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    NGTG15N60S1EG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTG15N60S1EG On Semiconductor NGTG15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

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    G15N60S1G

    Abstract: No abstract text available
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G

    G15N60

    Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8

    G15N60

    Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1

    G15N60S1G

    Abstract: No abstract text available
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G

    G15N60

    Abstract: NGTG15N60 G15N60S1G
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G