marking cck
Abstract: No abstract text available
Text: SE2609L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description The SE2609L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power
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SE2609L
IEEE802
SE2609L
DST-00369
Nov-01-2010
marking cck
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PDF
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JAN02
Abstract: No abstract text available
Text: A Micro CPC Issued 10/01 DESCRIPTION 1309096 APPLICATIONS • Ideal for Medical, Instrumentation and Industrial applications where size, contact density and durability are primary concerns. The nylon housings offer good resistance to a wide range of chemical agents while the IP65
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offe45555-1
Oct-01
Nov-01
Jan-02
JAN02
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fast recovery diode 1000v 30A
Abstract: 6RI50E-080M5 ESAL-01-01C 6RI30G-160 2fi300a-060 6RI75G-160B 6RI100G160 2RI250E-060 diode 100a 1000v 6RI75G160B
Text: DIODE MODULES Quick Selection Guide Nov-01 Comprehensive chart Rated current General use diode modules Repetitive peak reverse voltage VRRM 300V 30A 50A 600V 800V 6RI30E-060 6RI30E-080 6RI50E-060 6RI50E-080 1000V 1200V 1600V 6RI30G-120 6RI30G-160 6RI50E-080B
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Nov-01
6RI30E-060
6RI30E-080
6RI50E-060
6RI50E-080
6RI30G-120
6RI30G-160
6RI50E-080B
6RI50E-080M5
6RI75E-060
fast recovery diode 1000v 30A
6RI50E-080M5
ESAL-01-01C
6RI30G-160
2fi300a-060
6RI75G-160B
6RI100G160
2RI250E-060
diode 100a 1000v
6RI75G160B
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Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM36402EA-S •概要 ■特長 ELM36402EA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=6.5A ・ Rds on < 24mΩ (Vgs=4.5V) ・ Rds(on) < 35mΩ (Vgs=2.5V)
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ELM36402EA-S
100ms
NOV-01-2005
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM36402EA-S •General description ■Features ELM36402EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=6.5A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V)
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ELM36402EA-S
ELM36402EA-S
100ms
NOV-01-2005
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170M8637
Abstract: 170M8641 170M8623 170M8626 170M8617 170M8636 170M8640 DK27 zilox 170M8642
Text: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 3 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 900 315-1400A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 315 350
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15-1400A
-KN/110
-TN/110
NOV-01
170M8637
170M8641
170M8623
170M8626
170M8617
170M8636
170M8640
DK27
zilox
170M8642
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170m5988
Abstract: 170M5975 zilox 170M5989 170m5990 bussmann semiconductor fuse DIN TYPE bussmann typower bussmann zilox 170m bussmann semiconductor fuse 630 amp 170M5969
Text: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 2 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 250-800A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 250 315 350 400 450 500
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50-800A
-KN/110
-TN/110
170M5966
170M5967
170M5968
170M5969
170M5970
170M5971
170M5972
170m5988
170M5975
zilox
170M5989
170m5990
bussmann semiconductor fuse DIN TYPE
bussmann typower
bussmann zilox 170m
bussmann semiconductor fuse 630 amp
170M5969
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murata ceramic filter e10.7a
Abstract: e10.7a murata filter E10.7A SFE10.7MA21 SFE10,7ma murata filter 20kHZ murata filter ceramic 10.7 murata filter murata filter 10.7 E10,7A
Text: Add Document Product Specification for Reference Only Issue Date : 7/16/2003 Part Description : Date Format: 5/5/2001 Ceramic Filter Murata Part Number Murata Global Part Number: SFELA10M7DF0021-B0 Murata Previous Part Number: SFE10.7MA21 *Attention: Murata will change to Global Part Numbers in June 2001. Global
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SFELA10M7DF0021-B0
SFE10
7MA21
murata ceramic filter e10.7a
e10.7a
murata filter E10.7A
SFE10.7MA21
SFE10,7ma
murata filter 20kHZ
murata filter ceramic 10.7
murata filter
murata filter 10.7
E10,7A
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ELM36402EA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM36402EA-S •概要 ■特点 ELM36402EA-S 是 N 沟道低输入电容，低工作电压， •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=6.5A ·Rds on < 24mΩ (Vgs=4.5V) ·Rds(on) < 35mΩ (Vgs=2.5V) ■绝对最大额定值
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ELM36402EA-S
100ms
NOV-01-2005
ELM36402EA
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FS1575
Abstract: video sdi splitter
Text: FS1575 SDI VIDEO SPLITTER The FS1575 provides a low cost solution to splitting a single serial digital video signal between two destinations where ultimate performance can be reduced. It requires no power and only introduces a modest insertion loss. Input/Output Signal Format
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FS1575
FS1575
259M-C)
DR00334A
DT00068
Fara339s
Nov-01
video sdi splitter
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AN024
Abstract: cygnal an024 B-100 C8051F300 C8051F301 C8051F302 C8051F303 communication techniques inc
Text: CYGNAL Application Note Pin Sharing Techniques for the C2 Interface Relevant Devices This application note applies to the following devices: C8051F300, C8051F301, C8051F302, and C8051F303. Introduction About the C2 Pins C8051F30x devices include an on-chip Cygnal
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C8051F300,
C8051F301,
C8051F302,
C8051F303.
C8051F30x
10-pin
AN024
NOV01
cygnal an024
B-100
C8051F300
C8051F301
C8051F302
C8051F303
communication techniques inc
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7MBR30SA060-50
Abstract: 1200V 2MBI300N-060-04 7mbr35sa 7MBR30SA060 7MBI50N-120 2mbi200n 2MBI150NC-120 2MBI50N-120 2MBI75N-120
Text: IGBT MODULES Nov-01 Quick Selection Guide IGBT modules N series * Low saturation voltage VCE sat Max. 2.8volts (600volts class), 3.3volts (1200volts class) * High speed switching ton 1.2ms toff 1.0ms tf 0.35ms (600volts class) * Low switching noise ton 1.2ms toff 1.5ms tf 0.5ms (1200volts class)
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Nov-01
600volts
1200volts
1MBI200N-120
7MBR25SA120
7MBR25SA140
7MBR30SA060-50
1200V
2MBI300N-060-04
7mbr35sa
7MBR30SA060
7MBI50N-120
2mbi200n
2MBI150NC-120
2MBI50N-120
2MBI75N-120
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6mbp50rta060
Abstract: 7mbp50rta060 7MBP50RtA060 01 6mbp20rta060 7MBP150RTA060 6mbp50rta 6MBP150RTA060 6MBP50RA-120 6mbp80rtb060 7MBP75RA120
Text: IGBT-IPM Quick Selection Guide Nov-01 * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series package * High performance and higi reliability IGBT with overheating protection
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Nov-01
00V/1200V
6MBP15RH060
6MBP20RH060
6MBP25RA120
6MBP50RA060
7MBP50RA060
6MBP50RA120
7MBP50RA120
6MBP75RA060
6mbp50rta060
7mbp50rta060
7MBP50RtA060 01
6mbp20rta060
7MBP150RTA060
6mbp50rta
6MBP150RTA060
6MBP50RA-120
6mbp80rtb060
7MBP75RA120
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esjc15-10
Abstract: ESJC15 ESJC16-12 ESJC15 -10 ESJC16 ESJA08 ESJC16-09 ESJA08-08 esjc ESJC13-12B
Text: High voltage diodes Quick Selection Guide Nov-01 Single Package VRRM Io KV 2 2 3 4 5 Lead General purpose type 6 8 9 10 12 14 16 18 20 24 1.0 5.0 5.0 5.0 5.0 5.0 5.0 0.3 0.5 0.5 0.5 0.5 0.5 0.5 ESJA04-[]A ESJA57-[]A ESJA58-[]A ESJA54-[]A ESJA52-[]A ESJA53-[]A
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Nov-01
ESJA04-[
ESJA57-[
ESJA58-[
ESJA54-[
ESJA52-[
ESJA53-[
ESJA59-[
ESJA08-08
ESJA09-10
esjc15-10
ESJC15
ESJC16-12
ESJC15 -10
ESJC16
ESJA08
ESJC16-09
ESJA08-08
esjc
ESJC13-12B
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SE2608L
Abstract: QAD-00044 QAD00045
Text: SE2608L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description The SE2608L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power
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Original
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SE2608L
IEEE802
SE2608L
DST-00367
Nov-01-2010
QAD-00044
QAD00045
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PDF
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varistor ENC series
Abstract: ENC471C-14A ENC471D-14A ENC431D-10A ENC201D-14A ENC621D-10A ENC221D-14A ENC241D ENC221D-10A ENE201D-05A
Text: Fuji Ceramic Surge Absorbers ENC series , ENE series Nov-01 Types and characteristics varistor voltage Maximum rating Peak current Applied voltage 8/20us Amps. 125 Volts ACrms Volts DCrms 22(20 to 24) 27(24 to 30) 33(30 to 36) 39(35 to 43) 47(42 to 52) 56(50 to 62)
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Nov-01
8/20us)
ENE391D-20A
ENE431D-10A
ENC431D-20A
ENE431D-14A
ENE431D-20A
ENE471D-10A
ENC471D-20A
ENE471D-14A
varistor ENC series
ENC471C-14A
ENC471D-14A
ENC431D-10A
ENC201D-14A
ENC621D-10A
ENC221D-14A
ENC241D
ENC221D-10A
ENE201D-05A
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KS926S2
Abstract: YG911S2R YG912S6 YG963S6R PG905C4 YG961S6R kp926 CB903-4 ERA91-02 ERB91-02
Text: Low-loss Fast Recovery Diodes Quick Selection Guide Nov-01 LLD Single Package Lead VRRM Io Volts 200 O O 300 400 500 600 0.5 1.0 1.0 1.0 1.5 3.0 O SC(SMD) K-pack(SMD) K-pack TO-220AB TO-220F15 (Amps.) O O O O O O O O O O O IFSM (Amps.) 10 20 25 25 25 50
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Nov-01
O-220AB
O-220F15
ERA91-02
ERB91-02
CB903-4
ERA92-02
ERB93-02
ERC91-02
SC902-2
KS926S2
YG911S2R
YG912S6
YG963S6R
PG905C4
YG961S6R
kp926
CB903-4
ERA91-02
ERB91-02
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170M4983
Abstract: 170M4981 170M4986 bussmann semiconductor fuse DIN TYPE 170M4970 bussmann zilox 170m 170M4980 bussmann semiconductor fuse 630 amp 170M4982 microswitch bussmann
Text: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 1 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 160-630A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 160 200 250 315 350 400
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60-630A
-KN/110
-TN/110
170M4965
170M4966
170M4967
170M4968
170M4969
170M4970
170M4971
170M4983
170M4981
170M4986
bussmann semiconductor fuse DIN TYPE
170M4970
bussmann zilox 170m
170M4980
bussmann semiconductor fuse 630 amp
170M4982
microswitch bussmann
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Untitled
Abstract: No abstract text available
Text: REVISIONS REV 18.91 17.91 DATE PROPOSAL ADDING PN CUPPED ON PCB TAIL. CHANGE PACKING QUANTITY._ A 0 .4 2 [.0 1 7 ] [.7 4 5 ] MAX [.7 0 5 ] MIN. ECN. ERN NO. B REV. BY APPRD. NOV01 /1 1 L.CHAN S E P 2 0 /1 2 L.CHAN 1 4 .8 8 [.5 8 6 ] 4 .4 4 5 [.1 7 5 ]
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OCR Scan
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NOV01
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PDF
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Untitled
Abstract: No abstract text available
Text: n 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,19 LOC A LL R IG H T S R ES E R V E D . AA D IST revision 20 DESCRIPTION LTR D ADDED : - 4 - DWN DATE 08N0V01 P E R EC 0 5 1 5 - 0 0 2 0 - 0 1
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08N0V01
NOV-01
atnp36051
/home/amp36051
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G 2 3 R E L E A S E D FO R P U B L IC A T IO N IS U N P U B L IS H E D . F E B ,1 9 9 5 DIST LOC REVISIONS A L L R IG H T S R E S E R V E D . C O P Y R IG H T 1995 BY TYCO E LE C TR O N IC S C O R P O R A TIO N . LTR D E S C R IP T IO N
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FJ00-1
30NOV01
UL94-V0
0002MIN
31MAR2000
29NOVQ1
i0t0261
CadData\AutoCAD\fj033721
TSUJl\EH06\c91
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p121 smd
Abstract: P1210 P46 SMD XF001 3W27
Text: 3. E l e c t r i c a l 1. D im e n s i o n s : A •0.68 Max • Isolation Voltage: 500 VAC Pri to Sec for 60 Sec Turns Ratio: 1 0-12:1 -2:1 -3 =1:1:1,266±5% Turns Ratio: (4—6:9-7)=1:2CT±5% 0CL: P12-10 1.5mH Min @100KHz 0.2V OCL: P4-6 1.2mH Min @100KHz Q.2V
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XF0013W27
P12-10
100KHz
P12-1
E15155B
-f125
p121 smd
P1210
P46 SMD
XF001
3W27
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PDF
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210C
Abstract: NOV-01
Text: AMR AMP FH 0.6 mm Pitch Board-to-Board Connector 114-— 5 2 5 5 2 2 - N O V -01 Rev A M I S ES Scope 1. 1 fa ^ 7 ] ~ • /\^ b • o. 6 1. 1 Contents This specification covers the requirements for mount of 0. 6 mm Pitch Board-to-Board Connector Free Height Type.
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NOV-01
FJOO-2726-Ot
FJ00-2726-01
FJ00-1319â
15-Jul-Ol
FJ00-2726-01
210C
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PDF
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74ALVT16245
Abstract: AV16245DL
Text: Philips Semiconductors Product specification 2.5V/3.3V ALVT 16-bit transceiver 3-State FEATURES 74ALVT16245 • Latch-up protection exceeds 500mA per JEDEC Std 17 • 16-bit bidirectional bus interface • ESD protection exceeds 2000V per MIL STD 883 Method 3015
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16-bit
74ALVT16245
64mA/-32mA
500mA
74ALVT16245
711Dflab
TSSOP48:
AV16245DL
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PDF
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