWG O-247-3 PDF