Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current
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FMMT494
100mA
100ms
250mA,
500mA,
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nte328
Abstract: 25A12
Text: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage
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NTE328
NTE328
25A12
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FMMT494
Abstract: DSA003696
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current
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FMMT494
100mA
50age
100ms
250mA,
FMMT494
DSA003696
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PDF
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BDX67
Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier
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BDX66/A/B/C
BDX67
BDX67C
BDX67A
BDX67B
BDX67
npn 120v 10a transistor
transistor bdx67
BDX66
NPN Transistor VCEO 80V 100V
NPN Transistor VCEO 80V 100V DARLINGTON
BDX67C
BDX67B
darlington power transistor 10a
transistor bdx66
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200W TRANSISTOR AUDIO AMPLIFIER
Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ms,
BDX69"
200W TRANSISTOR AUDIO AMPLIFIER
TRANSISTOR BDX
NPN Transistor VCEO 80V 100V DARLINGTON
200w AUDIO AMPLIFIER
200w audio amplifier ic
200w audio power amplifier
transistor BDX 65
200W POWER TRANSISTORS
BDX 20a
200w power amplifier
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Untitled
Abstract: No abstract text available
Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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2N6578
O-204AA)
100mA
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tf600
Abstract: IC4a ZTX1051A DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1051A
100ms
NY11725
tf600
IC4a
ZTX1051A
DSA003762
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PDF
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120v 10a transistor
Abstract: transistor darlington package to.3 npn 120v 10a transistor 2N6578
Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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2N6578
O-204AA)
100mA
120v 10a transistor
transistor darlington package to.3
npn 120v 10a transistor
2N6578
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ZTX1053A
Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1053A
100ms
NY11725
ZTX1053A
BF 245 A spice
ztx1053a datasheet
NC176
BF600
bf 245 spice
1053A
ZTX1053
zetex transistor to92
21E12
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PDF
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t1053
Abstract: ZDT1053 ic 245
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 - NOVEMBER 1995 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS.
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ZDT1053
OT223)
T1053
100mA
t1053
ZDT1053
ic 245
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NTE2344
Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
Text: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE2343
NTE2344
100mA,
NTE2344
nte2343
SILICON COMPLEMENTARY transistors darlington
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2N6576
Abstract: 2N6578 2N6577 darlington npn 90v
Text: SavantIC Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators
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2N6576
2N6577
2N6578
2N6576
2N6577
2N6578
darlington npn 90v
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2N6576
Abstract: 2N6578 darlington npn 90v 2N6577
Text: JMnic Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators PINNING
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2N6576
2N6577
2N6578
2N6576
2N6577
2N6578
darlington npn 90v
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t1053
Abstract: ZDT1053 DSA003723
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 2 - APRIL 2000 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT1053
OT223)
T1053
100mA
t1053
ZDT1053
DSA003723
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JANS2N2484
Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930
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JANS2N930
JANS2N930UB
JANS2N2218
JANS2N2218A
JANS2N2218AL
JANS2N2219
JANS2N2219A
JANS2N2219AL
JANS2N2221A
JANS2N2221AL
JANS2N2484
JANS2N3439UA
JANS2N3637
transistors SMD npn
JANS2N5339U3
JANS2N7373
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120v 10a transistor
Abstract: No abstract text available
Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 FEATURES 1.52 (0.06) 3.43 (0.135) 2 • • 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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BDY90
O-204AA)
120v 10a transistor
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Untitled
Abstract: No abstract text available
Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 • • 22.23 (0.875) max. 1 FEATURES 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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BDY90
O-204AA)
10MHz
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Complementary Darlington Audio Power Amplifier
Abstract: audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v
Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT−82 type package designed for use in audio output stages and general amplifier and switching
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NTE2345
NTE2346
OT-82
Complementary Darlington Audio Power Amplifier
audio Darlington 6A
complementary npn-pnp power transistors
darlington transistor for audio power application
NTE2345
NTE2346
darlington complementary 120v
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PDF
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audio Darlington 6A
Abstract: No abstract text available
Text: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching
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NTE2345
NTE2346
audio Darlington 6A
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PDF
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120v 10a transistor
Abstract: o25m 2N5291 npn 120v 10a transistor
Text: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon
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D002S0b
203mm)
25MHz
25MHz
350pF
120v 10a transistor
o25m
2N5291
npn 120v 10a transistor
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PDF
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2N3597
Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
2N3597
2N3599
2N5539
BDY58
SDT8301
SDT8304
SDT8758
74c74
TRANSISTOR TO63
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PDF
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2N6127
Abstract: Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129
Text: ^/outran ra y <gT ©Ä¥ÄIL®( Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 63) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)
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OCR Scan
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4i45mm
203mm)
2N6127
Vceo 80V Ic 0.5A
2N5312
2N5318
2N5677
2N5742
2N5744
SDT3101
SDT3129
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PDF
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sdt31
Abstract: No abstract text available
Text: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT| û3kat,DE GDGEÛÛS 1 T- 3 „J<tren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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OCR Scan
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203mm)
350pF
350pF
2N5312,
2N5318,
2N5677,
2N5744,
2N5742,
2N6127,
SDT3101
sdt31
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PDF
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Untitled
Abstract: No abstract text available
Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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OCR Scan
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203mm)
20MHz
20MHz
500pF
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PDF
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