NPN, SI, POWER TRANSISTOR, PLASTIC Search Results

NPN, SI, POWER TRANSISTOR, PLASTIC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN, SI, POWER TRANSISTOR, PLASTIC Price and Stock

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SL Power Electronics CINT1275A1214K01 AC/DC Power Supply Single-OUT 12V 15A 180W 18-Pin
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Onlinecomponents.com	CINT1275A1214K01		291			1 $442.33 10 $429.17 100 $156.69 1000 $156.69 10000 $156.69	Buy Now
Alpha Packaging FE020500SR-W
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Onlinecomponents.com	FE020500SR-W		228			1 $0 10 $0 100 $0 1000 $0 10000 $0	Buy Now
Modor Plastics CC-LEX-WHI
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Onlinecomponents.com	CC-LEX-WHI		218			1 $0 10 $0 100 $0 1000 $0 10000 $0	Buy Now
SL Power Electronics CINT1275A4814K01 AC/DC Power Supply Single-OUT 48V 3.75A 180W 18-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CINT1275A4814K01		135			1 $442.33 10 $429.17 100 $156.69 1000 $156.69 10000 $156.69	Buy Now
Modor Plastics CAQ-LEXAN-BLK
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Onlinecomponents.com	CAQ-LEXAN-BLK		30			1 $30.42 10 $20.73 100 $20.73 1000 $20.73 10000 $20.73	Buy Now

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NPN, SI, POWER TRANSISTOR, PLASTIC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN1541 Abstract: transistor 22p 30mils L239N START499 transistor k 316 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541 transistor 22p L239N transistor k 316	PDF
AN1541 Abstract: START499 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541	PDF
AN1541 Abstract: START499 L239 3C910 nh060 Text: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the	Original	AN1541 START499 200mA) 23dBm, OT-343 SC-70) 30mils AN1541 L239 3C910 nh060	PDF
Untitled Abstract: No abstract text available Text: , Dnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2 GHz wideband transistor DESCRIPTION BF763 PINNING NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF	Original	BF763	PDF
BFR96S Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764 Text: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	BFR96S 711002b 004S7Ã 11PHIN BFQ32S. BFR96S 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764	PDF
BFR134 Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37	OCR Scan	bbS3T31 BFR134 BFR134	PDF
BFS17 Abstract: BFY90 PHILIPS BFY90 BFS17 PHILIPS Philips BFy90 Text: N AMER P H I L I P S / D I S C R E T E H5 E D • bbSSTBl 31JJI L010131 I BFS17 Jl r - 3 t - n N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended for a wide range of v.h.f. and u.b.f. applications in thick and thin-film circuits.	OCR Scan	BFS17 OT-23 500MHz; 7z10168 BFS17 BFY90 PHILIPS BFY90 BFS17 PHILIPS Philips BFy90	PDF
MSA035 Abstract: BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC Text: Philips Semiconductors Product specification NPN video transistor BFQ226 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package.	OCR Scan	BFQ226 OT223 OT223. MBG495 7110flEb MSA035 711Dfl2b BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC	PDF
transistor BFR91 Abstract: BFR91 transistor CR NPN BFR91 philips Text: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,	OCR Scan	ON4186) BFQ23. 31-I7 BFR91 BFR91 DQ457Dfl transistor BFR91 transistor CR NPN BFR91 philips	PDF
transistor BFR91 Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor Text: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial	OCR Scan	BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor	PDF
npn 2222 transistor Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851 Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.	OCR Scan	BFG198 OT223 7110fl2b MSA035 OT223. npn 2222 transistor BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851	PDF
philips 22 ah 590 Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032 Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.	OCR Scan	BFG198 OT223 7110fl2b MSA035 OT223. 711002b philips 22 ah 590 npn 2222 transistor 629 08103 TRANSISTOR FQ Philips 2222 032	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation • Good thermal stability. Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the	OCR Scan	BF547W OT323 BF547W BF547. 007434D	PDF
BFR90A Abstract: BFR92A BFT92 A18 transistor Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;	OCR Scan	bbS3T31 001fl0b3 BFR92A OT-23 BFT92 150mV; BFR90A BFR92A BFT92 A18 transistor	PDF

S100 NPN Transistor Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503 Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF	OCR Scan	fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503	PDF
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan		PDF
transistor smd zG Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with	OCR Scan	BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG	PDF
lc 945 p transistor Abstract: lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801 Text: □□31ÖRS 7 s ö P hilips Sem ico n d u cto rs IAPX Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE D ESC R IP T IO N hTE T> PINNING NPN transistor in a plastic SO T37 envelope primarily intended for MATV applications. The device	OCR Scan	BFR96S BFQ32S. lc 945 p transistor lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801	PDF
8115, transistor Abstract: JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors 50-WATT MJE603 JE701 MJE700T mje801 Text: MOTORGLA SC 1SE D I b3b?2SM 0005333 fl XSTRS/R F I T-33-33 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN MJE700J thru MIE703 MJE800J thru MJE803 4.0 AMPERE PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose am p lifie r and low-speed switching	OCR Scan	T-33-33 MJE700J MIE703 MJE800J MJE803 Q0aS33b MJE703 MJE800 8115, transistor JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors 50-WATT MJE603 JE701 MJE700T mje801	PDF
Untitled Abstract: No abstract text available Text: BF570 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended fo r use in large-signal handling i.f. pre amplifiers o f TV receivers in combination w ith surface acoustic wave filters.	OCR Scan	BF570 OT-23	PDF
transistor TIP3055 Abstract: power transistor tip3055 TIP3055 003S02 circuit use tip2955 transistor PNP TIP3055 TIP2955 transistor PNP TIP2955 tip3055 TRANSISTOR Text: TIP3055 _ SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general am plifier and switching applications. P-N-P complement is T IP 2 9 5 5 . Q U IC K R E F E R E N C E D A T A	OCR Scan	TIP3055 OT-93 TIP2955. OT-93. 003S02Ã transistor TIP3055 power transistor tip3055 TIP3055 003S02 circuit use tip2955 transistor PNP TIP3055 TIP2955 transistor PNP TIP2955 tip3055 TRANSISTOR	PDF
TIP3055T Abstract: USA060-1 transistor 8771 transistor 902 Text: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended	OCR Scan	TIP3055T TIP295ST T0-220. bb53T31 003S03E TIP3055T USA060-1 transistor 8771 transistor 902	PDF
TP30C Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B Text: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30	OCR Scan	TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B -TiP29C TIP30C TP30C A 652 tip30c TIP29C TIP30	PDF
relay Re 04501 Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997	OCR Scan	ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031	PDF

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NPN, SI, POWER TRANSISTOR, PLASTIC Search Results

NPN, SI, POWER TRANSISTOR, PLASTIC Result Highlights (5)

NPN, SI, POWER TRANSISTOR, PLASTIC Price and Stock

SL Power Electronics CINT1275A1214K01

Alpha Packaging FE020500SR-W

Modor Plastics CC-LEX-WHI

SL Power Electronics CINT1275A4814K01

Modor Plastics CAQ-LEXAN-BLK

NPN, SI, POWER TRANSISTOR, PLASTIC Datasheets Context Search

AN1541

AN1541

AN1541

Untitled

BFR96S

BFR134

BFS17

MSA035

transistor BFR91

transistor BFR91

npn 2222 transistor

philips 22 ah 590

Untitled

BFR90A

S100 NPN Transistor

transistor cross reference

transistor smd zG

lc 945 p transistor

8115, transistor

Untitled

transistor TIP3055

TIP3055T

TP30C

relay Re 04501