P-MUSB-A111-XX
Abstract: MUSB Amphenol USB 3.0 MUSB-2A111-024-BP usb a dwg usb dwg
Text: 7 8 6 5 3 4 1 2 REV - DESCRIPTION - DATE - APPROVED D - PRODUCT DWG EAR 13196 - NOV23/07 - K.L. E - PRODUCT DWG (EAR 13219) - JAN28/08 - K.L. 5.50 [.217] DEEP THREADED HOLES, SEE ORDERING CODE THREAD OPTION 4.00 .157 2.00 .079 F F 18.00 .709 14.00 .551 2.50
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NOV23/07
JAN28/08
MAR01/07
P-MUSB-A111-XX
P-MUSB-A111-XX
MUSB
Amphenol USB 3.0
MUSB-2A111-024-BP
usb a dwg
usb dwg
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ph74
Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Text: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78862C
ePV6300
ph74
ph71
ph76
ph77
EM78886
EM78808
EM78862C
EM78P808
OSCILLATOR 32.768K resistor
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Untitled
Abstract: No abstract text available
Text: BCX51.BCX53 1 PNP Silicon AF Transistors 2 3 • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage 2 • Complementary types: BCX54.BCX56 NPN VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C
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BCX51.
BCX53
BCX54.
BCX56
VPS05162
BCX51
BCX51-10
BCX51-16
BCX52
BCX52-10
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FE SOT223
Abstract: No abstract text available
Text: BCP54.BCP56 NPN Silicon AF Transistors 4 • For AF driver and output stages • High collector current 3 • Low collector-emitter saturation voltage 2 • Complementary types: BCP51.BCP53 PNP 1 Pin Configuration VPS05163 Type Marking BCP54 BCP54 1=B
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BCP54.
BCP56
BCP51.
BCP53
VPS05163
BCP54
BCP54-10
BCP54-16
BCP55
BCP55-10
FE SOT223
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SOT89 MARKING CODE 43
Abstract: SOT89 MARKING CODE 02 bcx52 infineon marking af sot89
Text: BCX51.BCX53 1 PNP Silicon AF Transistors 2 3 • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage 2 • Complementary types: BCX54.BCX56 NPN VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C
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BCX51.
BCX53
BCX54.
BCX56
VPS05162
BCX51
BCX51-10
BCX51-16
BCX52
BCX52-10
SOT89 MARKING CODE 43
SOT89 MARKING CODE 02
bcx52 infineon
marking af sot89
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02LRH
Abstract: BAR64-03W bar6403w e6327
Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)
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BAR64.
BAR64-02L
BAR64-02LRH
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
02LRH
BAR64-03W
bar6403w e6327
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Untitled
Abstract: No abstract text available
Text: EM78862C 8-Bit RISC Type Microprocessor Product Specification Doc. Version 1.9 ELAN MICROELECTRONICS CORP. March 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.
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EM78862C
Mar-08-2005
10KOhms
32x16
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Untitled
Abstract: No abstract text available
Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)
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BAR64.
BAR64-02L
BAR64-02LRH
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
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PA2423
Abstract: PA2423U PA2423U-R PA2423L QFN 36 footprint
Text: PA2423U RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary Applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423U is designed for 2.4 GHz wireless applications, including BluetoothTM Class1 and
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PA2423U
PA2423U
131-DST-01
Nov-23-2004
QA112304
PA2423
PA2423U-R
PA2423L
QFN 36 footprint
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BAR50
Abstract: BAR50-02L BAR50-02V BAR50-03W SC79
Text: BAR50. Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias
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BAR50.
BAR50-02L
BAR50-02V
BAR50-03W
OD323
BAR50
BAR50-02L
BAR50-02V
BAR50-03W
SC79
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BAR64-02LRH
Abstract: BAR64-04 BAR64 BAR64-02L BAR64-02V BAR64-03W BAR64-04W BAR64-05 BAR64-05W BAR64-06
Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)
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BAR64.
BAR64-02L
BAR64-02LRH
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-02LRH
BAR64-04
BAR64
BAR64-02L
BAR64-02V
BAR64-03W
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
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Untitled
Abstract: No abstract text available
Text: BCX51.BCX53 1 PNP Silicon AF Transistors 2 3 • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage 2 • Complementary types: BCX54.BCX56 NPN VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C
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BCX51.
BCX53
BCX54.
BCX56
VPS05162
BCX51
BCX51-10
BCX51-16
BCX52
BCX52-10
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BAR50-02W
Abstract: No abstract text available
Text: BAR50. Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias
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BAR50.
BAR50-02L
BAR50-02V
BAR50-03W
OD323
BAR50-02L,
BAR50-02V,
BAR50-02W
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Untitled
Abstract: No abstract text available
Text: BAR50. Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias
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BAR50.
BAR50-02L
BAR50-02V
BAR50-03W
OD323
BAR50-02L,
BAR50-02V,
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Untitled
Abstract: No abstract text available
Text: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C WALNUT.CA.91789, U.S.A. E-MAIL : sales@sunled.com URL ADDRESS : http://www.sunled.com SUNLED ZAG55W-03 DOME LENS 3.2X1.6mm 1206 SMD CHIP LED 0.6(.024) -H - 3.2(.126) J POLARITY MARK ° I» °(2) NOTES: 1MI dimensions are in mil imatersÇinches)
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ZAG55W-03
NOV23
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