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    MB85R1002 Search Results

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    MB85R1002 Price and Stock

    KAGA FEI America Inc MB85R1002ANC-GE1

    IC FRAM 1MBIT PARALLEL 48TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85R1002ANC-GE1 Tray 128
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.66594
    • 10000 $8.66594
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    Mouser Electronics MB85R1002ANC-GE1 113
    • 1 $10.31
    • 10 $9.55
    • 100 $8.18
    • 1000 $7.68
    • 10000 $7.43
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    FUJITSU Limited MB85R1002ANC-GE1

    SPECIALTY MEMORY CIRCUIT, PDSO48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MB85R1002ANC-GE1 204
    • 1 $20.026
    • 10 $20.026
    • 100 $17.0221
    • 1000 $16.0208
    • 10000 $16.0208
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    FUJITSU Semiconductor Limited MB85R1002APFCN

    1Mbit FRAM x16 parallel TSOP48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Symmetry Electronics MB85R1002APFCN 1
    • 1 $11.08
    • 10 $11.08
    • 100 $11.08
    • 1000 $11.08
    • 10000 $11.08
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    FUJITSU Semiconductor Limited MB85R1002ABGT

    1Mbit FRAM x16 parallel FBGA48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Symmetry Electronics MB85R1002ABGT 1
    • 1 $12.32
    • 10 $12.32
    • 100 $12.32
    • 1000 $12.32
    • 10000 $12.32
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    FUJITSU Semiconductor Limited MB85R1002ANC-GE1

    1Mbit,FRAM,x16parallel,TSOP48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Symmetry Electronics MB85R1002ANC-GE1 1
    • 1 $6.4
    • 10 $6.4
    • 100 $6.4
    • 1000 $6.4
    • 10000 $6.4
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    MB85R1002 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R1002 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x16) Original PDF
    MB85R1002ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP Original PDF
    MB85R1002BGT-GE1 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x 16) Original PDF
    MB85R1002PFTN Fujitsu NVRAM, FRAM, Parallel, 3.3V Supply Voltage, 48-Pin Original PDF
    MB85R1002PFTN-GE1 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x 16) Original PDF

    MB85R1002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-3v0-E MB85R1002A MB85R1002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-3v0-E MB85R1002A MB85R1002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-6E MB85R1002 MB85R1002

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-5E MB85R1002 MB85R1002

    F0501

    Abstract: MB85R1002 MB85R1002PFTN
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit 64 Kx16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13104-1E MB85R1002 MB85R1002 F0501 F0501 MB85R1002PFTN

    MB85R1002

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-3E MB85R1002 MB85R1002 F0708

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-4v0-E MB85R1002A MB85R1002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-1v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-1v0-E MB85R1002A MB85R1002A

    MB85R1001

    Abstract: MB85R1002 FUJITSU FRAM Ferro
    Text: New Products MB85R1001/MB85R1002 1M-bit x8/×16 FRAM 獏 MB85R1001/MB85R1002 獏 This products is a FRAM of 1M-bit 1T1C cell design, featuring high-density, low-power consumption, and high-performance of write/read operation times. Introduction • Operating Conditions


    Original     		PDF MB85R1001/MB85R1002 100ns 250ns I/O9-I/O16 I/O16 A0-15 IO1-16 MB85R1001 MB85R1002 FUJITSU FRAM Ferro

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-0v01-E MB85R1002A MB85R1002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-2E MB85R1002 MB85R1002 F0701

    PSEUDO SRAM

    Abstract: MB85R1002 din 3102
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-4Ea MB85R1002 MB85R1002 PSEUDO SRAM din 3102

    DS-501

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00004-2v0-E MB85R1002A MB85R1002A DS-501

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85RS256 256K-bit Serial Peripheral Interface FRAM MB85RS256 A 256K-bit 1T1C-type FRAM equipped with a serial peripheral interface SPI . It is a nonvolatile memory that enables a large number of writing/reading cycles at high speed and with low power consumption.


    Original     		PDF MB85RS256 256K-bit MB85R2OLD MB85Rxxxx MB85R1001ï MB85R1002ï MB85R256

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PDF PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70

    FUJITSU FRAM

    Abstract: SRAM 64k "Ferroelectric RAM" ISO14443 RFID BLOCK diagram 848kbps RFID ISO14443 MB94
    Text: • FRAM is a registered trademark of Ramtron International Corporation. Other company names and brand names are the trademarks or registered trademarks of their respective owners. Japan Marketing Div., Electronic Devices Shinjuku Dai-ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721


    Original     		PDF D-63225 49-6103-Inventory 32Kbyte MB89R111 ISO14443 FUJITSU FRAM SRAM 64k "Ferroelectric RAM" RFID BLOCK diagram 848kbps RFID ISO14443 MB94

    BC547 b20

    Abstract: BC547 B11 FES311-181 LM317t circuit MP5 A14 power supply lm317t PIN163 PIN176 LM317T PIN152
    Text: 5 4 A16 CS1x VCC Pin20 Pin21 Pin22 Pin23 Pin24 Pin25 Pin26 Pin27 Pin28 Pin29 Pin30 Pin31 Pin32 Pin33 Pin34 Pin37 Pin38 Pin39 Pin40 Pin41 A01 A20 D31 45 43 41 39 36 34 32 30 44 42 40 38 35 33 31 29 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2


    Original     		PDF Pin20 Pin21 Pin22 Pin23 Pin24 Pin25 Pin26 Pin27 Pin28 Pin29 BC547 b20 BC547 B11 FES311-181 LM317t circuit MP5 A14 power supply lm317t PIN163 PIN176 LM317T PIN152