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Eaton Cutler-Hammer


Eaton Cutler-Hammer NOV-14
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NOV14 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SCD80 Abstract: BB644 BB664 BB664-02V SC79 Contextual Info: BB644 /BB664. Silicon Variable Capacitance Diodes For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V 1 2 Type BB644	Original	BB644 /BB664. BB644 BB664/-02V BB664 BB664-02V OD323 SCD80 Nov-14-2002 SCD80 BB664 BB664-02V SC79	PDF
marking code INFINEON Abstract: A2003 marking code of 0 to Z BB867-02V Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration	Original	BB867. /C25V BB867-02V BB867-02V* Nov-14-2002 marking code INFINEON A2003 marking code of 0 to Z BB867-02V	PDF
67-21/GHC-BV1/2T Contextual Info: Technical Data Sheet TOP View LEDs 67-21/GHC-BV1/2T Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow and wave solder processes. ․Computable with automatic placement equipment.	Original	67-21/GHC-BV1/2T DSE-0000392 Nov-14-2008 67-21/GHC-BV1/2T	PDF
BBY55-03W Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W	Original	BBY55. BBY55-02V BBY55-02W BBY55-03W SCD80 OD323 Nov-14-2002 BBY55-03W	PDF
SE2620T-EK1 Abstract: mobile phone jammer circuit operation mobile phone jammer Bluetooth Jammer MOBILE jammer circuit diagram mobile phone jammer circuit diagram SE2620T pen drive circuit design Contextual Info: DATA SHEET SE2620T: 2.4 GHz Wireless LAN/BT Front End Preliminary Applications • • Product Description IEEE802.11b DSSS WLAN IEEE802.11g,n OFDM WLAN Features        Dual Mode IEEE802.11b & IEEE802.11g Integrated PA, Harmonic Filter, LNA and BT port	Original	SE2620T: IEEE802 SE2620T DST-00482 SE2620T-EK1 mobile phone jammer circuit operation mobile phone jammer Bluetooth Jammer MOBILE jammer circuit diagram mobile phone jammer circuit diagram pen drive circuit design	PDF
YCL* rj45 Abstract: 208H Contextual Info: Sch em atic: n H .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P1 + 2 + 3 Turns Ratio: TX 1CT:1CT ±3% RX to P 6 + 7 + 8 ) 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum <3>1D0KHz IDOmV 8mADC	OCR Scan	350uH 100KHz 10OmV 300KHz-1 00MHz) 30MHz -12dB 80MHz XFATM11 YCL* rj45 208H	PDF
1803465 Contextual Info: Tips, tricks, and techniques from the analog signal-path experts S009 ਿᕀంኒi ΣЄ‫ݯ‬ঢ়ࢽॶ঩໔༏ࢗ ‫ܥ‬ፕ‫י‬ɣኂdᗘˈᅕϽ ᔝ౒ኂʥࣂᘸཋ༏ ၉ɐஉ߮ɮԮ ΣЄ‫ݯ‬ঢ়ࢽॶ঩໔༏ࢗ‫ܥ‬ፕ‫י‬ɣኂd	Original	SP009 Nov14 1803465	PDF
KX23H-1035 Contextual Info: ± 2g / 4g / 8g Tri-axis Digital Accelerometer with Embedded Sensor Hub Specifications Brief PART NUMBER: KX23H-1035 Rev. 0.1 Nov-14 Product Description The KX23H is a smart sensor hub system consisting of a tri-axis +/-2g, +/-4g or +/-8g silicon micromachined accelerometer and a highperformance ARM 32-bit Cortex -M0 CPU core with 128 kbyte flash	Original	KX23H-1035 Nov-14 KX23H 32-bit KX23H-1035	PDF
BBY66 Abstract: BBY66-02V BBY66-05 BBY66-05W SC79 Contextual Info: BBY66. Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread BBY66-02V BBY66-05 BBY66-05W	Original	BBY66. BBY66-02V BBY66-05 BBY66-05W BBY66-02V* BBY66-05W* OT323 temBBY66-05) Nov-14-2002 BBY66 BBY66-02V BBY66-05 BBY66-05W SC79	PDF
BB867-02V Abstract: BB867 SC79 marking 06 Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration	Original	BB867. /C25V BB867-02V BB867-02V* Nov-14-2002 /CT25 /CT28 BB867-02V BB867 SC79 marking 06	PDF
BBY55-03W Abstract: BBY55 BBY55-02V BBY55-02W SC79 SCD80 Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W	Original	BBY55. BBY55-02V BBY55-02W BBY55-03W SCD80 OD323 Nov-14-2002 BBY55-03W BBY55 BBY55-02V BBY55-02W SC79 SCD80	PDF
SCD80 Abstract: MARKING CODE CT2 BBY55-03W Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W	Original	BBY55. BBY55-02V BBY55-02W BBY55-03W SCD80 OD323 Nov-14-2002 MARKING CODE CT2 BBY55-03W	PDF
Infineon Technologies Silicon Tuning Diode Abstract: INFINEON marking Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration	Original	BB867. /C25V BB867-02V BB867-02V* Nov-14-2002 Infineon Technologies Silicon Tuning Diode INFINEON marking	PDF