2SD814
Abstract: 2SD814A
Text: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current
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2SD814,
2SD814A
2SD814
2SD814
2SD814A
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Untitled
Abstract: No abstract text available
Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage
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KSE180/181/182
KSE180
KSE181
KSE182
O-126
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MJE180
Abstract: MJE181 MJE182
Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : MJE180 : MJE181 : MJE182 Collector-Emitter Voltage
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MJE180/181/182
O-126
MJE180
MJE181
MJE182
MJE180
MJE181
MJE182
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CSD73
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR TO - 220 Plastic Package Low Frequency High Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector - Base Voltage Collector- Emitter Voltage
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ISO/TS16949
CSD73
C-120
CSD73070801
CSD73
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2SD1788
Abstract: ITO-220
Text: SavantIC Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol
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2SD1788
ITO-220
ITO-220)
2SD1788
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TIP112
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. TIP112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter
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TIP112
O-220AB
TIP112
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2N3055HV
Abstract: transistor 2N3055hv
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter
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2N3055HV
C-120
2N3055HVRev110302D
2N3055HV
transistor 2N3055hv
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2N3773 NPN Transistor
Abstract: 2N3773 equivalent 2N3773
Text: DC COMPONENTS CO., LTD. 2N3773 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high power audio, disk head positioners, and other linear applications . TO-3 Pinning 1 = Base 2 = Emitter Case = Collector
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2N3773
50KHz
2N3773 NPN Transistor
2N3773 equivalent
2N3773
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BD677A FAIRCHILD SEMICONDUCTOR
Abstract: 679A bd681
Text: BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base
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BD675A/677A/679A/681
BD676A,
BD678A,
BD680A
BD682
BD675A
BD677A
BD679A
BD681
BD677A FAIRCHILD SEMICONDUCTOR
679A
bd681
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NZT902
Abstract: sot223 transistor fairchild NPN 3A
Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted
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NZT902
OT-223
NZT902
sot223 transistor fairchild NPN 3A
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Untitled
Abstract: No abstract text available
Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted
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NZT902
OT-223
NZT902
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NPN 1A 100V SOT-223
Abstract: No abstract text available
Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted
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NZT902
NZT902
OT-223
NPN 1A 100V SOT-223
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2SD1788
Abstract: ITO-220
Text: Product Specification www.jmnic.com 2SD1788 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol Absolute maximum ratings(Ta=25℃)
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2SD1788
ITO-220
ITO-220)
2SD1788
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bd243
Abstract: No abstract text available
Text: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD243/A/B/C
BD244,
BD244A,
BD244B
BD244C
O-220
BD243
BD243A
BD243B
bd243
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transistor cross reference
Abstract: BD243 BD243 transistor
Text: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD243/A/B/C
BD244,
BD244A,
BD244B
BD244C
O-220
BD243
BD243A
BD243B
transistor cross reference
BD243
BD243 transistor
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bd237
Abstract: BD233
Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units
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BD233/235/237
O-126
BD233
BD235
BD237
bd237
BD233
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BD241
Abstract: No abstract text available
Text: BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively 1 TO-220 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER
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BD241/A/B/C
BD242/A/B/C
O-220
BD241
BD241A
BD241B
BD241C
BD241
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transistor 2n5330
Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)
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203mm)
40MHz
40MHz
300pF
transistor 2n5330
transistor c63
NPN Transistor VCEO 80V 100V
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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Untitled
Abstract: No abstract text available
Text: 2N3055SPL MJ2955SPL 2N3055SPL MJ2955SPL NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIM UM RATINGS Collector-base voltage open emitter
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2N3055SPL
MJ2955SPL
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Untitled
Abstract: No abstract text available
Text: -Jfclitron MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER Devices, me NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 55 CONTACT METALLIZATION Base and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also availab le)
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203mm)
SDT55407,
SDT55503.
SDT55905
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74c74
Abstract: No abstract text available
Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)
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305mm)
74c74
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NPN Transistor 50A 400V
Abstract: 1200PF
Text: C o n tr a n Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available Also available on:
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470mm
938mm
938mm)
508mm)
700mm)
524mm)
203mm)
10MHz
NPN Transistor 50A 400V
1200PF
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2N3442
Abstract: 2n4348
Text: PK ®! ? ©ATAH© ^olitron Devices. Inc. MEDIUM VOLTAGE CHIP NUM BER _ NPN SINGLE DIFFUSED MESA TRANSISTOR CONTACT METALLIZATION Base, Emitter and Collector Solder Coaled 95/5% lead /tin. ASSEMBLY RECOMMENDATIONS It is advisable that: a the chip be assembled in a reducing gas atmosphere.
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2N3442,
2N3442.
2N4348
2N3442
2n4348
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