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    NMOS MODEL PARAMETERS SPICE Search Results

    NMOS MODEL PARAMETERS SPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D8087-1 Rochester Electronics LLC Math Coprocessor, 16-Bit, NMOS, CDIP40, CERDIP-40 Visit Rochester Electronics LLC Buy
    P8251A-G Rochester Electronics LLC P8251A - Serial I/O Controller, NMOS Visit Rochester Electronics LLC Buy
    P8085AH-2-G Rochester Electronics LLC P8085 - Microprocessor, 8-Bit, 5MHz, NMOS, PDIP40 Visit Rochester Electronics LLC Buy
    D8031AH Rochester Electronics LLC Microcontroller, 8-Bit, 6MHz, NMOS, CDIP40, CERDIP-40 Visit Rochester Electronics LLC Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy

    NMOS MODEL PARAMETERS SPICE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN1403

    Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX
    Text: AN1403 Application Note  I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic


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    AN1403 AN1403/D BR1333 AN1403 NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX PDF

    74ACxxx

    Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
    Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect


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    AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25 PDF

    BUZ12

    Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
    Text: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor


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    compon99 BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A PDF

    BSP149 equivalent

    Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
    Text: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it


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    4e16

    Abstract: 25e5 4E-16
    Text: AND8050/D SPICE Device Model NTHS5402T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


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    AND8050/D NTHS5402T1 r14525 AND8050/D 4e16 25e5 4E-16 PDF

    eta mos

    Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4
    Text: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


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    AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4 PDF

    Kappa Networks

    Abstract: 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE
    Text: AND8048/D SPICE Device Model NTHD5905T1 Dual P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


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    AND8048/D NTHD5905T1 r14525 Kappa Networks 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE PDF

    Kappa Networks

    Abstract: Si5445DC 1100E 135E
    Text: AND8049/D SPICE Device Model NTHS55445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


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    AND8049/D NTHS55445T1 r14525 Kappa Networks Si5445DC 1100E 135E PDF

    25e5

    Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3
    Text: AND8050/D SPICE Device Model NTHS55445T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


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    AND8050/D NTHS55445T1 r14525 25e5 NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3 PDF

    Kappa Networks

    Abstract: 110E 7E17 NTHD5902T1 Si5902DC
    Text: AND8051/D SPICE Device Model NTHD5902T1 Dual N–Channel 30 V D–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The


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    AND8051/D NTHD5902T1 r14525 Kappa Networks 110E 7E17 NTHD5902T1 Si5902DC PDF

    nmos transistor

    Abstract: NMOS MODEL PARAMETERS SPICE SPICE MODELS GAP2
    Text: SPICE Models  October 1995 Mitel Semiconductor has been using for several years SPICE parameters for internal IC Design. For Custom Silicon Wafer Foundry, we are now offering expanded services with State-of-the-Art Hardware and Software Data extraction.


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    980e-09 453e-07 17ransistor: 178e-07 127e-10 233e-08 50e-03 nmos transistor NMOS MODEL PARAMETERS SPICE SPICE MODELS GAP2 PDF

    Kappa Networks

    Abstract: 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3
    Text: AND8047/D SPICE Device Model NTHD5904T1 Dual N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The


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    AND8047/D NTHD5904T1 r14525 Kappa Networks 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3 PDF

    NMOS MODEL PARAMETERS SPICE

    Abstract: nmos transistor SPICE MODELS 03 transistor 03222
    Text: SPICE Models  June 1995 Mitel Semiconductor has been using for several years SPICE parameters for internal IC Design. For Custom Silicon Wafer Foundry, we are now offering expanded services with State-of-the-Art Hardware and Software Data extraction. Available Models:


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    980e-09 453e-07 178e-07 127e-10 233e-08 50e-03 793e-04 NMOS MODEL PARAMETERS SPICE nmos transistor SPICE MODELS 03 transistor 03222 PDF

    Dell Latitude csx

    Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan eLED ORCAD PSPICE BOOK FDP038AN06A0 FDP038AN08A0 AN-7510
    Text: Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This


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    spice model solid state relay

    Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model
    Text: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.


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    Si4768CY includ-May-04 12-May-04 spice model solid state relay solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model PDF

    swhyste

    Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
    Text: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.


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    Si4770CY 18-Jul-08 swhyste TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE PDF

    MITEL SEMICONDUCTOR

    Abstract: all transistor mitel st 9701 NMOS MODEL PARAMETERS SPICE
    Text: SPICE MODELS Mitel Semiconductor has been using for several years SPICE parameters for internal IC Design. For Custom Silicon Wafer Foundry, we are now offering expanded services with State-of -the Art Hardware and Software Data extraction Available Models:


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    980e-09 453e-07 178e-07 127e-10 233e-ability MITEL SEMICONDUCTOR all transistor mitel st 9701 NMOS MODEL PARAMETERS SPICE PDF

    G2-20P

    Abstract: delta rectifier all model AN1043 Si4724CY llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high-speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


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    Si4724CY 18-Jul-08 G2-20P delta rectifier all model AN1043 llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL PDF

    CMOS spice model

    Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library PDF

    mosfet SPICE MODEL

    Abstract: G2-20P Si4724CY 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


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    Si4724CY 545u/4u) AN1043, 23-Jan-04 mosfet SPICE MODEL G2-20P 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22 PDF

    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 PDF

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


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    XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model PDF

    bsim3 0.18 micron parameters

    Abstract: bsim3 model ESSDERC-98
    Text: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: andries.scholten@philips.com


    OCR Scan
    464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98 PDF