Untitled
Abstract: No abstract text available
Text: Marvell DragonFly NVRAM Second-Generation, High-Performance Non-Volatile DRAM Write Cache PRODUCT OVERVIEW The Marvell DragonFly NVRAM, part of the DragonFly platform family, delivers a high-performance 3.2 gigabytes-per-second GB/s Non-Volatile Dynamic Random Access Memory (NVRAM) write cache solution for low latency and IOPS-intensive applications. DragonFly
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NVRAM-02
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water level control block diagram
Abstract: NVSRAM "Ferroelectric RAM" EEPROM COPIER circuit Using nvsRAM in RAID Controller Applications
Text: Non-Volatile Static Random Access Memory NVSRAM - High Speed Nonvolatility By S. Vinayaka Babu, Product Marketing Engineer Staff, and Pramodh Prakash, Application Engineer, Cypress Semiconductor Corp. Introduction Memories are an integral part of any electronic system/application. They can be broadly classified as volatile memories (lose
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non volatile ferroelectric memory
Abstract: SYFR8128FK-15 SYFR8128FK
Text: 128K x 8 FRAM SYFR8128FK-15 Issue 1.0 August 2001 Description The SYFR8128FK is a 2.7~3.6V 1Mbit non volatile memory module employing advanced ferroelectric devices. A ferroelectric random access memory or FRAM is nonvolatile but operates similar to SRAM.
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SYFR8128FK-15
SYFR8128FK
150ns
SYFR8128FKI
non volatile ferroelectric memory
SYFR8128FK-15
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NVSRAM
Abstract: PDIP32 U632H64 U634H256
Text: Product Summary nvSRAM nvSRAM: SRAM and EEPROM within a single Chip Author: Dr. Stefan Günther Dr. Steffen Buschbeck Heiko Roeper Powerful processor systems which place high demands on reliability require optimum data storage systems. The nvSRAM non-volatile Static Random Access Memory now available
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fram
Abstract: MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R
Text: AN app note FRAM MCU Key Strengths and Applications Introduction0 Fujitsu’s Ferroelectric Random Access Memory FRAM microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be
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FRAM-AN-21377-09/2010
fram
MB95R203
fram rfid
0x61
FRAM Memory
FUJITSU FRAM
MB95R
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13103-4E
MB85R1001
MB85R1001
F0704
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13104-2E
MB85R1002
MB85R1002
F0701
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13103-8E
MB85R1001
MB85R1001
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PSEUDO SRAM
Abstract: MB85R1002 din 3102
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13104-4Ea
MB85R1002
MB85R1002
PSEUDO SRAM
din 3102
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MB85R2001
Abstract: MB85R2001PFTN-GE1
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13107-2E
MB85R2001
MB85R2001
F0709
MB85R2001PFTN-GE1
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-1E
MB85R2002
MB85R2002
F0704
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8085 microprocessor ram 4k
Abstract: microprocessor Rockwell R6500 8051 TLx rockwell 6500
Text: R2000 Memory Products 64 * Rockwell X R2000 8 NON-VOLATILE RAM ^ 6 Product Preview DESCRIPTION FEATURES The Rockwell R2000 Non-Volatile Random Access Memory NVRAM is a conventional 64 x 8 static random access memory (RAM) overlaid bit-for-bit with a 64 x 8 non-voltatile
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R2000
R2000
10-Year
R6500,
R65C00,
R65C00/21,
R6500/41
8085 microprocessor ram 4k
microprocessor Rockwell R6500
8051 TLx
rockwell 6500
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221220
Abstract: mbm2212-20 MBM2212-25 X2212
Text: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 December 1987 Edition 3.0 1024-BIT NON-VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry
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1024-BIT
MBM2212-20
500mV
MBM2212-25
18-pin
18-LEAD
221220
X2212
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MBM2212-25
Abstract: No abstract text available
Text: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 D ecem b er 1 9 8 7 E d itio n 3 .0 1024-BIT NON VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry
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1024-BIT
18-pin
MBM2212-20
MBM2212-25
MBM2212-25
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SRM2114C25
Abstract: SRM2114C-25 SRM2114C srm2114 2114T25
Text: SRM2114Ï25 CMOS 4K-BIT STATIC RAM I DESCRIPTION The SRM2114T25is a 1,024 words x 4 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby current consumption makes it ideal for applications requiring non-volatile storage with
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SRM2114
SRM2114T25is
SRM2114T25
250ns
SRM211425
SRM2114M25
SRM2114C25.
2114T25
SRM2114C25
SRM2114C-25
SRM2114C
2114T25
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SRM-2016
Abstract: SRM2016C SRM2016
Text: SRM2016 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM201612 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2016
16K-BIT
SRM201612
120ns
OI612
SRM201
SRM2016Cis.
SRM2016Ci2.
375mil
450mil.
SRM-2016
SRM2016C
SRM2016
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Untitled
Abstract: No abstract text available
Text: SRM201OOI-70/85/10 CMOS 1M-BIT STATIC RAM DESCRIPTION The SRM201 OOIjws&'io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
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SRM201OOI-70/85/10
SRM201
SRM20100L
SRM20100Lio
100ns
32-pin
UUUUUUL11JUUU1I11UU11
SRM20100LTM7o
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Untitled
Abstract: No abstract text available
Text: EPSON SRM20116LF85/10 1 M-Bit Static RAM • Low Supply Current • Access Time 85ns/100ns • 65,536 Wordsxl 6-Bit Asynchronous • DESCRIPTION The SRM20116LF85/10 is a 65,536 wordsxl 6-bit asynchronous, static, random access memory on a monolithic CMOS chip.Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
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SRM20116LF85/10
85ns/100ns
SRM20116LF85/10
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SRM2264LCT
Abstract: 2264L SRM2264
Text: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2264L
64K-BIT
100ns/120ns
SRM2264Lio/i2
SRM2264Lio
100ns
120ns
100ns
SRM2264LCT
2264L
SRM2264
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76C28A-10
Abstract: 76C28 GM76C28A-10 76C28A
Text: GM76C28A GoldStar GOLDSTAR ELECTRON CO., LTD. Description The GM76C28A is 2,048 words x 8 bits asyn chronous, static random access memory on a monolithic CMOS chip. Its very low standby pow er requirement makes it ideal for applications re quiring non-volatile storage with back-up
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GM76C28A
GM76C28A
76C28A-10
76C28
GM76C28A-10
76C28A
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SRM2564M
Abstract: SRM25
Text: SRM2564 CMOS 64K-BIT STATIC RAM • Low Voltage and Low Supply Current • Access Time 1,000ns • 8,192 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2564 is an 8,192 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2564
64K-BIT
000ns
SRM2564
DIP-28pin
OP2-28pin
SRM2564M
SRM25
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SRM2017C12
Abstract: SRM2017C SRM2017C10 SRM2017
Text: PF299-02 SRM2017C10/12 CMOS 16K-BIT STATIC RAM •L o w Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM2017C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile
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SRM2017C
PF299-02
16K-BIT
100ns/120ns
SRM2017C10/12
SRM2017Cio
100ns
SRM2017C12
120ns
SRM2017Cio/i2
SRM2017C
SRM2017C10
SRM2017
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srm2264lct
Abstract: No abstract text available
Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
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SRM2264LTio/i2
64K-BIT
SRM2264Lio/i2
SRM2264LTio
100ns
SRM2264LT
120ns
SRM2264LTio/i2
28-pin
srm2264lct
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Untitled
Abstract: No abstract text available
Text: OCT 16 m? GoldStar GM76C28 CMOS 16K-BIT STATIC RAM GOLD STAR CO., LTD. Description The GM76C28to/u is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up
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GM76C28
16K-BIT
GM76C28to/u
76C28-10
100ns
76C28-12
120ns
GM76C28wi2
GM76C28
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