NPN 2904 Search Results

NPN 2904 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
2904/BQA	Rochester Electronics LLC	AM2904 - Status and Shift Control Unit
2904DM	Rochester Electronics LLC	AM2904 - Status and Shift Control Unit

NPN 2904 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DTC614TU Abstract: No abstract text available Text: SPICE PARAMETER DTC614TU by ROHM TR Div. * DTC614TU DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC614TU 1 2 3 R1 2 Base Rb 10k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC614TU DTC614TU 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12	PDF
DTC643TK Abstract: No abstract text available Text: SPICE PARAMETER DTC643TK by ROHM TR Div. * DTC643TK DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC643TK 1 2 3 R1 2 Base Rb 4.7k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC643TK DTC643TK 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12	PDF
2.2K resistor datasheet Abstract: DTC623TK Text: SPICE PARAMETER DTC623TK by ROHM TR Div. * DTC623TK DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC623TK 1 2 3 R1 2 Base Rb 2.2k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC623TK DTC623TK 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12 2.2K resistor datasheet	PDF
DTC614TK Abstract: No abstract text available Text: SPICE PARAMETER DTC614TK by ROHM TR Div. * DTC614TK DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC614TK 1 2 3 R1 2 Base Rb 10k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC614TK DTC614TK 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12	PDF
DTC643TU Abstract: No abstract text available Text: SPICE PARAMETER DTC643TU by ROHM TR Div. * DTC643TU DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC643TU 1 2 3 R1 2 Base Rb 4.7k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC643TU DTC643TU 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12	PDF
2.2K resistor datasheet Abstract: 40092 transistor bjt datasheet DTC623TU Text: SPICE PARAMETER DTC623TU by ROHM TR Div. * DTC623TU DIGITAL NPN BJT model * Date: 2007/01/16 * BJT with a resistor *C B E .SUBCKT DTC623TU 1 2 3 R1 2 Base Rb 2.2k Q1 1 Base 3 QDTC6 .MODEL Rb RES + R=1 .MODEL QDTC6 NPN + IS=1.5000E-12 + BF=1.3841E3	Original	DTC623TU DTC623TU 5000E-12 3841E3 0475E-12 731E-12 584E-12 93E-12 2.2K resistor datasheet 40092 transistor bjt datasheet	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for High-density Mounting z Allowing Supply with the Radial Taping z Complementary to 2SA1309A 2. COLLECTOR	Original	O-92S 2SC3311A 2SA1309A 100mA 200MHz	PDF
ZR 720 Abstract: D 400 transistor 2SB1218A 2SD1819A Text: 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES z z A High foward current transfer ratio hFE. L Low collector to emitter saturation voltage VCE sat . 3 z Complementary to 2SB1218A B S Top View	Original	2SD1819A OT-323 2SB1218A 01-Jun-2007 100mA, 200MHz ZR 720 D 400 transistor 2SB1218A 2SD1819A	PDF
2SD1991A Abstract: No abstract text available Text: 2SD1991A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2SD1991A 100mA 200MHz	PDF
2n3019 equivalent Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31 Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE	OCR Scan	2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31	PDF
BC140 equivalent Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18	OCR Scan	BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent	PDF
2N2270 equivalent Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102 Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B	OCR Scan	2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76	PDF
2N697 equivalent Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10	OCR Scan	BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent	PDF
TRANSISTOR BC 313 Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP	OCR Scan	BSX52 BSW21 BSW22 BSX51 BSW22 290AL-CASE/BOITIER TRANSISTOR BC 313 npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor	PDF

bc 301 transistor Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56 Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP	OCR Scan	BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56	PDF
bc 107 transistor Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16 Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP	OCR Scan	BSX52 BSW21 BSW22 BSX51 BSW22 BSX52 bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16	PDF
NPN 2sC1685 Abstract: 2SC1685 R 2SC1685 2SC1684 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q Text: 2SC1684, 2SC1685 2SC1684, 2SC1685 '> ij 3 > NPN x fcf£ + '> 7, ;U7?U'— NPN Epitaxial Planar —JK ^iiSffl/G en eral Amplifier • # ^ /F e a tu re s • fii^ rL iiiP S ^ hFE ^ ¡f t v ^ / H i g h hFE • 3> ? ^ i ?mwm± V - 7 / Low V CE sat cE (sat)	OCR Scan	2SCI684, 2SCI685 2SC1684, 2SC1685 2SC1684 SC-43 NPN 2sC1685 2SC1685 R 2SC1685 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q	PDF
BD320C Abstract: 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 Text: NPN SWITCHING TABLE 3 - NPN SILICO N PLANAR M E D IU M A N D HIGH SPEED SW IT C H IN G T R A N S IS T O R S T h e d e v ice s s h o w n in this table are characterised for m edium and high speed sw itc h in g applications in C om m ercial, Industrial and M ilitary equipm ents.	OCR Scan	2N3262 T0-39 T0-18 BD320C BD321A BD321B BD321C BD321A-18 BD321B-18 BD321C-18 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89	PDF
2N3904 Abstract: 2N3904 MOTOROLA 2n3903 2N3904 Equivalent equivalent al 2n3904 motorola 2N3904 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘ Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage	OCR Scan	2N3903 2N3904* O-226AA) 2N3903 2N3904 b3b7255 2N3904 2N3904 MOTOROLA 2N3904 Equivalent equivalent al 2n3904 motorola 2N3904	PDF
MPS911 Abstract: zt145 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistors MM BR911LT1 MPS911 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as	OCR Scan	O-226AA A/500 BR911LT1 MPS911 MMBR911LT1 MPS911 zt145	PDF
MPS6507 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistor MPS6507 NPN Silicon MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Ve b o 3.0 Vdc Collector Current — Continuous	OCR Scan	MPS6507 O-226AA) MPS6507	PDF
mps901 Abstract: mrf901 MPS90 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. • High Current-Gain — Bandwidth Product — fy = 4.5 GHz Typ @ lc = 15 mAdc •	OCR Scan	MRF901 O-226AA MPS901 mrf901 MPS90	PDF
PS751 Abstract: No abstract text available Text: NPN MAXIMUM RATINGS MPS650, MPS651* Symbol MPS650 MPS750 MPS651 MPS751 Unit Collector-Emitter Voltage VCE 40 60 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current — Continuous •c 2.0 Ade Total Power Dissipation	OCR Scan	MPS650 MPS750 MPS651 MPS751 MPS650, MPS651* PNP13) MPS750, MPS751* O-226AA) PS751	PDF
lt 6652 Abstract: MPS6652 S6602 Text: MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage MPS6601/6651 M PS6602/6652 VCEO Collector-Base Voltage MPS6601/6651 MPS6602/6652 VCBO Emitter-Base Voltage Value Unit Vdc 25 40 Vdc NPN MPS6601 MPS6602* 25 30 v EBO 4.0 Vdc Collector Current — Continuous	OCR Scan	MPS6601/6651 PS6602/6652 MPS6602/6652 MPS6601 MPS6602* MPS6651 MPS6652* O-226AA) lt 6652 MPS6652 S6602	PDF

NPN 2904 Search Results

NPN 2904 Result Highlights (5)

NPN 2904 Datasheets Context Search

DTC614TU

DTC643TK

2.2K resistor datasheet

DTC614TK

DTC643TU

2.2K resistor datasheet

Untitled

ZR 720

2SD1991A

2n3019 equivalent

BC140 equivalent

2N2270 equivalent

2N697 equivalent

TRANSISTOR BC 313

bc 301 transistor

bc 107 transistor

NPN 2sC1685

BD320C

2N3904

MPS911

MPS6507

mps901

PS751

lt 6652