NPN 1 AMPER Search Results

2n3716

Contextual Info: 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 V. 1 of 1 Home Part Number: 2N3716 Online Store 2N3716 Diodes 1 0 AM PERE PO WER TRANSISTO RS SILIC O N NPN 6 0 .8 0 VO LTS Transistors 1 5 0 WATTS

amplifier 446 mhz

Abstract: NFP2033
Contextual Info: TECHNICAL DATA 1 AMPERE NPN NFP2033 SURFACE MOUNT 3 Pin Flat Pack HIGH VOLTAGE NPN TRANSISTOR SURFACE MOUNT AMPLIFIER MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1 Base Current - Continuous

Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA 1 AMPERE NPN NFP2033 SURFACE MOUNT 3 Pin Flat Pack HIGH VOLTAGE NPN TRANSISTOR SURFACE MOUNT AMPLIFIER MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1

Bc140

Abstract: bc141 BC-141
Contextual Info: BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO

2N3422

Abstract: 2N3442 2n4347 2N4327 C0440
Contextual Info: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in

pnp for 2n3019

Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
Contextual Info: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.

pnp for 2n3019

Contextual Info: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.

2N4033

Contextual Info: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.

br200a

Contextual Info: 13368602 S O L IT R O N nFVTHFR 66C TMn 01932 D T~ ,/ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS t.b DE I ñ3kñt.0a DQDIIBS 1 | - BR200A BR200B* BR201A BR201B* NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 20 AMPERES FEATURES HIGH POWER RADIATION EXPOSURE LEVEL TO 3 x 1 0 l 4 n/Cm2

Contextual Info: 7 AMPERE MEDIUM-POWER NPN SILICON POWER TRANSISTORS POWER TRANSISTORS NPN SILICON 80- 100 VOLTS 40 WATTS .designed for switching and wide-band amplifier applications. • • • Low Collector-Emitter Saturation Voltage VCE SAT = 1-2 Vnc (Max) @ Ic = 7.0 Adc

THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3439 (SILICON) NPN SILICON HIGIi VOLTAGE POWER TRANSISTORS 1 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in consumer and industrial line-operated

BC301

Abstract: bc500 BC302 BC300 BC303 BC304 VCB-60V BC301-BC302 BC300-BC301-BC302
Contextual Info: BC300 BC302 BC301 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO

transistor mj10005

Contextual Info: MOTOROLA Order this document by MJ10005/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode ‘ Motorola Preferred Device 20 AMPERE NPN SILICON

2SC2373

Abstract: m0spec
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A

BC301

Abstract: bc500 BC300
Contextual Info: BC300 BC301 BC302 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES i CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ABE COMPLEMENTARY TO

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

transistor zo 607

Abstract: MSI IC AN415A U440 transistor zo 607 motorola transistor 151 transistor case To 106 BUX42 75S4 U440
Contextual Info: MOTOROLA SC Í X S T R S / R 6367254 F> MOTOROLA DE | b 3 b 7 5 5 4 SC XSTRS/R □ □Û D A7 1 96D 8 0 8 7 1 F D D r- 3 3-/3 MOTOROLA SEMICONDUCTOR BUX42 TECHNICAL DATA 12 AMPERES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR

BC141A

Abstract: BC140 BC141 BC161
Contextual Info: BC140 BC141 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES ' -Ç:;ï V 'lF '' I CASE TO-59 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BCI40, BC141 -ARE COMPLEMENTARY TO

MJE370

Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Contextual Info: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers

Contextual Info: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 8 5 0 -1 0 0 0 V (B V C E S )

2N3107

Abstract: 2N3108 2N3109 2N3110 2N4030 2N4032 2n31
Contextual Info: f 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP

2N5530

Abstract: LC117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors 2N5529 Solitron Devices Solitron Transistor 2N5533
Contextual Info: 83£flßI^- S O L I T R O N DEVICES INC _ _ _ _ 6 6 C 01912 D T"1 3 3 - /f _ I^ SätD aD D D M ia t I ßflQ ifljH jfl KtSlSlAN T NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES

transistor u8 2w

Abstract: transistor npn U8 2N5535 SOLITRON solitron transistors 2N5536 2N5537 2N5538 2n5533 bbc cs 1
Contextual Info: _ 8 3 6 8 6 0 2 SOL I T R O N DEVICES. INC_,_- ^6C 0 1 9 1 8 7~~33"/J_ D RADIAllUN HtsiSïÂNT NPN SILICON POWER TRANSISTORS -• bb DE|ß3böbD2 DDDnifl 7 | 2N5535 2N5536 2N5537 2N5538 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T