Contextual Info: http://www.fujisemi.com YG912S6RR FUJI Diode Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Repetitive peak reverse voltage VRRM Isolating voltage Viso Terminals-to-case, AC.1min

50Hz sine wave filter circuit

Abstract: YG912S6R FULL WAVE RECTIFIER active
Contextual Info: YG912S6R 10A (600V / 10A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF

YG912S6

Contextual Info: FUJI '95 No.16 . MZ MS Ê i i 111ti I Ï» sI [iU M s ií lf e lJ E ï ¿u*<uM>I %’-4 i ^ ^ *«!!?•#íl'if i %|t i'i :± ^ M 0i f . . ! ; * . ¡ a Í,S ^ t I ;í ‘^1 ?;í,'r 1 " "" - r ' JU S S & ^ 'f t - K 6 0 0 V /1 0 A YG912S6 LOW LOSS SUPER HIGH SPEED RECTIFIER DIODE

50Hz sine wave filter circuit

Abstract: YG912S6
Contextual Info: YG912S6 10A (600V / 10A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 Features 13.0MAX. 3.7 1 0.8 5.08 Insulated package by fully molding Low VF 2.7 0.4 Super high speed switching High reliability by planer design

yg311s6

Abstract: ilpi 031
Contextual Info: - 90- « B W06C W09A W09B W09C YG311S5 YG911S2 YG911S3 YG912S2 YG912S6 & B ÍL B aL B ÍL s ä ä ± *h Vr s m V rr m V (V) * Vr IFM (V) (A) s <°C) (A) 250 100 150 250 600 200 50 100 200 600 0. 0. 0. 0. 4 300 200 6QQ 200 300 200 600 5 5 10 10 75 6 6 6

YG912S6

Contextual Info: YG912S6 10A (600V / 10A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Outline drawings, mm 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 Features 13.0MAX. 3.7 1 0.8 5.08 Insulated package by fully molding Low VF 2.7 0.4 Super high speed switching High reliability by planer design

power Diode 200V 10A

Abstract: Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

YG911S2R

Abstract: IF-10A
Contextual Info: tf —K / Rectifier Diodes • I S l i ^ ^ if iii 5?"-f —K Low-Loss Fast. Recovery Diodes LLDi 1 in one-package MX Device type ERA91-02 ERB91-02 CB903-4 ERA92-02 SC902-2 ERB93-02 ERC91-02 KS926S2 ERC90-02 YG911S2R YG911S3R YG912S2R YG912S6R TS912S6R M i l « M B + C ft

yg912s

Abstract: 223a 100C J-120 YG912S6
Contextual Info: YG912S6 10A • Outline Drawing l o w l o s s s u p e r HIGH s p e e d r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

diode 10a 400v

Abstract: TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

pla 005a

Contextual Info: FUJI '9 5 N o . 1 6 ¡M?í ->; -. iu<Síí>* :± m R | | j § :M § i ; f Ä Ä -i % •N « : ? 600V / 1 0 A YG912S6 LO W LO SS S U P E R HIG H S P E E D R E C TIFIE R D IO D E I fr| Ji Features 4.5 ±0.2 fttc • 2.7±0.2 K i ? - f 7 ° Insulated package by fully m olding

50Hz sine wave filter circuit

Contextual Info: YG912S6 10A (600V / 10A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Outline drawings, mm 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF

YG912S6R

Contextual Info: YG912S6R 10A LOW LOSS SUPER HIGH SPEED RECTIFIER (600V / 10A ) Outline drawings, mm 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF

100C

Abstract: YG912S6
Contextual Info: FUJI '95 No. 16 _ _ î W ?! ü f i l »i f w ¥• i 1i i » • -. t>*ri» •*;* i H * •» •» * . » » » ‘ »«Lf * >t * ' ’ , ' ' .* H l * ., tf. , M . * , V <*,*. * - T » ,4i.-i*i>l<~i>. « •» »■*• v l * . V Î / » . ^ » ÏV *

YG912S6RR

Abstract: yg912s
Contextual Info: DATE DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

esab34

Abstract: yg906
Contextual Info: FAST RECOVERY DIODES 200 -1000Volts 200 - 300VOLTS PACKAGE Part Number lo A 400-500 VOLTS ÜT nS Part Number 600-800 VOLTS lo (A) trr nS Part Number 1000 VOLTS lo (A) trr nS SG201-2 0.5 400 SC201-4 0.5 400 SC201-6 0.5 40Q SURFACE SC902-2 1 35 SC311-4 0.5

TC106A

Contextual Info: Fast Recovery Diodes Single package Ratings and characteristics Maximum rating Type Vrrm Volts Amps. °C Max. Volts VS -40 to +150 0.95 If=5A 0.1 0.035 *4 10.0 0.6 Fig. 1 -40 t o +150 0.95 (If=5A) 0.1 0.035 *4 3.0 2.0 Fig. 3 200 5 (Tc=134°C) 50 -40 to +150

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

yg962s6

Abstract: SMD F2A YG911S2R 220F CB903-4 CB903-4S ERA91-02 ERA92-02 YG902C2R ERB93-02
Contextual Info: 整流ダイオード / Rectifier Diodes • 低損失超高速ダイオード Low-Loss Fast Recovery Diodes（LLD） シングル 1 in one-package 形式 Device type ERA91-02 SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps.

KS926S2

Abstract: YG911S2R YG912S6 YG963S6R PG905C4 YG961S6R kp926 CB903-4 ERA91-02 ERB91-02
Contextual Info: Low-loss Fast Recovery Diodes Quick Selection Guide Nov-01 LLD Single Package Lead VRRM Io Volts 200 O O 300 400 500 600 0.5 1.0 1.0 1.0 1.5 3.0 O SC(SMD) K-pack(SMD) K-pack TO-220AB TO-220F15 (Amps.) O O O O O O O O O O O IFSM (Amps.) 10 20 25 25 25 50

G-160B

Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Contextual Info: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as

STPS30S45CT

Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S
Contextual Info: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.