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    NPN 1 AMPER Search Results

    NPN 1 AMPER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation

    NPN 1 AMPER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3716

    Abstract: No abstract text available
    Text: 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 V. 1 of 1 Home Part Number: 2N3716 Online Store 2N3716 Diodes 1 0 AM PERE PO WER TRANSISTO RS SILIC O N NPN 6 0 .8 0 VO LTS Transistors 1 5 0 WATTS


    Original     		PDF 2N3716 com/2n3716 2N3716

    amplifier 446 mhz

    Abstract: NFP2033
    Text: TECHNICAL DATA 1 AMPERE NPN NFP2033 SURFACE MOUNT 3 Pin Flat Pack HIGH VOLTAGE NPN TRANSISTOR SURFACE MOUNT AMPLIFIER MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1 Base Current - Continuous


    Original     		PDF NFP2033 amplifier 446 mhz NFP2033

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Power Transistors TECHNICAL DATA 1 AMPERE NPN NFP2033 SURFACE MOUNT 3 Pin Flat Pack HIGH VOLTAGE NPN TRANSISTOR SURFACE MOUNT AMPLIFIER MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1


    Original     		PDF NFP2033 NFP2033

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3439 (SILICON) NPN SILICON HIGIi VOLTAGE POWER TRANSISTORS 1 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in consumer and industrial line-operated


    Original     		PDF 2N3439

    Bc140

    Abstract: bc141 BC-141
    Text: BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO


    OCR Scan     		PDF BC140 BC141 BC140, BC141 BCl60, 100mA 100ibA Bc140 BC-141

    2N3422

    Abstract: 2N3442 2n4347 2N4327 C0440
    Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in


    OCR Scan     		PDF b3b72SM 2N3442 2N4347 2N4347 2N3442 2N3422 2N4327 C0440

    pnp for 2n3019

    Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
    Text: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		PDF 2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 150mA VCE-10V 500mA pnp for 2n3019 2N4033 2N5020 transistor 2N4033 2N4031 BOX69477

    pnp for 2n3019

    Abstract: No abstract text available
    Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		PDF 2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 200OC 150mA VCE-10V pnp for 2n3019

    2N4033

    Abstract: No abstract text available
    Text: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.


    OCR Scan     		PDF 2N3019 2N3019, 2NJ020 2N4033» 2N4031. 2N3020 800mW 200OC 150mA VCE-10V 2N4033

    br200a

    Abstract: No abstract text available
    Text: 13368602 S O L IT R O N nFVTHFR 66C TMn 01932 D T~ ,/ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS t.b DE I ñ3kñt.0a DQDIIBS 1 | - BR200A BR200B* BR201A BR201B* NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 20 AMPERES FEATURES HIGH POWER RADIATION EXPOSURE LEVEL TO 3 x 1 0 l 4 n/Cm2


    OCR Scan     		PDF BR201B* BR200A BR200B* BR201A T0-61/I BR200A BR201A BR200A,

    Untitled

    Abstract: No abstract text available
    Text: 7 AMPERE MEDIUM-POWER NPN SILICON POWER TRANSISTORS POWER TRANSISTORS NPN SILICON 80- 100 VOLTS 40 WATTS .designed for switching and wide-band amplifier applications. • • • Low Collector-Emitter Saturation Voltage VCE SAT = 1-2 Vnc (Max) @ Ic = 7.0 Adc


    OCR Scan     		PDF 2N5428

    THT bsc 25

    Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
    Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS


    OCR Scan     		PDF BUT15 THT bsc 25 but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode

    BC301

    Abstract: bc500 BC302 BC300 BC303 BC304 VCB-60V BC301-BC302 BC300-BC301-BC302
    Text: BC300 BC302 BC301 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO


    OCR Scan     		PDF BC300 BC301 BC302 BC300, BC301, BC303 BC304. BC500 BC304 VCB-60V BC301-BC302 BC300-BC301-BC302

    transistor mj10005

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ10005/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode ‘ Motorola Preferred Device 20 AMPERE NPN SILICON


    OCR Scan     		PDF MJ10005/D MJ10005 O-204AA transistor mj10005

    2SC2373

    Abstract: m0spec
    Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A


    OCR Scan     		PDF 2SC2373 m0spec

    BC301

    Abstract: bc500 BC300
    Text: BC300 BC301 BC302 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES i CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ABE COMPLEMENTARY TO


    OCR Scan     		PDF BC300 BC301 BC302 BC300, BC301, BC302 BC303 BC304. BC30Q BC301 bc500 BC300

    Motorola AN222A

    Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
    Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR


    OCR Scan     		PDF MJ10023/D MJ10023 Motorola AN222A application MJ10023 U430B motorola 222A motorola SPS bipolar

    transistor zo 607

    Abstract: MSI IC AN415A U440 transistor zo 607 motorola transistor 151 transistor case To 106 BUX42 75S4 U440
    Text: MOTOROLA SC Í X S T R S / R 6367254 F> MOTOROLA DE | b 3 b 7 5 5 4 SC XSTRS/R □ □Û D A7 1 96D 8 0 8 7 1 F D D r- 3 3-/3 MOTOROLA SEMICONDUCTOR BUX42 TECHNICAL DATA 12 AMPERES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR


    OCR Scan     		PDF AN415A) transistor zo 607 MSI IC AN415A U440 transistor zo 607 motorola transistor 151 transistor case To 106 BUX42 75S4 U440

    BC141A

    Abstract: BC140 BC141 BC161
    Text: BC140 BC141 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES ' -Ç:;ï V 'lF '' I CASE TO-59 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BCI40, BC141 -ARE COMPLEMENTARY TO


    OCR Scan     		PDF BC140 BC141 BC140, BC141-ABE BCl60, BC161 650mW BC141A

    MJE370

    Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
    Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers


    OCR Scan     		PDF MJE3370 MJE370 MJE3371 MJE371 MJE3439, MJE3440 MJE3439 MJE3440 JE3440 MJE3370 MJE3371 MJE-3439

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 8 5 0 -1 0 0 0 V (B V C E S )


    OCR Scan     		PDF BUS98/D BUS98 BUS98A

    2N3107

    Abstract: 2N3108 2N3109 2N3110 2N4030 2N4032 2n31
    Text: f 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP


    OCR Scan     		PDF 2N3107 2N3110 2N3110 2N4032, 2N4030. 2F3109 800mV CONDITI3108, 2N3108 2N3109 2N4030 2N4032 2n31

    2N5530

    Abstract: LC117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors 2N5529 Solitron Devices Solitron Transistor 2N5533
    Text: 83£flßI^- S O L I T R O N DEVICES INC _ _ _ _ 6 6 C 01912 D T"1 3 3 - /f _ I^ SätD aD D D M ia t I ßflQ ifljH jfl KtSlSlAN T NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES


    OCR Scan     		PDF 2N5529 2N5530 2N5533 2N5534 5x1014 2N5530* 2N5534* lc117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors Solitron Devices Solitron Transistor

    transistor u8 2w

    Abstract: transistor npn U8 2N5535 SOLITRON solitron transistors 2N5536 2N5537 2N5538 2n5533 bbc cs 1
    Text: _ 8 3 6 8 6 0 2 SOL I T R O N DEVICES. INC_,_- ^6C 0 1 9 1 8 7~~33"/J_ D RADIAllUN HtsiSïÂNT NPN SILICON POWER TRANSISTORS -• bb DE|ß3böbD2 DDDnifl 7 | 2N5535 2N5536 2N5537 2N5538 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T


    OCR Scan     		PDF 2N5535 2N5536 2N5537 2N5538 5x1014 2N5536* 2N5538* transistor u8 2w transistor npn U8 SOLITRON solitron transistors 2N5538 2n5533 bbc cs 1