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    NNCD11E Search Results

    NNCD11E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NNCD11E NEC Electrostatic Discharge Noise Clipping Diode (200 mW Type) Original PDF
    NNCD11E-A NEC DIODE TVS SINGLE UNI-DIR 8V 100W 3SC-59 Original PDF

    NNCD11E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C10535J

    Abstract: C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF 3ENNCD12E IEC1000-4-230 SC-59EIAJ 108-0171NEC 46017NEC 54024NEC C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E

    IEC1000

    Abstract: IEC1000-42 IEC1000-4-2 NNCD10E NNCD11E NNCD12E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    smd diode 74a

    Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
    Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation


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    PDF IEC1000-4-2 D11663EJ4V0PF00 smd diode 74a uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915

    NNCD3.3E

    Abstract: C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E TF-128
    Text: データ・シート 静電気ノイズクリッピングダイオード NNCD3.3E~NNCD12E ESD ノイズクリッピング・ダイオード(200 mWタイプ) 本製品シリーズは,ESDノイズ保護用に開発したダイオードで 外形図(単位:mm)


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    PDF 3ENNCD12E IEC1000-4-230 SC-59EIAJ D11773JJ2V1DS00 108-0171NEC 46017NEC 54024NEC NNCD3.3E C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E TF-128

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117

    rd6.8a

    Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
    Text: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM


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    PDF X13769XJ2V0CD00 RD10UJ RD10UM RD11UJ RD11UM RD12UJ RD12UM RD13UJ RD13UM RD15UJ rd6.8a zener rd9.1esb2 rd5.6b 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


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    PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    RD5.6C

    Abstract: RD4.3P RD6,8MW rd4.7s 1SZ47 RD5.1J RD2.4E X13769XJ2V0CD00 RD51P NNCD6.8G
    Text: CD-ROM版ダイオード CD-ROM X13769XJ2V0CD00 09−1 ダイオード スイッチング・ダイオード • スイッチング・ダイオード 絶対最大定格 T A = 25 ℃ 品 名 外 形 電気的特性 (TA = 25 ℃) VR (V) IO (mA) I FM (mA) Tj


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    PDF X13769XJ2V0CD00 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 RD5.6C RD4.3P RD6,8MW rd4.7s 1SZ47 RD5.1J RD2.4E X13769XJ2V0CD00 RD51P NNCD6.8G

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


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    PDF D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original
    PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on


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    PDF NNCD12E IEC1000-4-2 NNCD12E IEC1000-42)

    tic 1260

    Abstract: NNCD5 NNC-03
    Text: DATA SHEET NEC E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS T h is p ro d u c t se rie s is a d io d e d e v e lo p e d fo r E.S.D (E le ctrostatic D ischarge) noise protection.


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    PDF NNCD12E NNCD11E 100jU tic 1260 NNCD5 NNC-03

    Nec AC 160

    Abstract: NEC D 586 nec 442
    Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on


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    PDF NNCD12E IEC1000-4-2 NNCD12E Nec AC 160 NEC D 586 nec 442