Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MB85R1002PFTN Search Results

    MB85R1002PFTN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R1002PFTN Fujitsu NVRAM, FRAM, Parallel, 3.3V Supply Voltage, 48-Pin Original PDF
    MB85R1002PFTN-GE1 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x 16) Original PDF

    MB85R1002PFTN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-6E MB85R1002 MB85R1002

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-5E MB85R1002 MB85R1002

    F0501

    Abstract: MB85R1002 MB85R1002PFTN
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit 64 Kx16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13104-1E MB85R1002 MB85R1002 F0501 F0501 MB85R1002PFTN

    MB85R1002

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-3E MB85R1002 MB85R1002 F0708

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-2E MB85R1002 MB85R1002 F0701

    PSEUDO SRAM

    Abstract: MB85R1002 din 3102
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-4Ea MB85R1002 MB85R1002 PSEUDO SRAM din 3102