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    NPN 200W Search Results

    NPN 200W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    B0853-ALB Coilcraft Inc SMPS Transformer, 200W, ROHS COMPLIANT Visit Coilcraft Inc Buy

    NPN 200W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking Code 2X

    Abstract: 2N4401 MMBT4401 MMBT4403
    Text: ADVANCED INFORMATION ADVANCED INFORMATION MMBT4401 SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ As complementary type, the PNP


    Original     		PDF MMBT4401 OT-23 MMBT4403 2N4401. OT-23 Marking Code 2X 2N4401 MMBT4401

    200w transistor amplifier circuit

    Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
    Text: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is


    Original     		PDF MPS2222A OT-23 MMBT2222A 200w transistor amplifier circuit MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a

    TO63 package

    Abstract: NTE71
    Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.


    Original     		PDF NTE71 NTE71 TO63 package

    transistor 2n4401 equivalent

    Abstract: transistor D55 200w transistor amplifier circuit 2N4401 NPN Switching Transistor npn 200w 2n4401 equivalent transistor 2N4401 transistor 2n4403 2N4401 transistor pin configuration transistor 2n4401
    Text: ADVANCED INFORMATION ADVANCED INFORMATION 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP


    Original     		PDF 2N4401 2N4403 OT-23 MMBT4401 150mA transistor 2n4401 equivalent transistor D55 200w transistor amplifier circuit 2N4401 NPN Switching Transistor npn 200w 2n4401 equivalent transistor 2N4401 transistor 2n4403 2N4401 transistor pin configuration transistor 2n4401

    nte328

    Abstract: 25A12
    Text: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage


    Original     		PDF NTE328 NTE328 25A12

    marking code 1p

    Abstract: MMBT2222A MPS2222A 10D4
    Text: ADVANCED INFORMATION ADVANCED INFORMATION MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the


    Original     		PDF MMBT2222A OT-23 MPS2222A. OT-23 marking code 1p MMBT2222A MPS2222A 10D4

    NTE327

    Abstract: transistor NTE327
    Text: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain


    Original     		PDF NTE327 NTE327 transistor NTE327

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio


    Original     		PDF BDX69 BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ns,

    nte181

    Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
    Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per


    Original     		PDF NTE180 NTE181 750mA NTE181MP NTE181 NTE180MCP NEC 08F NTE180 NTE181 power transistor 200w audio power amplifier

    NTE87

    Abstract: NTE88 NTE88MCP NTE88M
    Text: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These


    Original     		PDF NTE87 NTE88 NTE87 NTE88 NTE88MCP NTE88M

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    "Darlington Transistors"

    Abstract: BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, "Darlington Transistors" BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65

    Untitled

    Abstract: No abstract text available
    Text: BDX69A BDX69A BDX69B BDX69C S EM E LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms,

    BU808DFH

    Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
    Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416


    Original     		PDF STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH

    TH430

    Abstract: M177 JESD97 SD1728 TH430 marking
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 M177 JESD97 TH430 marking

    NPN 250W

    Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
    Text: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W


    Original     		PDF BUL47" BUL47A BUL47B 20MHz BUL50" BUL50A BUL50A-T247 BUL50B 10MHz NPN 250W NPN 400V 40A BUR13 BUL58

    Untitled

    Abstract: No abstract text available
    Text: S P RAG UE /S EN IC ON D GROUP 03 D • flS13flS0 0004556 3 ■ ELECTRICAL CHARACTERISTICS at T a = +25°C Iebo IcBO Polarity V BB CBO (V) THC5088 THC5089 THC5305 THC5306 NPN NPN NPN NPN 100 100 300 300 35 30 25 25 30 25 25 25 4.5 4.5 12 12 50 50 100 100 20


    OCR Scan     		PDF flS13flS0 THC5088 THC5089 THC5305 THC5306 THC5307 THC5400 2N5088 2N5089 2N5305

    2SD797

    Abstract: 2s0797
    Text: 2SD797 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • High Power Dissipation PC=200W Tc=25°C ' High Collector Current


    OCR Scan     		PDF 2SD797 6CK120, 10CK200 2S0797 2SD797 2s0797

    2sc2652

    Abstract: 2-13B1A 200WPEP
    Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency


    OCR Scan     		PDF 2SC2652 30MHz 28MHz 200WpEP --30dB 2-13B1A 100mA, 1S1555 961001EAA2' 2sc2652

    2sc2652

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)


    OCR Scan     		PDF 2SC2652 28MHz 200WpEP 961001EAA2' 2sc2652

    2-21F1A

    Abstract: 2SD1313
    Text: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. • High Power Dissipation : Pç; = 200W Te = 25°C • High Collector Current : Iç; = 25A (DC)


    OCR Scan     		PDF 2SD1313 --55ransportation 2-21F1A 2SD1313

    2SD1313

    Abstract: 2-21F1A
    Text: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS • High Power Dissipation : Pç; = 200W Te = 25°C • High • High • Low Saturation Voltage :


    OCR Scan     		PDF 2SD1313 --55ransportation 2SD1313 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available


    OCR Scan     		PDF 2N5886

    t03 package transistor pin dimensions

    Abstract: 8830 transistor
    Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available


    OCR Scan     		PDF 2N5886 t03 package transistor pin dimensions 8830 transistor